Patents by Inventor Seijiro Furukawa

Seijiro Furukawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device with crystalline silicon-germanium-carbon alloy
    Patent number: 4885614
    Abstract: The present invention discloses a semiconductor device comprising a semiconductor layer being made of monocrystalline silicon or silicon-germanium alloy and a semiconductor layer being made of silicon-germanium-carbon alloy formed thereon, wherein the two layers form a heterojunction therebetween. In such a device, no lattice mismatch occurs between the layers or even if lattice mismatch occurs, it is only slight, so that the silicon-germanium-carbon alloy layer is in no danger of causing misfit dislocation therein.
    Type: Grant
    Filed: July 8, 1988
    Date of Patent: December 5, 1989
    Assignee: Hitachi, Ltd.
    Inventors: Seijiro Furukawa, Hiroyuki Etoh, Akitoshi Ishizaka, Toshikazu Shimada