Abstract: An ion detection system for detecting incident ions including an ion-to-electron converter for converting incident ions to secondary electrons, an accelerating assembly including at least one of an electric field and a magnetic field for acceleration and transfer of the secondary electrons to a scintillator, the scintillator for converting the accelerated secondary electrons to an initial flux of photons, a photon channeling assembly including a first photon channel and a second photon channel, wherein the photon channeling assembly is configured for separating the initial flux of photons into at least a first photon flux channeled into the first photon channel and a second photon flux channeled into the second photon channel, and at least one photodetector for detecting at least one of a first optical signal generated at the first photon channel, and a second optical signal generated at the second photon channel.

Abstract: An ion detection system comprising an upper plate configured for propagation of ions therethrough, a lower plate comprising a converter configured for converting ions impinging thereon to secondary electrons, a secondary electron multiplication assembly configured for receiving the secondary electrons and comprising at least one or optionally a series of oppositely facing pairs of dynodes, wherein in the optional series of oppositely facing pairs of dynodes, each pair is spaced apart from an adjacent pair, and wherein a first electric field is created in between the oppositely facing pair of dynodes. A magnetic system is provided for generating a magnetic field.

Abstract: An in-vacuum light sensor system, including a light sensor assembly comprising a photocathode configured for converting an impinging photon to a photoelectron, a semiconductor diode configured for multiplying the photoelectron impinging thereon, and a housing including vacuum-compatible materials configured for being placed in a vacuum chamber. The housing is configured for housing the photocathode and the semiconductor diode and for propagation of the photoelectron from the photocathode to the semiconductor diode. An electrical biasing subassembly is configured for electrically biasing at least the photocathode and the semiconductor diode, and the vacuum chamber is configured for positioning the light sensor apparatus therein.

Abstract: A magnetic photomultiplier tube (PMT) system, including a PMT. The PMT including a photocathode for converting an impinging photon to a photoelectron, an anode, and at least two or a series of oppositely facing pairs of dynodes, wherein each pair is spaced apart from an adjacent pair, a first electric field being generated intermediate at least one pair of oppositely facing dynodes and a second electric field generated intermediate at least one adjacent pairs of dynodes. The PMT system includes a magnetic field generated by a magnetic system, the PMT being positioned within the magnetic field.

Abstract: A magnetic photomultiplier tube (PMT) system, comprising a PMT. The PMT comprising a photocathode for converting an impinging photon to a photoelectron, an anode, and at least two or a series of oppositely facing pairs of dynodes, wherein each pair is spaced apart from an adjacent pair, a first electric field being generated intermediate at least one pair of oppositely facing dynodes and a second electric field generated intermediate at least one adjacent pairs of dynodes. The PMT system comprises a magnetic field generated by a magnetic system, the PMT being positioned within the magnetic field.

Abstract: An electron detector assembly configured for detecting electrons emitted from a sample irradiated by an electron beam, including a scintillator configured with a scintillator layer formed with a scintillating surface. The scintillator layer emits light signals corresponding to impingement of electrons upon the scintillating surface. A light guide plate is coupled to the scintillator layer and includes a peripheral surface. One or more silicon photomultiplier devices are positioned upon the peripheral surface, wherein one or more silicon photomultiplier devices are arranged perpendicularly or obliquely relative to the scintillating surface. The silicon photomultiplier device is configured to yield an electrical signal from an electron impinging upon the scintillator surface.

Abstract: An electron detector assembly configured for detecting electrons emitted from a sample irradiated by an electron beam, comprising a scintillator including a scintillator layer, the scintillator layer emitting light signals corresponding to impingement of electrons thereupon, a light guide plate coupled to the scintillator layer and comprising a peripheral surface, and a single or plurality of silicon photomultiplier devices positioned upon the peripheral surface and arranged perpendicularly or obliquely relative to the scintillating surface, the silicon photomultiplier device being configured to yield an electrical signal from an electron impinging upon the scintillator layer.

Abstract: An electron detection system for detecting secondary electrons emitted from a sample irradiated by a Focused Ion Beam (FIB). The FIB emanates from a FIB column and travels along a beam axis within a beam region, which extends from the FIB column to the sample. The system comprises an electron detector configured for detecting the secondary electrons, and a deflecting field configured to deflect a trajectory of the secondary electrons, which were propagating towards the FIB column, to propel away from the beam axis and towards the electron detector. The deflecting field may be configured to divert the trajectory of secondary electrons while the secondary electrons are generally within the beam region.

Abstract: An electron detector assembly configured for detecting electrons emitted from a sample irradiated by an electron beam, comprising a scintillator including a scintillator layer, the scintillator layer emitting light signals corresponding to impingement of electrons thereupon, a light guide plate coupled to the scintillator layer and comprising a peripheral surface, and a single or plurality of silicon photomultiplier devices positioned upon the peripheral surface and arranged perpendicularly or obliquely relative to the scintillating surface, the silicon photomultiplier device being configured to yield an electrical signal from an electron impinging upon the scintillator layer.

Abstract: An electron detection system for detecting secondary electrons emitted from a sample irradiated by a Focused Ion Beam (FIB). The FIB emanates from a FIB column and travels along a beam axis within a beam region, which extends from the FIB column to the sample. The system comprises an electron detector configured for detecting the secondary electrons, and a deflecting field configured to deflect a trajectory of the secondary electrons, which were propagating towards the FIB column, to propel away from the beam axis and towards the electron detector. The deflecting field may be configured to divert the trajectory of secondary electrons while the secondary electrons are generally within the beam region.

Abstract: A system for selectively detecting charged particles produced due to operation of a charged particle beam column irradiating a specimen, including a proximal grid being selectively electrically biasable and configured for controllably directing the charged particles by electrically focusing the charged particles to compel selected secondary charged particles, whereupon being selected from the charged particles, to be attracted thereto, and to repel unselected secondary charged particles therefrom, a distal grid spaced apart from the proximal grid and separated therefrom by a gap and being selectively electrically biasable and configured for attracting the selected secondary and/or tertiary charged particles, whereupon being selected from the charged particles, to the distal grid, and to repel unselected tertiary charged particles therefrom, and a charged particle detector configured for detecting selected secondary charged particles attracted to the proximal and/or distal grid and detecting selected tertiary

Abstract: The invention discloses a charged particle detecting apparatus for detecting positive ions, negative ions and electrons emitted from a sample, the apparatus comprising a housing, defining a chamber in its interior, which is confined by conductive walls, and has an opening to the outside of said housing; a grid for selectively attracting charged particles, wherein the grid is electrically biasable with respect to said housing and functionally aligned with said opening; a converter arrangement with a converter surface, which is electrically biasable with respect to the grid and with respect to the housing, and which is positioned such that charged particles attracted into the chamber by the grid impact on the converter surface; an electron detector, which is biasable with respect to the converter surface in such a way that electrons emitted from the converter surface impact on the electron detector.

Abstract: A system for selectively detecting charged particles produced due to operation of a charged particle beam column irradiating a specimen, including a proximal grid being selectively electrically biasable and configured for controllably directing the charged particles by electrically focusing the charged particles to compel selected secondary charged particles, whereupon being selected from the charged particles, to be attracted thereto, and to repel unselected secondary charged particles therefrom, a distal grid spaced apart from the proximal grid and separated therefrom by a gap and being selectively electrically biasable and configured for attracting the selected secondary and/or tertiary charged particles, whereupon being selected from the charged particles, to the distal grid, and to repel unselected tertiary charged particles therefrom, and a charged particle detector configured for detecting selected secondary charged particles attracted to the proximal and/or distal grid and detecting selected tertiary

Abstract: The invention discloses a charged particle detecting apparatus for detecting positive ions, negative ions and electrons emitted from a sample, the apparatus comprising a housing, defining a chamber in its interior, which is confined by conductive walls, and has an opening to the outside of said housing; a grid for selectively attracting charged particles, wherein the grid is electrically biasable with respect to said housing and functionally aligned with said opening; a converter arrangement with a converter surface, which is electrically biasable with respect to the grid and with respect to the housing, and which is positioned such that charged particles attracted into the chamber by the grid impact on the converter surface; an electron detector, which is biasable with respect to the converter surface in such a way that electrons emitted from the converter surface impact on the electron detector.

Abstract: A multi-purpose efficient charge particle detector that by switching bias voltages measures either secondary ions, or secondary electrons (SE) from a sample, or secondary electrons that originate from back scattered electrons (SE3), is described. The basic version of the detector structure and two stripped down versions enable its use for the following detection combinations: The major version is for measuring secondary ions, or secondary electrons from the sample, or secondary electrons due to back-scattered electrons that hit parts other than the sample together or without secondary electrons from the sample. Measuring secondary ions or secondary electrons from the sample (no SE3). Measuring secondary electrons from the sample and/or secondary electrons resulting from back-scattered electrons hitting objects other than the sample (no ions).

Abstract: A multi-purpose efficient charge particle detector that by switching bias voltages measures either secondary ions, or secondary electrons (SE) from a sample, or secondary electrons that originate from back scattered electrons (SE3), is described. The basic version of the detector structure and two stripped down versions enable its use for the following detection combinations: 1. The major version is for measuring secondary ions, or secondary electrons from the sample, or secondary electrons due to back-scattered electrons that hit parts other than the sample together or without secondary electrons from the sample. 2. Measuring secondary ions or secondary electrons from the sample (no SE3). 3. Measuring secondary electrons from the sample and/or secondary electrons resulting from back-scattered electrons hitting objects other than the sample (no ions).