Abstract: An electrophotographic roller comprising a substrate and a foam layer on an outer peripheral surface of the substrate, the foam layer constituting an outer surface of the electrophotographic roller, the foam layer comprising cells each of which opens on the outer surface, and the foam layer having a zero-point charge measured using a standard carrier of 40 ?C/g or more.

Abstract: The problem of providing a technology that converts a Brassica rapa plant having self-incompatibility to having self-compatibility is addressed. The problem is solved by causing a pollen factor (SP11) to be inactive at a self-incompatibility gene locus for a Brassica rapa plant, while maintaining the inverted repeat sequence (SMI) on a class I dominant S haplotype.

Abstract: The problem of providing a technology that converts a Brassica rapa plant having self-incompatibility to having self-compatibility is addressed. The problem is solved by causing a pollen factor (SP11) to be inactive at a self-incompatibility gene locus for a Brassica rapa plant, while maintaining the inverted repeat sequence (SMI) on a class I dominant S haplotype.

Abstract: A silicon wafer contains: a silicon substrate; a first epitaxial layer on the silicon wafer, wherein the absolute value of the difference between donor and acceptor concentrations is ?1×1018 atoms/cm3; a second epitaxial layer above the first epitaxial layer, whose conductivity type is the same as the first epitaxial layer, wherein the absolute value of the difference between donor and acceptor concentrations is ?5×1017 atoms/cm3; wherein, by doping a lattice constant adjusting material into the first epitaxial layer, the variation amount ((a1-aSi)/aSi) of the lattice constant of the first epitaxial layer (a1) relative to the lattice constant of the silicon single crystal (aSi) as well as the variation amount ((a2-aSi)/aSi) of the lattice constant of the second epitaxial layer (a2) relative to the lattice constant of the silicon single crystal (aSi) are controlled to less than the critical lattice mismatch.

Abstract: A method is for commercially producing by the SIMOX technique a perfect partial SOI structure avoiding exposure of a buried oxide film through the surface thereof and forming no step between an SOI region and a non-SOI region. A method for the production of an SOI substrate, includes forming on the surface of a semiconductor substrate made of a silicon single crystal a protective film designated to serve as a mask for ion implantation, forming an opening part of a stated pattern in the protective film, implanting oxygen ions into the surface of the semiconductor substrate in a direction not perpendicular thereto, and heat treating the semiconductor substrate thereby forming a buried oxide film in the semiconductor substrate, and inducing at the step of implanting oxygen ions into the surface of the semiconductor substrate the impartation of at least two angles to be formed between the projection of the flux of implantation of oxygen ions and a specific azimuth of the main body of the substrate.

Abstract: A Separation by Implanted Oxygen (“SIMOX”) substrate and method for making thereof are provided. The SIMOX substrate can be produced by employing an oxygen ion implantation amount in a low dose range. The substrate is a high quality SOI substrate having an increased thickness of a BOX layer. More specifically, the SIMOX substrate and method for making the same are provided such that a buried oxide layer and a surface silicon layer are formed by applying the implantation of oxygen ions in a silicon substrate and a high temperature heat treatment thereafter. A buried oxide layer is provided by applying a high temperature heat treatment after an oxygen ion implantation; then applying an additional oxygen ion implantation so that the peak position of the distribution of implanted oxygen is located at a portion lower than the interface between the buried oxide layer, already formed, and the substrate thereunder. Then, another high temperature heat treatment is applied.

Abstract: A method is for commercially producing by the SIMOX technique a perfect partial SOI structure avoiding exposure of a buried oxide film through the surface thereof and forming no step between an SOI region and a non-SOI region.

Abstract: The present invention provides a SIMOX substrate produced by employing an oxygen ion implantation amount in a low dose range, which substrate is a high quality SOI substrate having an increased thickness of a BOX layer, and a method of producing the same, and more specifically, provides a method of producing a SIMOX substrate wherein a buried oxide layer and a surface silicon layer are formed by applying the implantation of oxygen ions in a silicon substrate and a high temperature heat treatment thereafter, characterized by: forming the buried oxide layer through applying a high temperature heat treatment after an oxygen ion implantation; then applying an additional oxygen ion implantation so that the peak position of the distribution of implanted oxygen is located at a portion lower than the interface between the buried oxide layer, already formed, and the substrate thereunder; and then applying another high temperature heat treatment, and a SIMOX substrate produced by said method having a surface silicon la

Abstract: A wafer temperature detection device for an ion implanter including a dummy and a temperature detector. The dummy is disposed on a rotating disk where wafers are disposed to have ions implanted in the ion implanter and is made of a substantially identical material as that of the wafers. The temperature detector is provided on the dummy.

Abstract: An oxidizing agent is added to water polluted with organic compounds, especially organic chlorine compounds, disinfection is carried out, and suspended solids in the water are removed. Thereafter, ultraviolet rays are irradiated to oxidize and decompose the organic compounds, and furthermore, volatile organic compounds are separated and removed from the water. Finally, the oxidizing agents residual in the water are reduced. The oxidizing agent is separately added at two phases of disinfection and oxidization decomposition, thereby causing the decomposing efficiency of organic compounds to be much improved.

Abstract: Novel allosamidin compounds, AJI9463A, AJI9463B and AJI9463C, represented by the following structural formula (1): ##STR1## wherein R.sub.1 and R.sub.2 are hydrogen and R.sub.3 is hydroxy (AJI9463A); R.sub.1 and R.sub.3 are hydrogen and R.sub.2 is hydroxy (AJI9463B); and R.sub.1 is methyl, R.sub.2 is hydroxy and R.sub.3 is hydrogen (AJI9463C), exhibit extremely potent inhibitory activity against chitinases from a number of sources, particularly from Candida albicans, and can be utilized as potent antifungal agents and chitinase inhibitors. Pseudo disaccharide compounds, obtained by partial hydrolysis of these compounds with an acid, also show potent inhibitory activity against chitinase, and can be utilized as antifungal agents and chitinase inhibitors.

Abstract: Raw water such as polluted ground water can be recovered to clean water through the following processes. Firstly, oxidizing agent is added to raw water to disinfect bacteria, and then after suspended solid is removed from the water, ultraviolet rays are irradiated on the water so that organic chlorine compounds can be decomposed by active oxygen generated by the irradiation of ultraviolet rays. Finally, the residual oxidizing agent remaining in the treated water is reduced by activated carbon and catalytic resin. Further, the organic chlorine compound decomposition reaction is promoted at pH of 9 or below and in a temperature range of 15 to 30.degree. C.

Abstract: An antifungal compound, demethylallosamidin, represented by the formula: ##STR1## is disclosed. Methods of production and antifungal compositions comprising demethylallosamidin are also provided.

Abstract: An antifungal compound, demethylallosamidin, represented by the formula: ##STR1## is disclosed. Methods of production and antifungal compositions comprising demethylallosamidin are also provided.