Abstract: An ECR plasma source of the invention is constructed of: a plasma generating chamber (10) having a generally rectangular section in a plane normal to a plasma flow; magnetic coils (20, 21) wound in generally rectangular shapes in a plane normal to the plasma flow; and a direct introduction type or branching and binding introduction type waveguide (30) or microwave cavity resonator. Microwaves are transmitted into the plasma generating chamber (10) from a plurality of openings (34) which are formed in such side faces in the waveguide (30) or the microwave cavity resonator as correspond to in-phase microwave portions. Moreover, an ECR plasma device comprises the aforementioned ECR plasma source and a sample moving mechanism for moving a large-sized sample.

Abstract: An ECR plasma source of the invention is constructed of: a plasma generating chamber (10) having a generally rectangular section in a plane normal to a plasma flow; magnetic coils (20, 21) wound in generally rectangular shapes in a plane normal to the plasma flow; and a direct introduction type or branching and binding introduction type waveguide (30) or microwave cavity resonator. Microwaves are transmitted into the plasma generating chamber (10) from a plurality of openings (34) which are formed in such side faces in the waveguide (30) or the microwave cavity resonator as correspond to in-phase microwave portions. Moreover, an ECR plasma device comprises the aforementioned ECR plasma source and a sample moving mechanism for moving a large-sized sample.

Abstract: According to this invention, illumination light for illuminating a mask on which a micropattern is drawn is inclined at an angle corresponding to a numerical aperture of an optical projection lens located below the mask with respect to an optical axis. The illumination light is obliquely incident on the mask to expose the micropattern on an object located below the optical projection lens.

Abstract: In a plasma processing apparatus, a gas to be activated into a plasma is introduced into a plasma formation chamber through a gas introducing pipe. Input microwave energy from a microwave source is also supplied to the plasma formation chamber, so that the introduced gas is activated into the plasma by electron cyclotron resonance. The input microwave energy in a TE mode from the microwave source is received by a tapered waveguide in which a dielectric plate is accommodated, so that at least a part of the input microwave energy is transformed into microwave energy in a TM mode or hybrid mode having an electric field component in the direction of the propagation of the input microwave. Microwave energy in both the modes is introduced into the plasma formation chamber through a microwave introducing window.

Abstract: In a microwave ion source utilizing a microwave and a magnetic field, a microwave introducing window has a multilayer structure of plates with different dielectric constants, a magnetic circuit is arranged to generate a magnetic field having a higher intensity than that defined by ECR (Electron Cyclotron Resonance) conditions so as to form a narrow high-density plasma, an ion extraction electrode has an ion extraction window whose contour falls within a center region of the narrow high-density plasma.

Abstract: A semiconductor integrated circuit in which layers such as an field isolation region, a gate electrode, interlayer insulating films and interconnection lines are formed by the combined use of a lift-off process and an ECR plasma deposition process. According to the present invention, even if vertical dimensions of patterns of the respective layers are large as compared with their lateral dimensions, the upper surfaces of the respective layers can be planarized, permitting the fabrication of an LSI of high packing density, high operating speed and high reliability which is free from shorting and breakage of the interconnection lines.

Abstract: A semiconductor device in which a film of an insulator a conductor is closely deposited in a groove formed in a semiconductor substrate or an insulating or conductor layer thereon to planarize the surface thereof.A semiconductor device manufacturing process in which a specimen is selectively etched away through using a resist pattern as a mask, a pattern forming film is deposited by a plasma deposition technique on the specimen, and the resist film is removed, whereby the pattern forming film closed fills up a groove formed by etching to provide a planarized surface.

Abstract: A thin film which becomes a membrane is formed over one major surface of a substrate by a plasma deposition process utilizing microwave electron cyclotron resonance. The substrate is then removed, other than a portion of the substrate which remains as a frame, so as to form a membrane structure. A dense and high quality membrane is formed at a low temperature and the internal stress of the membrane controlled by varying the conditions under which the plasma deposition process is carried out and by heat treating the thin film after its formation.

Abstract: A semiconductor integrated circuit in which layers such as an field isolation region, a gate electrode, interlayer insulating films and interconnection lines are formed by the combined use of a lift-off process and an ECR plasma deposition process. According to the present invention, even if vertical dimensions of patterns of the respective layers are large as compared with their lateral dimensions, the upper surfaces of the respective layers can be planarized, permitting the fabrication of an LSI of high packing density, high operating speed and high reliability which is free from shorting and breakage of the interconnection lines.

Abstract: A plasma deposition apparatus comprising a plasma formation chamber into which a gas is introduced to produce plasma, a specimen chamber in which a specimen table is disposed for placing thereon a speciment substrate on which a thin film is to be formed, a plasma extraction window interposed between the plasma formation chamber and the specimen chamber, a target which is made of a sputtering material and is interposed between the plasma extraction window and the specimen table, a first means for extracting ions for sputtering the target from a plasma stream extracted from the plasma formation chamber to impinge against the target, and a second means for extracting the plasma stream through the plasma extraction window into the specimen chamber and for transporting the sputtered and ionized atoms to the specimen substrate period on the specimen table.

Abstract: An ion shower apparatus comprising a plasma formation chamber in which plasma is produced so as to produce ions, a single ion extraction grid disposed in one portion of the plasma formation chamber and for extracting the ions from the plasma formation chamber so as to form an ion beam in the form of shower, a specimen chamber in which the surface of a specimen subjected to etching or deposition or a target subjected to sputtering is irradiated with the ion beam in the form of shower, and a shield grid disposed in the vicinity of the ion extraction grid in the plasma formation chamber and spaced apart from the thickness of the plasma sheath produced over the ion extraction grid, in a manner that the shield grid permits the passage of the plasma therethrough and prevents the electric field produced by the ion extraction grid substantially from extending to the remaining region of the plasma formation chamber. The ion extraction grid is not damaged. An ion beam with a high current is obtained stably.

Abstract: A semiconductor manufacturing method which uses a refractory metal as a lift-off material and employs, in combination, a dry etching process suitable for forming a miniature pattern without undercutting and a film deposition method for deposing the lift-off material with directionality in a direction perpendicular to the substrate surface. A semiconductor device is fabricated by a lift-off method which is free from the fear of contamination, permits easy lift off of the lift-off material, even if large in area, and hence suitable for the formation of a high-density pattern.

Abstract: A plasma deposition apparatus having a plasma formation chamber and a specimen chamber which are arranged separately. Gaseous material and microwave power are introduced to the plasma formation chamber to generate plasma by a microwave discharge through electron cyclotron resonance. The plasma is extracted to the specimen chamber from the plasma extracting orifice. In the specimen chamber, the plasma is accelerated by the effect of divergent magnetic field to irradiate the surface of the specimen so as to deposit a thin film on the specimen substrate. A high-quality thin film is formed with a high efficiency at a low temperature. Accordingly, a thin film can be deposited on a specimen substrate having a low heat resistivity. The plasma deposition apparatus is useful for manufacturing various kinds of electronic devices.