Patents by Inventor Seiki Hiramatsu
Seiki Hiramatsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11784105Abstract: A semiconductor device includes: a circuit member including a planar portion; a terminal portion formed above the front surface of the planar portion of the circuit member and parallel to the planar portion; a semiconductor element which has an upper surface located below an upper surface of the terminal portion and is formed on the front surface of the planar portion of the circuit member; a resin layer arranged on the semiconductor element and having first openings through which the semiconductor element is exposed; a conductive layer arranged on the resin layer, including an upper surface located above the upper surface of the terminal portion, and joined to the semiconductor element through the first openings; and a sealing member including an upper surface parallel to the planar portion and integrally sealing the circuit member, the semiconductor element, the resin layer, the conductive layer, and part of the terminal portion.Type: GrantFiled: December 3, 2018Date of Patent: October 10, 2023Assignee: MITSUBISHI ELECTRIC CORPORATIONInventors: Hodaka Rokubuichi, Seiki Hiramatsu, Shota Morisaki, Shinya Yano
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Publication number: 20230024580Abstract: A semiconductor module includes a first power semiconductor device, a conductive wire, and a resin film. The conductive wire is joined to a surface of a first front electrode of the first power semiconductor device. The resin film is formed to be continuous on at least one of an end portion or an end portion of a first joint between the first front electrode and the conductive wire in a longitudinal direction of the conductive wire, a surface of the first front electrode, and a surface of the conductive wire. The resin film has an elastic elongation rate of 4.5% to 10.0%.Type: ApplicationFiled: February 6, 2020Publication date: January 26, 2023Applicant: Mitsubishi Electric CorporationInventors: Ken SAKAMOTO, Haruko HITOMI, Kozo HARADA, Seiki HIRAMATSU
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Patent number: 11476170Abstract: A power semiconductor module includes an insulating substrate, a first conductive circuit pattern, a second conductive circuit pattern, a first semiconductor device, a second semiconductor device, a sealing member, and a first barrier layer. The sealing member seals the first semiconductor device, the second semiconductor device, the first conductive circuit pattern, and the second conductive circuit pattern. At least one of the first barrier layer and the sealing member includes a first stress relaxation portion. This configuration improves the reliability of the power semiconductor module.Type: GrantFiled: December 6, 2018Date of Patent: October 18, 2022Assignee: MITSUBISHI ELECTRIC CORPORATIONInventors: Yusuke Kaji, Hisayuki Taki, Seiki Hiramatsu
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Publication number: 20210391299Abstract: The semiconductor device includes: an insulating substrate having metal layers provided at a front surface and a back surface; a semiconductor element having a lower surface joined onto the metal layer on a front surface side, and having an electrode on an upper surface; a base plate; a case member; a terminal member; a wiring member that connects the terminal member and the semiconductor element; a metal thin film member that continuously covers a surface of the terminal member and a surface of the electrode connected by the wiring member, and a surface of the wiring member; and a filling member that covers a surface of the metal thin film member and the insulating substrate exposed from the metal thin film member, and is filled in a region surrounded by the base plate and the case member.Type: ApplicationFiled: December 27, 2018Publication date: December 16, 2021Applicant: Mitsubishi Electric CorporationInventors: Yusuke KAJI, Seiki HIRAMATSU
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Publication number: 20210082778Abstract: A power semiconductor module includes an insulating substrate, a first conductive circuit pattern, a second conductive circuit pattern, a first semiconductor device, a second semiconductor device, a sealing member, and a first barrier layer. The sealing member seals the first semiconductor device, the second semiconductor device, the first conductive circuit pattern, and the second conductive circuit pattern. At least one of the first barrier layer and the sealing member includes a first stress relaxation portion. This configuration improves the reliability of the power semiconductor module.Type: ApplicationFiled: December 6, 2018Publication date: March 18, 2021Applicant: Mitsubishi Electric CorporationInventors: Yusuke KAJI, Hisayuki TAKI, Seiki HIRAMATSU
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Publication number: 20200335411Abstract: A semiconductor device includes: a circuit member including a planar portion; a terminal portion formed above the front surface of the planar portion of the circuit member and parallel to the planar portion; a semiconductor element which has an upper surface located below an upper surface of the terminal portion and is formed on the front surface of the planar portion of the circuit member; a resin layer arranged on the semiconductor element and having first openings through which the semiconductor element is exposed; a conductive layer arranged on the resin layer, including an upper surface located above the upper surface of the terminal portion, and joined to the semiconductor element through the first openings; and a sealing member including an upper surface parallel to the planar portion and integrally sealing the circuit member, the semiconductor element, the resin layer, the conductive layer, and part of the terminal portion.Type: ApplicationFiled: December 3, 2018Publication date: October 22, 2020Applicant: Mitsubishi Electric CorporationInventors: Hodaka ROKUBUICHI, Seiki HIRAMATSU, Shota MORISAKI, Shinya YANO
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Patent number: 9153512Abstract: A semiconductor device includes: a semiconductor-element substrate in which a front-surface electrode pattern is formed on a surface of an insulating substrate and a back-surface electrode is formed on another surface; semiconductor elements affixed to the surface of the front-surface electrode pattern opposite the insulating substrate; and a sealing resin member which covers the semiconductor element and the semiconductor-element substrate, wherein at a position of the front-surface electrode pattern where the position has potential equivalent to that of the front-surface electrode pattern at a position where a semiconductor element is bonded, an insulating terminal table formed with a conductive relay terminal and an insulating member that insulates the relay terminal and the front-surface electrode pattern from each other are provided, and wiring from the semiconductor element to the outside is led out via the relay terminal.Type: GrantFiled: April 22, 2011Date of Patent: October 6, 2015Assignee: Mitsubishi Electric CorporationInventors: Mamoru Terai, Seiki Hiramatsu, Tatsuo Ota, Hiroya Ikuta, Takashi Nishimura
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Patent number: 9082707Abstract: A semiconductor device includes a semiconductor element substrate, wherein an electrode pattern is formed on one surface of an insulating substrate and a back-surface electrode is formed on the other surface of the insulating substrate; a stress-relaxation adhesive layer made of resin that covers at least a part of a portion of the surface of the insulating substrate where the electrode pattern and the back-surface electrode are not formed; and a semiconductor element affixed, using a bonding material, to the surface of the electrode pattern opposite the insulating substrate, and a first sealing resin member which covers the semiconductor element and the semiconductor element substrate, and a modulus of elasticity of the stress-relaxation adhesive layer is lower than that of the first sealing resin member.Type: GrantFiled: May 9, 2011Date of Patent: July 14, 2015Assignee: Mitsubshi Electric CorporationInventors: Seiki Hiramatsu, Mamoru Terai
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Patent number: 9029438Abstract: Provided is a thermosetting resin composition including an inorganic filler and a thermosetting resin matrix component, in which the inorganic filler includes secondary sintered particles each formed of primary particles of scaly boron nitride, and at least some of the secondary sintered particles each have a maximum cavity diameter of 5 ?m to 80 ?m. The thermosetting resin composition can be used for providing a heat conductive sheet in which electrical insulation property is kept by controlling where the defects such as voids and cracks occur and their size, and which has excellent heat conductivity.Type: GrantFiled: December 28, 2010Date of Patent: May 12, 2015Assignee: Mitsubishi Electric CorporationInventors: Kei Yamamoto, Takashi Nishimura, Kenji Mimura, Motoki Masaki, Seiki Hiramatsu, Xiaohong Yin
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Publication number: 20130306991Abstract: A semiconductor device includes: a semiconductor-element substrate in which a front-surface electrode pattern is formed on a surface of an insulating substrate and a back-surface electrode is formed on another surface; semiconductor elements affixed to the surface of the front-surface electrode pattern opposite the insulating substrate; and a sealing resin member which covers the semiconductor element and the semiconductor-element substrate, wherein at a position of the front-surface electrode pattern where the position has potential equivalent to that of the front-surface electrode pattern at a position where a semiconductor element is bonded, an insulating terminal table formed with a conductive relay terminal and an insulating member that insulates the relay terminal and the front-surface electrode pattern from each other are provided, and wiring from the semiconductor element to the outside is led out via the relay terminal.Type: ApplicationFiled: April 22, 2011Publication date: November 21, 2013Applicant: Mitsubishi Electric CorporationInventors: Mamoru Terai, Seiki Hiramatsu, Tatsuo Ota, Hiroya Ikuta, Takashi Nishimura
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Publication number: 20130240909Abstract: A semiconductor device includes a semiconductor element substrate, wherein an electrode pattern is formed on one surface of an insulating substrate and a back-surface electrode is formed on the other surface of the insulating substrate; a stress-relaxation adhesive layer made of resin that covers at least a part of a portion of the surface of the insulating substrate where the electrode pattern and the back-surface electrode are not formed; and a semiconductor element affixed, using a bonding material, to the surface of the electrode pattern opposite the insulating substrate, and a first sealing resin member which covers the semiconductor element and the semiconductor element substrate, and a modulus of elasticity of the stress-relaxation adhesive layer is lower than that of the first sealing resin member.Type: ApplicationFiled: May 9, 2011Publication date: September 19, 2013Applicant: Mitsubishi Electric CorporationInventors: Seiki Hiramatsu, Mamoru Terai
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Publication number: 20130012621Abstract: Provided is a thermosetting resin composition including an inorganic filler and a thermosetting resin matrix component, in which the inorganic filler includes secondary sintered particles each formed of primary particles of scaly boron nitride, and at least some of the secondary sintered particles each have a maximum cavity diameter of 5 ?m to 80 ?m. The thermosetting resin composition can be used for providing a heat conductive sheet in which electrical insulation property is kept by controlling where the defects such as voids and cracks occur and their size, and which has excellent heat conductivity.Type: ApplicationFiled: December 28, 2010Publication date: January 10, 2013Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Kei Yamamoto, Takashi Nishimura, Kenji Mimura, Motoki Masaki, Seiki Hiramatsu, Xiaohong Yin
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Patent number: 8236666Abstract: Provided is a semiconductor device including: a base plate; a thermally conductive resin layer formed on an upper surface of the base plate; an integrated layer which is formed on an upper surface of the thermally conductive resin layer, and includes an electrode and an insulating resin layer covering all side surfaces of the electrode; and a semiconductor element formed on an upper surface of the electrode, in which the integrated layer is thermocompression bonded to the base plate through the thermally conductive resin layer. This semiconductor device excels in insulating properties and reliability.Type: GrantFiled: December 5, 2007Date of Patent: August 7, 2012Assignee: Mitsubishi Electric CorporationInventors: Seiki Hiramatsu, Kei Yamamoto, Atsuko Fujino, Takashi Nishimura, Kenji Mimura, Hideki Takigawa, Hiroki Shiota, Nobutake Taniguchi, Hiroshi Yoshida
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Patent number: 8222752Abstract: Provided is an organopolysiloxane composition that provides a cured product which has excellent heat resistance and does not peel or crack even under high temperatures. The organopolysiloxane composition comprises (A) an organopolysiloxane having difunctional siloxane units (D units) and trifunctional siloxane units (T units), and a weight-average molecular weight of 37,000 to 140,000 in which the molar ratio (T/D) of the T units to the D units is 0.3 to 0.8; and (B) an organopolysiloxane having the difunctional siloxane units (D units) and the trifunctional siloxane units (T units), and a weight-average molecular weight of 1,000 to 60,000 in which the molar ratio (T/D) of the T units to the D units is 0.15 or less, the organopolysiloxane composition being characterized by having a molar ratio (B/A) of the organopolysiloxane (B) to the organopolysiloxane (A) of 1.5 to 6.5.Type: GrantFiled: December 16, 2010Date of Patent: July 17, 2012Assignee: Mitsubishi Electric CorporationInventor: Seiki Hiramatsu
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Patent number: 8193633Abstract: Provided is a heat conductive sheet obtained by dispersing an inorganic filler in a thermosetting resin, in which the inorganic filler contains secondary aggregation particles formed by isotropically aggregating scaly boron nitride primary particles having an average length of 15 ?m or less, and the inorganic filler contains more than 20 vol % of the secondary aggregation particles each having a particle diameter of 50 ?m or more. The heat conductive sheet is advantageous in terms of productivity and cost and excellent in heat conductivity and electrical insulating properties.Type: GrantFiled: September 12, 2008Date of Patent: June 5, 2012Assignee: Mitsubishi Electric CorporationInventors: Kenji Mimura, Hideki Takigawa, Hiroki Shiota, Kazuhiro Tada, Takashi Nishimura, Hiromi Ito, Seiki Hiramatsu, Atsuko Fujino, Kei Yamamoto, Motoki Masaki
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Publication number: 20120032189Abstract: Provided is an organopolysiloxane composition that provides a cured product which has excellent heat resistance and does not peel or crack even under high temperatures. The organopolysiloxane composition comprises (A) an organopolysiloxane having difunctional siloxane units (D units) and trifunctional siloxane units (T units), and a weight-average molecular weight of 37,000 to 140,000 in which the molar ratio (T/D) of the T units to the D units is 0.3 to 0.8; and (B) an organopolysiloxane having the difunctional siloxane units (D units) and the trifunctional siloxane units (T units), and a weight-average molecular weight of 1,000 to 60,000 in which the molar ratio (T/D) of the T units to the D units is 0.15 or less, the organopolysiloxane composition being characterized by having a molar ratio (B/A) of the organopolysiloxane (B) to the organopolysiloxane (A) of 1.5 to 6.5.Type: ApplicationFiled: December 16, 2010Publication date: February 9, 2012Applicant: MITSUBISHI ELECTRIC CORPORATIONInventor: Seiki HIRAMATSU
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Publication number: 20100226095Abstract: Provided is a heat conductive sheet obtained by dispersing an inorganic filler in a thermosetting resin, in which the inorganic filler contains secondary aggregation particles formed by isotropically aggregating scaly boron nitride primary particles having an average length of 15 ?m or less, and the inorganic filler contains more than 20 vol % of the secondary aggregation particles each having a particle diameter of 50 ?m or more. The heat conductive sheet is advantageous in terms of productivity and cost and excellent in heat conductivity and electrical insulating properties.Type: ApplicationFiled: September 12, 2008Publication date: September 9, 2010Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Kenji Mimura, Hideki Takigawa, Hiroki Shiota, Kazuhiro Tada, Takashi Nishimura, Hiromi Ito, Seiki Hiramatsu, Atsuko Fujino, Kei Yamamoto, Motoki Masaki
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Publication number: 20100201002Abstract: Provided is a semiconductor device including: a base plate; a thermally conductive resin layer formed on an upper surface of the base plate; an integrated layer which is formed on an upper surface of the thermally conductive resin layer, and includes an electrode and an insulating resin layer covering all side surfaces of the electrode; and a semiconductor element formed on an upper surface of the electrode, in which the integrated layer is thermocompression bonded to the base plate through the thermally conductive resin layer. This semiconductor device excels in insulating properties and reliability.Type: ApplicationFiled: December 5, 2007Publication date: August 12, 2010Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Seiki Hiramatsu, Kei Yamamoto, Atsuko Fujino, Takashi Nishimura, Kenji Mimura, Hideki Takigawa, Hiroki Shiota, Nobutake Taniguchi, Hiroshi Yoshida
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Patent number: 7514782Abstract: An objective is to provide a reliability-improved semiconductor device in which heat radiation characteristics are superior, and warpage of the semiconductor device occurring due to heat generation of a semiconductor chip or to varying of the usage environment is also suppressed. The semiconductor device is provided that includes a thermal-conductive sheet 3 formed on a base board 4, including thermal-conductive resin 6, a heat sink 2 provided on the base board 4 through the thermal-conductive sheet 3, a semiconductor chip 1 mounted on the heat sink 2, and a ceramic-embedded region 31 selectively provided in a region of the thermal-conductive sheet 3 under the semiconductor chip 1, including a ceramic component 5. In this semiconductor device, superior thermal conductivity can be ensured, and warpage and peeling in the semiconductor device occurring due to heat generation of the semiconductor chip or to varying of the usage environment can also be reduced.Type: GrantFiled: April 5, 2007Date of Patent: April 7, 2009Assignee: Mitsubishi Electric CorporationInventors: Seiki Hiramatsu, Kei Yamamoto, Atsuko Fujino, Hiromi Ito
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Patent number: 7488119Abstract: A photoelectric composite connector comprises a first connector unit which is connected to optical transmission means and a second connector unit which can be attached to and detached from a first connector unit freely. The first connector unit comprises a photoelectric conversion module and an electrical connector section having a first conductor which is electrically connected to the photoelectric conversion module. The second connector unit is formed as an electrical connector unit corresponding to the electrical connector section of the first connector unit and having a second conductor. The first conductor of the electrical connector section of the first connector unit and the second conductor of the second connector unit are electrically connected to each other when the electrical connector section of the first connector unit and the second connector unit are connected to each other by use of their electrical connector structures.Type: GrantFiled: January 22, 2007Date of Patent: February 10, 2009Assignees: Hirose Electric Co., Ltd., Mitsubishi Deni Kabushiki KaishaInventors: Takumi Yoshida, Shuji Suzuki, Hiroaki Okano, Seiki Hiramatsu