Abstract: Disclosed is a susceptor which achieves uniform temperature distribution of a wafer placed on the susceptor, and also disclosed is a substrate processing apparatus provided with the susceptor. An annular recess 12a is formed in an intermediate portion between the central portion and the peripheral portion of a wafer support surface of the susceptor 12. Due to the provision of the recess, the substrate heating effect by thermal radiation from the susceptor is suppressed in the intermediate portion. The geometrical dimension of the recess is determined taking the chamber internal pressure into consideration.

Abstract: The present invention relates to a processing apparatus for performing a film-deposition process or the like for an object to be processed (such as a semiconductor wafer) by means of a source gas and a reactive gas. The processing apparatus includes: a processing vessel (22) that contains therein an object to be processed (W); a source gas supply system (50) that selectively supplies a source gas into the processing vessel; a reactive gas supply system (52) that selectively supplies a reactive gas into the processing vessel; and a vacuum evacuating system (36) having vacuum pumps (44, 46), the system exhausting an atmosphere in the processing vessel to form a vacuum.

Abstract: A treatment gas is supplied to form a Ti-based film on a predetermined number of wafers W while setting a temperature of a susceptor 2 in a chamber 1 to a predetermined temperature. After this, the interior of the chamber 1 containing no wafers W is cleaned by discharging Cl2 gas as a cleaning gas from a shower head 10 into the chamber 1. During this cleaning, the temperature of each of the susceptor 2, the shower head 10, and the wall portion of the chamber 1 is independently controlled so that the temperature of the susceptor 2 is not lower than the decomposition start temperature of Cl2 gas and the temperature of the shower head 10 and the wall portion of the chamber 1 is not higher than the decomposition start temperature.

Abstract: A processing apparatus has a placement stage that prevents generation of a crack due to heating of an embedded heater. The placement stage (32A) on which a wafer (W) is placed has a plurality of areas (32Aa, 32Ab) so that one of the plurality of heaters is embedded independently in each of the plurality of areas. The heater (35Aa) embedded in one area (32Aa) of adjacent areas has a part (35Aa2) extending in the other area (32Ab) of the adjacent areas, and the heater (35Ab) embedded in the other area (32Ab) of the adjacent areas has a part (35Ab2) extending in the one area (32Aa).

Abstract: A semiconductor processing system includes a load lock chamber and first to third process chambers connected to an airtight transfer chamber. The second process chamber is disposed below the first process chamber and overlaps with the first process chamber. The third process chamber is disposed at a position laterally distant from the first process chamber and leveled with the first process chamber. First to third exhaust ports are formed in the bottoms of the first to third process chambers, and connected to respective vacuum exhaust sections through first to third exhaust lines. A transfer mechanism is disposed in the transfer chamber to transfer a target substrate to and from the load lock chamber and the first to third process chambers.

Abstract: Disclosed is a method of forming a titanium nitride film on a substrate through the reaction of titanium tetrachloride and ammonia while minimizing corrosion of the underlying layer. A first titanium nitride layer is formed on a substrate by reacting titanium tetrachloride and ammonia with each other in the supply-limited region while minimizing corrosion of the underlying layer. Thereafter, a second titanium nitride layer is formed on the first titanium nitride layer in the reaction-limited region while achieving good step coverage.

Abstract: The object of the present invention is to provide a plasma chemical vapor deposition method and apparatus capable of preventing local electric discharge at the peripheral portion of the susceptor. Prior to the film formation, a gas is supplied into an evacuated chamber, and a substrate is supported on substrate support pins, which is arranged in the susceptor and are in their elevated position, so that the substrate is preheated; thereafter the supply of the gas is stopped, the chamber is evacuated, and the substrate support pins are lowered so that the substrate is placed on the susceptor; and thereafter a gas is supplied into the chamber and the substrate is further preheated. Thereafter, plasma is generated in the chamber, and the film-forming gas is supplied into the chamber, to form a film on the substrate.

Abstract: A titanium silicide film is formed on an Si wafer. At first, a plasma process using an RF is performed on the Si wafer. Then, a Ti-containing source gas is supplied onto the Si wafer processed by the plasma process and plasma is generated to form a Ti film. At this time, the Ti silicide film is formed by a reaction of the Ti film with Si of the Si wafer. The plasma process is performed on the Si wafer while the Si wafer is supplied with a DC bias voltage having an absolute value of 200V or more.

Abstract: A worktable device is disposed inside a film formation process container for a semiconductor process. The worktable device includes a worktable including a top surface to place a target substrate thereon, and a side surface extending downward from the top surface, and a heater disposed in the worktable and configured to heat the substrate through the top surface. A CVD pre-coat layer covers the top surface and the side surface of the worktable. The pre-coat layer has a thickness not less than a thickness which substantially saturates the amount of radiant heat originating from heating of the heater and radiated from the top surface and the side surface of the worktable.

Abstract: A gas shower head installed opposedly to the surface of a substrate, having a large number of holes in the surface thereof opposed to the substrate, and feeding multiple types of film forming gases fed from a gas feed passage simultaneously to the substrate through the holes, comprising a shower head body having a plurality of metal members with contact faces locally joined to each other by metal diffusion by heating the plurality of the metal members under specified temperature conditions in the stacked state in vertical direction and a plurality of gas flow passages passing through the inside of the shower head body so as to cross the contact faces and formed independently of each other for each type of the film forming gases so that these film forming gases are not mixed with each other, wherein the temperature conditions are such that the locally joined portions by metal diffusion can be separated from each other by a reheating performed later.

Abstract: A semiconductor processing system includes a load lock chamber and first to third process chambers connected to an airtight transfer chamber. The second process chamber is disposed below the first process chamber and overlaps with the first process chamber. The third process chamber is disposed at a position laterally distant from the first process chamber and leveled with the first process chamber. First to third exhaust ports are formed in the bottoms of the first to third process chambers, and connected to respective vacuum exhaust sections through first to third exhaust lines. A transfer mechanism is disposed in the transfer chamber to transfer a target substrate to and from the load lock chamber and the first to third process chambers.

Abstract: A method for producing telomerase reverse transcriptase comprising the steps of infecting an insect cell with a baculovirus containing a DNA encoding telomerase reverse transcriptase, and then culturing the infected cell to express the telomerase reverse transcriptase is disclosed.

Abstract: The present invention provides an apparatus and method for forming a film by loading an object to be processed into a process chamber, moving up supporting pins to receive the susceptor, heating the object to be processed with heat radiation for a predetermined time by means of a heater housed in the susceptor while the supporting pins is being moved up, mounting the object to be processed on the susceptor, introducing arbitrarily chosen gases to adjust an inner pressure and temperature in accordance with the film formation conditions, and introducing a raw material gas into the process chamber, thereby starting film formation. After completion of the film-formation, only the supply of the raw material gas is stopped, whereas supply of other gases is gradually stopped. When the object to be processed is unloaded from the process chamber after completion of the film formation process, first, supporting pins are moved up to move the object to be processed away from the heater housed in the susceptor.

Abstract: There is provided a method of forming a structure connecting a first conductive layer and a second conductive layer in a semiconductor device comprising the steps of forming an insulating film on the first conductive layer, forming a hole in the insulating layer in which a surface of the first conductive layer is partially exposed, forming a titanium layer on a surface of the first conductive layer exposed at least in the hole, nitriding a surface of the titanium layer, oxidizing an un-nitrided part of the surface of the titanium layer, forming a titanium nitride layer on the titanium layer, and forming the second conductive layer on the titanium nitride layer.

Abstract: An apparatus for supplying a low vapor pressure liquid material for deposition to a deposition chamber in which the low vapor pressure liquid material is pushed out of a pressurization passage by a pressure gas to a pressure liquid supply passage; a flow rate of the low vapor pressure liquid material is controlled by a flow rate control unit, and the flow rate of the low vapor pressure liquid is supplied to an evaporator and evaporated into vapor there; and the vapor is fed to the deposition chamber through a vapor feed passage provided with heating means for preventing the vapor from re-liquefying, whereby the liquid material for deposition is supplied stably and accurately.

Abstract: A method for forming a CVD film, comprising the steps of loading at least one object to be processed into a processing chamber and positioning the object on a support base in the processing chamber, after positioning the object in the processing chamber, introducing a process gas from a corresponding gas supply source via a corresponding gas introducing pipe into the processing chamber and forming a film by a chemical vapor deposition method on the object in the processing chamber, after forming the film on the object, unloading the object from the processing chamber, after unloading the object from the processing chamber, dry-cleaning an inside of the processing chamber, and after dry-cleaning the inside of the processing chamber, introducing an inert gas via a corresponding gas introducing pipe into the chamber to purge those particles deposited as a residue in the gas introducing pipe and inside of the chamber.

Abstract: A barrier metal layer comprises a titanium film having a surface nitrided and modified by a nitrogen compound containing nitrogen atoms, and a titanium nitride film formed on a surface of the titanium film. The titanium film and titanium nitride film are interposed between a base layer, or a lower layer of a semiconductor device, and a metal film or an upper layer of the semiconductor device.

Abstract: A process for producing a purified aqueous hydrogen peroxide solution comprising bringing an aqueous hydrogen peroxide solution containing impurities into contact with an anion exchange resin in the fluoride form is disclosed.According to the process, impurities in the aqueous hydrogen peroxide solution, particularly impurities containing silicon, such as silicates and silicic acid, can efficiently be removed, and a purified aqueous hydrogen peroxide solution having a high purity can be obtained.

Abstract: A film forming apparatus having a dry cleaning function comprises a process chamber for containing an object to be processed, a process gas supply system for introducing into the process chamber a process gas for forming one of a metal film or a metal compound film on the object, a heating device for depositing a component of the process gas on the object, thereby forming a film, a cleaning gas supply system for introducing into the process chamber a cleaning gas containing nitrogen trichloride or a fluoride such as chlorine trifluoride or nitrogen trifluoride for cleaning one of a metal or a metal compound adhering to an inner part of the process chamber due to the film formation, and an after-treatment gas supply system for introducing into the process chamber a cleaning after-treatment gas containing an alcohol.

Abstract: When an object of treatment is subjected to, for example, a gas treatment in an airtight chamber, reaction products adhere to the inner wall surface of the chamber, an object holder therein, and the corner portions of the chamber. When a cleaning medium is injected into the chamber, according to the present invention, the reaction products are dissolved in the cleaning medium by hydrolysis. Thereafter, the cleaning medium is discharged from the chamber. Then, the chamber is heated and evacuated, so that water vapor is discharged to provide a predetermined degree of vacuum, whereupon the treatment can be started anew. Therefore, a wiping operation can be omitted. Moreover, the reaction products remaining at the corner portions of the chamber can be removed without forming a source of polluted particles, so that the necessity of overhauling can be obviated. Thus, fully automatic cleaning, so to speak, can be effected, and the chamber need not be open to the atmosphere, so that the throughput can be improved.