Abstract: An electron beam exposure method is described which provides a means of curing spin-on-glass or spin-on-polymer dielectric material formed on a semiconductor wafer. The dielectric material insulates the conductive metal layer and planarizes the topography in the process of manufacturing multilayered integrated circuits. The method utilizes a large area, uniform electron beam exposure system in a soft vacuum environment. A wafer coated with uncured dielectric material is irradiated with electrons of sufficient energy to penetrate the entire thickness of the dielectric material and is simultaneously heated by infrared heaters. By adjusting the process conditions, such as electron beam total dose and energy, temperature of the wafer, and ambient atmosphere, the properties of the cured dielectric material can be modified.

Abstract: A process for increasing the etch resistance of the upper surface of photoresists by a surface-intensive dose of electron beam radiation. Such imparts increased surface etch resistance to the photoresist without causing as much shrinkage in the bulk of the film. A photographic image is produced by imagewise exposing a photographic composition layer on a substrate to activating energy to produce a latent pattern on the layer. This is followed by developing the photographic layer to thereby remove the nonimage areas thereof and leaving the image areas thereof in the form of a pattern on the substrate. The imaged layer is then overall irradiated to electron beam radiation for the full depth of the layer and then overall irradiated to electron beam radiation one or more additional times at a depth which is less than the full depth of the layer.

Abstract: A process for decreasing the linewidth of photoresist images which are suitable for use in the production of microelectronic devices such as integrated circuits. A photosensitive composition is coated onto a substrate, exposed to activating energy to decompose the polymer in the imagewise exposed areas; and developed to remove the exposed nonimage areas thus producing a pattern of lines having a linewidth of from about 100 nm to about 200 nm. Then the image areas are controllably irradiated to sufficient electron beam radiation to thereby reduce the linewidth by an amount of from about 5% to about 50%.

Abstract: A process for increasing the etch resistance of photoresists, especially positive working 193 nm sensitive photoresists which are suitable for use in the production of microelectronic devices such as integrated circuits. A 193 nm photosensitive composition is coated onto a substrate, exposed to activating energy at a wavelength of 193 nm to decompose the polymer in the imagewise exposed areas; and developed to remove the exposed nonimage areas. Then the image areas are exposed to sufficient electron beam radiation to increase the resistance of the image areas to an etchant.