Abstract: In a semiconductor device and production method thereof, a technique is used to prevent film separation of the bottom electrode occurring during a heat treatment process which is carried out to make the bottom electrode closely packed and in the heat treatment process for producing dielectric crystallization. In the production method, a glue layer including an insulator is formed between SiO2 insulation layer and the inner wall of a concave hole. The SiO2 layer 14 is located on the Si board 11, and Si plug 12 and a barrier layer 13 are formed therein. A glue layer 16 is formed on the inner wall of the hole of the SiO2 insulation layer 15, and a bottom electrode 17 comprising Ru is formed on the barrier layer 13 and glue layer 16. Dielectric film 18 comprising BST and a top electrode 19 comprising Ru are laminated sequentially on the bottom electrode 17, to form a dielectric device with the bottom electrode 17.

Abstract: The present invention is a composite ceramic structure having a porosity of 5 to 40% by volume comprising particles selected from the group consisting of grains and whiskers of at least one inorganic compound AB, where B is oxygen, nitrogen or carbon and A is any metal so the difference in electronegativity between A and B is less than 1.7; or particles selected from the group consisting of grains and whiskers of an inorganic compound, where there is a difference of 1.7 and higher between the components, and having layers of the inorganic compound AB formed on the surfaces of the particles. The particles are bonded together by silicon nitride particles having an average particle size of less than 0.2 micron.