Patents by Inventor Semiconductor Manufacturing International Corporation (Shanghai)

Semiconductor Manufacturing International Corporation (Shanghai) has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130168861
    Abstract: An electrically conductive device and a manufacturing method thereof are provided. According to the method, a protein tube portion and a conductor penetrating through the protein tube portion are formed on a graphene layer, and the conductor is in electrical contact with the graphene layer. A dummy dielectric material layer surrounding the protein tube portion can be formed on the graphene layer for support. The graphene layer can be protected from damage during the formation of the protein tube portion and the conductor because no etching process is employed in the formation. The method can facilitate the application of graphene in semiconductor devices as conductive interconnects.
    Type: Application
    Filed: October 30, 2012
    Publication date: July 4, 2013
    Applicants: Semiconductor Manufacturing International Corporation (Beijing), Semiconductor Manufacturing International Corporation (Shanghai)
    Inventors: Semiconductor Manufacturing International Corporation (Shanghai), Semiconductor Manufacturing International Corporation (Beijing)