Patents by Inventor Seiya NAKAZAWA
Seiya NAKAZAWA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11916112Abstract: An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal and having a first main surface as a device surface, a second main surface at a side opposite to the first main surface, and a side surface connecting the first main surface and the second main surface, a main surface insulating layer including an insulating material, covering the first main surface of the SiC semiconductor layer, and having an insulating side surface continuous to the side surface of the SiC semiconductor layer, and a boundary modified layer including a first region that is modified to be of a property differing from the SiC monocrystal and a second region that is modified to be of a property differing from the insulating material, and being formed across the side surface of the SiC semiconductor layer and the insulating side surface of the main surface insulating layer.Type: GrantFiled: August 8, 2019Date of Patent: February 27, 2024Assignee: ROHM CO., LTD.Inventors: Yasuhiro Kawakami, Yuki Nakano, Masaya Ueno, Seiya Nakazawa, Sawa Haruyama, Yasunori Kutsuma
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Publication number: 20230223433Abstract: An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal that is constituted of a hexagonal crystal and having a first main surface as a device surface facing a c-plane of the SiC monocrystal and has an off angle inclined with respect to the c-plane, a second main surface at a side opposite to the first main surface, and a side surface facing an a-plane of the SiC monocrystal and has an angle less than the off angle with respect to a normal to the first main surface when the normal is 0°.Type: ApplicationFiled: February 22, 2023Publication date: July 13, 2023Inventors: Yuki NAKANO, Masaya UENO, Sawa HARUYAMA, Yasuhiro KAWAKAMI, Seiya NAKAZAWA, Yasunori KUTSUMA
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Publication number: 20230223445Abstract: An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal and having a first main surface as an element forming surface, a second main surface at a side opposite to the first main surface, and a plurality of side surfaces connecting the first main surface and the second main surface, and a plurality of modified lines formed one layer each at the respective side surfaces of the SiC semiconductor layer and each extending in a band shape along a tangential direction to the first main surface of the SiC semiconductor layer and modified to be of a property differing from the SiC monocrystal.Type: ApplicationFiled: March 8, 2023Publication date: July 13, 2023Inventors: Masaya UENO, Yuki NAKANO, Sawa HARUYAMA, Yasuhiro KAWAKAMI, Seiya NAKAZAWA, Yasunori KUTSUMA
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Patent number: 11626490Abstract: An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal and having a first main surface as an element forming surface, a second main surface at a side opposite to the first main surface, and a plurality of side surfaces connecting the first main surface and the second main surface, and a plurality of modified lines formed one layer each at the respective side surfaces of the SiC semiconductor layer and each extending in a band shape along a tangential direction to the first main surface of the SiC semiconductor layer and modified to be of a property differing from the SiC monocrystal.Type: GrantFiled: August 8, 2019Date of Patent: April 11, 2023Assignee: ROHM CO., LTD.Inventors: Masaya Ueno, Yuki Nakano, Sawa Haruyama, Yasuhiro Kawakami, Seiya Nakazawa, Yasunori Kutsuma
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Patent number: 11621319Abstract: An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal that is constituted of a hexagonal crystal and having a first main surface as a device surface facing a c-plane of the SiC monocrystal and has an off angle inclined with respect to the c-plane, a second main surface at a side opposite to the first main surface, and a side surface facing an a-plane of the SiC monocrystal and has an angle less than the off angle with respect to a normal to the first main surface when the normal is 0°.Type: GrantFiled: August 8, 2019Date of Patent: April 4, 2023Assignee: ROHM CO., LTD.Inventors: Yuki Nakano, Masaya Ueno, Sawa Haruyama, Yasuhiro Kawakami, Seiya Nakazawa, Yasunori Kutsuma
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Publication number: 20230019769Abstract: A semiconductor device includes an SiC semiconductor layer which has a first main surface on one side and a second main surface on the other side, a semiconductor element which is formed in the first main surface, a raised portion group which includes a plurality of raised portions formed at intervals from each other at the second main surface and has a first portion in which some of the raised portions among the plurality of raised portions overlap each other in a first direction view as viewed in a first direction which is one of the plane directions of the second main surface, and an electrode which is formed on the second main surface and connected to the raised portion group.Type: ApplicationFiled: September 27, 2022Publication date: January 19, 2023Inventors: Seiya NAKAZAWA, Sawa HARUYAMA
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Patent number: 11489051Abstract: A semiconductor device includes an SiC semiconductor layer which has a first main surface on one side and a second main surface on the other side, a semiconductor element which is formed in the first main surface, a raised portion group which includes a plurality of raised portions formed at intervals from each other at the second main surface and has a first portion in which some of the raised portions among the plurality of raised portions overlap each other in a first direction view as viewed in a first direction which is one of the plane directions of the second main surface, and an electrode which is formed on the second main surface and connected to the raised portion group.Type: GrantFiled: March 26, 2019Date of Patent: November 1, 2022Assignee: ROHM CO., LTD.Inventors: Seiya Nakazawa, Sawa Haruyama
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Publication number: 20210296448Abstract: An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal and having a first main surface as a device surface, a second main surface at a side opposite to the first main surface, and a side surface connecting the first main surface and the second main surface, a main surface insulating layer including an insulating material, covering the first main surface of the SiC semiconductor layer, and having an insulating side surface continuous to the side surface of the SiC semiconductor layer, and a boundary modified layer including a first region that is modified to be of a property differing from the SiC monocrystal and a second region that is modified to be of a property differing from the insulating material, and being formed across the side surface of the SiC semiconductor layer and the insulating side surface of the main surface insulating layer.Type: ApplicationFiled: August 8, 2019Publication date: September 23, 2021Inventors: Yasuhiro KAWAKAMI, Yuki NAKANO, Masaya UENO, Seiya NAKAZAWA, Sawa HARUYAMA, Yasunori KUTSUMA
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Publication number: 20210233994Abstract: An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal that is constituted of a hexagonal crystal and having a first main surface as a device surface facing a c-plane of the SiC monocrystal and has an off angle inclined with respect to the c-plane, a second main surface at a side opposite to the first main surface, and a side surface facing an a-plane of the SiC monocrystal and has an angle less than the off angle with respect to a normal to the first main surface when the normal is 0°.Type: ApplicationFiled: August 8, 2019Publication date: July 29, 2021Inventors: Yuki NAKANO, Masaya UENO, Sawa HARUYAMA, Yasuhiro KAWAKAMI, Seiya NAKAZAWA, Yasunori KUTSUMA
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Publication number: 20210234007Abstract: An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal and having a first main surface as an element forming surface, a second main surface at a side opposite to the first main surface, and a plurality of side surfaces connecting the first main surface and the second main surface, and a plurality of modified lines formed one layer each at the respective side surfaces of the SiC semiconductor layer and each extending in a band shape along a tangential direction to the first main surface of the SiC semiconductor layer and modified to be of a property differing from the SiC monocrystal.Type: ApplicationFiled: August 8, 2019Publication date: July 29, 2021Inventors: Masaya UENO, Yuki NAKANO, Sawa HARUYAMA, Yasuhiro KAWAKAMI, Seiya NAKAZAWA, Yasunori KUTSUMA
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Publication number: 20210020754Abstract: A semiconductor device includes an SiC semiconductor layer which has a first main surface on one side and a second main surface on the other side, a semiconductor element which is formed in the first main surface, a raised portion group which includes a plurality of raised portions formed at intervals from each other at the second main surface and has a first portion in which some of the raised portions among the plurality of raised portions overlap each other in a first direction view as viewed in a first direction which is one of the plane directions of the second main surface, and an electrode which is formed on the second main surface and connected to the raised portion group.Type: ApplicationFiled: March 26, 2019Publication date: January 21, 2021Inventors: Seiya NAKAZAWA, Sawa HARUYAMA