Abstract: An object is to provide a novel organometallic complex capable of emitting phosphorescence, an organometallic complex which exhibits deep red emission, and a light-emitting element which provides deep red emission. Provided is an organometallic complex having a structure represented by the following General Formula (G1). In the formula, R1 R2, R3, R4, R5, R6, R7, R8, and R9 represent substituents, and M is a central metal and represents either a Group 9 element or a Group 10 element.

Abstract: A light-emitting element having high external quantum efficiency is provided. A light-emitting element having a long lifetime is provided. A light-emitting layer is provided between a pair of electrodes. The light-emitting layer is a stack of a first light-emitting layer, which contains a first phosphorescent compound, a first organic compound having an electron-transport property, and a second organic compound having a hole-transport property and is provided on the anode side, and a second light-emitting layer, which contains at least a second phosphorescent compound and the first organic compound having an electron-transport property. A combination of the first organic compound and the second organic compound forms an exciplex.

Abstract: An object is to provide a novel anthracene derivative. Another object is to provide a light-emitting element with high luminous efficiency. Yet another object is to provide a light-emitting element with a long lifetime. Still another object is to provide a light-emitting device and an electronic device having a long lifetime by using the light-emitting elements of the present invention. The anthracene derivative represented by General Formula (1) is provided. The ability of the anthracene derivative represented by General Formula (1) to exhibit high luminous efficiency allows the production of a light-emitting element with high luminous efficiency and a long lifetime.

Abstract: A switching converter in which deterioration and breakage can be suppressed is provided. A switching converter whose area can be reduced is provided. The switching converter includes a switch connected to a power supply portion; a transformer connected to the power supply portion; a first rectifying and smoothing circuit and a second rectifying and smoothing circuit each connected to at least the transformer; and a switching control circuit which is connected to the first rectifying and smoothing circuit and the second rectifying and smoothing circuit and which controls operation of the switch. The switching control circuit includes a control circuit controlling on/off of the switch and operation of a starter circuit; and the starter circuit controlling startup of the control circuit. The starter circuit includes a transistor and a resistor each including a wide-gap semiconductor.

Abstract: A light-emitting layer, which is a stack of a first light-emitting layer and a second light-emitting layer, is provided between an anode and a cathode. The first light-emitting layer is formed on the anode side and contains a first light-emitting substance converting triplet excitation energy into light emission, a first organic compound having an electron-transport property, and a second organic compound having a hole-transport property. The second light-emitting layer contains a second light-emitting substance converting triplet excitation energy into light emission, the second organic compound, and a third organic compound having an electron-transport property. The first organic compound has a higher LUMO level than the third organic compound. The first light-emitting substance emits light with a wavelength shorter than that of light emitted from the second light-emitting substance. The first and the second organic compounds form an exciplex. The second and the third organic compounds form an exciplex.

Abstract: A solid-state image sensing element including a transistor with stable electrical characteristics (e.g., significantly low off-state current) is provided. Two different element layers (an element layer including an oxide semiconductor layer and an element layer including a photodiode) are stacked over a semiconductor substrate provided with a driver circuit such as an amplifier circuit, so that the area occupied by a photodiode is secured. A transistor including an oxide semiconductor layer in a channel formation region is used as a transistor electrically connected to the photodiode, which leads to lower power consumption of a semiconductor device.

Abstract: In a semiconductor device in which transistors are formed in a plurality of layers to form a stack structure, a method for manufacturing the semiconductor device formed by controlling the threshold voltage of the transistors formed in the layers selectively is provided. Further, a method for manufacturing the semiconductor device by which oxygen supplying treatment is effectively performed is provided. First oxygen supplying treatment is performed on a first oxide semiconductor film including a first channel formation region of a transistor in the lower layer. Then, an interlayer insulating film including an opening which is formed so that the first channel formation region is exposed is formed over the first oxide semiconductor film and second oxygen supplying treatment is performed on a second oxide semiconductor film including a second channel formation region over the interlayer insulating film and the exposed first channel formation region.

Abstract: A thin film transistor includes a gate insulating layer covering a gate electrode, a semiconductor layer in contact with the gate insulating layer, and impurity semiconductor layers which are in contact with part of the semiconductor layer and which form a source region and a drain region. The semiconductor layer includes a microcrystalline semiconductor layer formed on the gate insulating layer and a microcrystalline semiconductor region containing nitrogen in contact with the microcrystalline semiconductor layer. The thin film transistor in which off-current is small and on-current is large can be manufactured with high productivity.

Abstract: An object is to suppress electrochemical decomposition of an electrolyte solution and the like at a negative electrode in a lithium ion battery or a lithium ion capacitor; thus, irreversible capacity is reduced, cycle performance is improved, or operating temperature range is extended. A negative electrode for a power storage device including a negative electrode current collector, a negative electrode active material layer which is over the negative electrode current collector and includes a plurality of particles of a negative electrode active material, and a film covering part of the negative electrode active material. The film has an insulating property and lithium ion conductivity.

Abstract: A graphene oxide used as a raw material of a conductive additive for forming an active material layer with high electron conductivity with a small amount of a conductive additive is provided. A positive electrode for a nonaqueous secondary battery using the graphene oxide as a conductive additive is provided. The graphene oxide is used as a raw material of a conductive additive in a positive electrode for a nonaqueous secondary battery and, in the graphene oxide, the weight ratio of oxygen to carbon is greater than or equal to 0.405.

Abstract: A novel polymerizable monomer is provided. A novel liquid crystal composition which can be used in a variety of liquid crystal devices is provided using the polymerizable monomer. The use of the novel liquid crystal composition makes it possible to reduce driving voltage of a liquid crystal element and to reduce power consumption of a liquid crystal display device. A polymerizable monomer represented by General Formula (G1) is provided. A liquid crystal composition which includes a polymerizable monomer represented by General Formula (H1), a nematic liquid crystal, and a chiral material is also provided. In General Formulae (G1) and (H1), n and m are individually an integer from 1 to 20, and R1 and R2 individually represent hydrogen or a methyl group. In General Formulae (G1), k is 2 or 3.

Abstract: A power storage device is reduced in weight. A metal sheet serving as a negative electrode current collector is separated and another negative electrode current collector is formed. For example, through the step of forming silicon serving as a negative electrode active material layer over a titanium sheet and then performing heating, the titanium sheet can be separated. Then, another negative electrode current collector with a thickness of more than or equal to 10 nm and less than or equal to 1 ?m is formed. Thus, light weight of the power storage device can be achieved.

Abstract: A distance measurement device with high detection accuracy. The distance measurement device includes a photosensor including a light-receiving element, a first transistor, and a second transistor; a wiring; a signal line; and a power supply line. The wiring is electrically connected to one electrode of the light-receiving element. The signal line is electrically connected to a gate electrode of the first transistor. The power supply line is electrically connected to one of a source electrode and a drain electrode of the second transistor. One of a source electrode and a drain electrode of the first transistor is electrically connected to a gate electrode of the second transistor. The other of the source electrode and the drain electrode of the first transistor is electrically connected to the other electrode of the light-receiving element and the other of the source electrode and the drain electrode of the second transistor.

Abstract: There has been a problem that difference in refractive index between an opposite substrate or a moisture barrier layer provided thereover, and air is maintained large, and light extraction efficiency is low. Further, there has been a problem that peeling or cracking due to the moisture barrier layer is easily generated, which leads to deteriorate the reliability and lifetime of a light-emitting element. A light-emitting element comprises a pixel electrode, an electroluminescent layer, a transparent electrode, a passivation film, a stress relieving layer, and a low refractive index layer, all of which are stacked sequentially. The stress relieving layer serves to prevent peeling of the passivation film. The low refractive index layer serves to reduce reflectivity of light generated in the electroluminescent layer in emitting to air. Therefore, a light-emitting element with high reliability and long lifetime and a display device using the light-emitting element can be provided.

Abstract: The occurrence of defective orientation of a composite of a polymer and a liquid crystal is suppressed. Furthermore, the occurrence of defective display of a liquid crystal display device including the composite of a polymer and a liquid crystal is suppressed. The composite of a polymer and a liquid includes a plurality of domains with different periods of alignment, a boundary formed between the plurality of domains, and a region where the plurality of domains adjoin and bond to one another without the boundary. The composite of a polymer and a liquid crystal exhibits a blue phase.

Abstract: Degradation in image quality of a display image is prevented. A pixel portion which includes a plurality of pixel circuits in row and column directions is divided into a plurality of regions in the row direction. In each of the plurality of regions, operation in which data is written to the pixel circuits on a row basis and the pixel circuits to which the data is written are irradiated with light corresponding to the written data is performed a plurality of times in one frame period in such a manner that at least three single-color image data for displaying the three primary colors are written in one frame period; and black image data is written to the pixel circuits every time before any of the plurality of single-color image data is written to the pixel circuits in each of the plurality of regions.

Abstract: The present invention has an object of providing a light-emitting device including an OLED formed on a plastic substrate, which prevents degradation due to penetration of moisture or oxygen. On a plastic substrate, a plurality of films for preventing oxygen or moisture from penetrating into an organic light-emitting layer in the OLED (“barrier films”) and a film having a smaller stress than the barrier films (“stress relaxing film”), the film being interposed between the barrier films, are provided. Owing to a laminate structure, if a crack occurs in one of the barrier films, the other barrier film(s) can prevent moisture or oxygen from penetrating into the organic light emitting layer. The stress relaxing film, which has a smaller stress than the barrier films, is interposed between the barrier films, making it possible to reduce stress of the entire sealing film. Therefore, a crack due to stress hardly occurs.

Abstract: The memory device includes a first logic element which is supplied with a first power supply voltage, and inverts a polarity of a potential of an input terminal to output the potential with the inverted polarity from an output terminal, a second logic element which is supplied with a second power supply voltage supplied through a different path from the first power supply voltage, and inverts a polarity of a potential of an input terminal to output the potential with the inverted polarity from an output terminal, a first memory circuit connected to the input terminal of the first logic element, and a second memory circuit connected to the input terminal of the second logic element. The input terminal and the output terminal of the first logic element are connected to the output terminal and the input terminal of the second logic element, respectively.

Abstract: A non-linear element, such as a diode, in which an oxide semiconductor is used and a rectification property is favorable is provided. In a thin film transistor including an oxide semiconductor in which the hydrogen concentration is less than or equal to 5×1019/cm3, the work function ?ms of a source electrode in contact with the oxide semiconductor, the work function ?md of a drain electrode in contact with the oxide semiconductor, and electron affinity ? of the oxide semiconductor satisfy ?ms??<?md. By electrically connecting a gate electrode and the drain electrode of the thin film transistor, a non-linear element with a more favorable rectification property can be achieved.

Abstract: A semiconductor device is described, which includes a first transistor, a second transistor, and a capacitor. The second transistor and the capacitor are provided over the first transistor so as to overlap with a gate of the first transistor. A semiconductor layer of the second transistor and a dielectric layer of the capacitor are directly connected to the gate of the first transistor. The second transistor is a vertical transistor, where its channel direction is perpendicular to an upper surface of a semiconductor layer of the first transistor.