Abstract: A MEMS biochemical sensor configured to sense a target molecule, such as a DNA molecule, a protein molecule, and a viruses molecule. The biochemical sensor may include a cell and a readout module. The cell is configured to be coupled to a probe molecule, to retain a pre-sensing charge before the probe molecule is exposed to the target molecule, and to retain a sensing charge after the probe molecule is exposed to the target molecule. The readout module is coupled to the cell and configured to generate a measurement signal based on the pre-sensing charge and the sensing charge.

Abstract: This disclosure discusses various methods for manufacturing uncooled infrared detectors by using foundry-defined silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) wafers, each of which may include a substrate layer, an insulation layer having a pixel region and a wall region surrounding the pixel region, a pixel structure formed on the pixel region of the insulation layer, a wall structure formed adjacent to the pixel structure and on the wall region of the insulation layer, a dielectric layer covering the pixel structure and the wall structure, a pixel mask formed within the dielectric layer and for protecting the pixel structure during a dry etching process, and a wall mask formed within the dielectric layer and for protecting the wall structure during the dry etching process, thereby releasing a space defined between the wall structure and the pixel structure after the dry etching process.

Abstract: A MEMS biochemical sensor configured to sense a target molecule, such as a DNA molecule, a protein molecule, and a viruses molecule. The biochemical sensor may include a cell and a readout module. The cell is configured to be coupled to a probe molecule, to retain a pre-sensing charge before the probe molecule is exposed to the target molecule, and to retain a sensing charge after the probe molecule is exposed to the target molecule. The readout module is coupled to the cell and configured to generate a measurement signal based on the pre-sensing charge and the sensing charge.

Abstract: A MEMS biochemical sensor configured to sense a target molecule, such as a DNA molecule, a protein molecule, and a viruses molecule. In one embodiment, the biochemical sensor may include a cell and a readout module. The cell is configured to be coupled to a probe molecule, to retain a pre-sensing charge before the probe molecule is exposed to the target molecule, and to retain a sensing charge after the probe molecule is exposed to the target molecule. The readout module is coupled to the cell and configured to generate a measurement signal based on the pre-sensing charge and the sensing charge.

Abstract: Embodiments of a read-out integrated circuit (ROIC) include a plurality of unit cells. Each unit cell includes a bias subsystem, a reset switch, at least one integration capacitor, and at least one read switch. A focal plane array includes a plurality of photo detectors disposed in a grid and a ROIC. A column buffer includes a first buffer subsystem, a feedback subsystem, a first and second correlated double sampling subsystem, and a second buffer subsystem. A ROIC includes at least one integration subsystem having a transistor subsection, a poly silicon layer, and a plurality of active layer sections.

Abstract: The images sensor includes a readout circuit capacitatively coupled to a memory circuit. The readout circuit includes: (i) a photon detector to receive a plurality of photons and to provide a charge signal corresponding to the received photons, (ii) a resettable integrator that is reset multiple times over a single exposure time and provides an analog representation of the incident photons during the last integration cycle, and (iii) a comparator that monitors the integrator output and generates a reset pulse when the integrator reaches a built-in threshold value. The memory circuit includes: (i) a receiver circuit that detects the output of the digital driver in the front-end readout circuit via capacitive coupling and generates a digital voltage pulse for each received signal, and (ii) a digital counting memory to count the received pulses to provide a coarse digital representation of how many times the integrator is reset.

Abstract: This disclosure discusses various methods for manufacturing uncooled infrared detectors by using foundry-defined silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) wafers, each of which may include a substrate layer, an insulation layer having a pixel region and a wall region surrounding the pixel region, a pixel structure formed on the pixel region of the insulation layer, a wall structure formed adjacent to the pixel structure and on the wall region of the insulation layer, a dielectric layer covering the pixel structure and the wall structure, a pixel mask formed within the dielectric layer and for protecting the pixel structure during a dry etching process, and a wall mask formed within the dielectric layer and for protecting the wall structure during the dry etching process, thereby releasing a space defined between the wall structure and the pixel structure after the dry etching process.

Abstract: The images sensor includes a readout circuit capacitatively coupled to a memory circuit. The readout circuit includes: (i) a photon detector to receive a plurality of photons and to provide a charge signal corresponding to the received photons, (ii) a resettable integrator that is reset multiple times over a single exposure time and provides an analog representation of the incident photons during the last integration cycle, and (iii) a comparator that monitors the integrator output and generates a reset pulse when the integrator reaches a built-in threshold value. The memory circuit includes: (i) a receiver circuit that detects the output of the digital driver in the front-end readout circuit via capacitive coupling and generates a digital voltage pulse for each received signal, and (ii) a digital counting memory to count the received pulses to provide a coarse digital representation of how many times the integrator is reset.

Abstract: A MEMS biochemical sensor configured to sense a target molecule, such as a DNA molecule, a protein molecule, and a viruses molecule. In one embodiment, the biochemical sensor may include a cell and a readout module. The cell is configured to be coupled to a probe molecule, to retain a pre-sensing charge before the probe molecule is exposed to the target molecule, and to retain a sensing charge after the probe molecule is exposed to the target molecule. The readout module is coupled to the cell and configured to generate a measurement signal based on the pre-sensing charge and the sensing charge.

Abstract: The images sensor includes a readout circuit capacitatively coupled to a memory circuit. The readout circuit includes: (i) a photon detector to receive a plurality of photons and to provide a charge signal corresponding to the received photons, (ii) a resettable integrator that is reset multiple times over a single exposure time and provides an analog representation of the incident photons during the last integration cycle, and (iii) a comparator that monitors the integrator output and generates a reset pulse when the integrator reaches a built-in threshold value. The memory circuit includes: (i) a receiver circuit that detects the output of the digital driver in the front-end readout circuit via capacitive coupling and generates a digital voltage pulse for each received signal, and (ii) a digital counting memory to count the received pulses to provide a coarse digital representation of how many times the integrator is reset.

Abstract: The images sensor includes a readout circuit capacitatively coupled to a memory circuit. The readout circuit includes: (i) a photon detector to receive a plurality of photons and to provide a charge signal corresponding to the received photons, (ii) a resettable integrator that is reset multiple times over a single exposure time and provides an analog representation of the incident photons during the last integration cycle, and (iii) a comparator that monitors the integrator output and generates a reset pulse when the integrator reaches a built-in threshold value. The memory circuit includes: (i) a receiver circuit that detects the output of the digital driver in the front-end readout circuit via capacitive coupling and generates a digital voltage pulse for each received signal, and (ii) a digital counting memory to count the received pulses to provide a coarse digital representation of how many times the integrator is reset.

Abstract: The disclosure relates to a method and apparatus for noise suppression in an LVDS receiver by providing improved common mode noise immunity through a bypass circuit. In one embodiment, the disclosure relates to an apparatus for providing Low Voltage Differential signaling (LVDS). The apparatus includes a preamplifier circuit for receiving a DC component of a first signal and providing a first processed DC signal; a first bypass circuit for receiving an AC component of the first signal, the first bypass circuit providing a first AC output signal; a first node for combining the processed DC signal with the first AC output signal to form a first combined output signal; and an amplifier circuit for amplifying the first combined output signal and a second signal to provide a first amplified signal and a second amplified signal, wherein the first bypass circuit is in parallel with the preamplifier circuit.

Abstract: Embodiments of a read-out integrated circuit (ROIC) include a plurality of unit cells. Each unit cell includes a bias subsystem, a reset switch, at least one integration capacitor, and at least one read switch. A focal plane array includes a plurality of photo detectors disposed in a grid and a ROIC. A column buffer includes a first buffer subsystem, a feedback subsystem, a first and second correlated double sampling subsystem, and a second buffer subsystem. A ROIC includes at least one integration subsystem having a transistor subsection, a poly silicon layer, and a plurality of active layer sections.

Abstract: Micromachined, CMOS p+-active/n-well diodes are used as infrared sensing elements in uncooled Focal Plane Arrays (FPA). The FPAs are fabricated using a standard CMOS process followed by post-CMOS bulk-micromachining steps without any critical lithography or complicated deposition processes. Micromachining steps include Reactive Ion Etching (RIE) to reach the bulk silicon and anisotropic silicon wet etching together with electrochemical etch-stop technique to obtain thermally isolated p+-active/n-well diodes. The FPAs are monolithically integrated with their readout circuit since they are fabricated in any standard CMOS technology.