Abstract: An electrostatic chuck 55 comprises an electrostatic member 100 including a dielectric 115 having a surface 120 adapted to receive a substrate 30. The dielectric 115 covers an electrode 105 that is chargeable to electrostatically hold the substrate 30. The base 175 comprises a composite of a plurality of materials, such as, ceramic and metal, for example silicon carbide and aluminum. Optionally, a support 190 can be provided to support the base 175.

Abstract: An electrostatic chuck 55 has an electrostatic member 100 including a dielectric 115 having a surface 120 adapted to receive the substrate 30. The dielectric 115 covers an electrode 105 that is chargeable to electrostatically hold the substrate 30. A support 190 below the electrostatic member 100 has a cavity 300 adapted to hold a gas to serve as a thermal insulator to regulate the flow of heat from the electrostatic chuck 55 to a surface 120 of the chamber 25. The cavity 300 has a cross-sectional profile that is shaped to provide a predetermined temperature profile across the substrate 30.

Abstract: An electrostatic chuck 100 useful for holding a substrate 55 in a high density plasma, comprises a dielectric covered electrode 110 having at least one heat transfer gas flow conduit 150 therein. An electrical isolator 200 comprising dielectric material is positioned in the gas flow conduit 150 to (i) electrically isolate the gas in the conduit from the plasma or electrode 110, and (ii) allow passage of heat transfer gas through the conduit. Preferably, the dielectric material comprises a plasma-deactivating material that has a high surface area that reduces plasma formation of gas passing through the conduit 150 in a plasma process. A semiconducting dielectric member 115 useful for rapidly charging and discharging electrostatic chucks is also described.