Patents by Inventor Senji Wada

Senji Wada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Alkoxide compound and raw material for forming thin film
    Patent number: 10118940
    Abstract: An alkoxide compound represented by the following formula (I), and a raw material for thin film formation containing the alkoxide compound. In the formula, R1 represents a linear or branched alkyl group having 2 to 4 carbon atoms, and R2 and R3 each represent a linear or branched alkyl group having 1 to 4 carbon atoms. In the formula (I), R1 is preferably an ethyl group. It is also preferred that one or both of R2 and R3 be an ethyl group. The raw material for thin film formation including an alkoxide compound represented by general formula (I) is preferably used as a raw material for chemical vapor deposition.
    Type: Grant
    Filed: May 15, 2012
    Date of Patent: November 6, 2018
    Assignee: ADEKA CORPORATION
    Inventors: Senji Wada, Akio Saito, Tomoharu Yoshino
  • ?-ketoimine ligand, method of preparing the same, metal complex comprising the same and method of forming thin film using the same
    Patent number: 9359382
    Abstract: The ?-ketoimine ligand is represented by the following formula 1: wherein R1 and R2 are each independently a C1-C5 alkyl group. A metal complex compound includes the ?-ketoimine ligand. A method of forming the ?-ketoimine ligand and a method of forming a thin film using the metal complex compound including ?-ketoimine ligand are provided.
    Type: Grant
    Filed: June 27, 2014
    Date of Patent: June 7, 2016
    Assignees: SAMSUNG ELECTRONICS CO., LTD., ADEKA CORPORATION
    Inventors: Youn-Joung Cho, Senji Wada, Jung-Sik Choi, Jin-Seo Lee, Atsushi Sakurai, Kyoo-Chul Cho, Atsuya Yoshinaka, Haruyoshi Sato, Junji Ueyama, Tomoharu Yoshino, Masako Shimizu
  • ?-ketoimine ligand, method of preparing the same, metal complex comprising the same and method of forming thin film using the same
    Patent number: 9359383
    Abstract: The ?-ketoimine ligand is represented by the following formula 1: wherein R1 and R2 are each independently a C1-C5 alkyl group. A metal complex compound includes the ?-ketoimine ligand. A method of forming the ?-ketoimine ligand and a method of forming a thin film using the metal complex compound including ?-ketoimine ligand are provided.
    Type: Grant
    Filed: June 30, 2014
    Date of Patent: June 7, 2016
    Assignees: SAMSUNG ELECTRONICS CO., LTD., ADEKA CORPORATION
    Inventors: Youn-Joung Cho, Senji Wada, Jung-Sik Choi, Jin-Seo Lee, Atsushi Sakurai, Kyoo-Chul Cho, Atsuya Yoshinaka, Haruyoshi Sato, Junji Ueyama, Tomoharu Yoshino, Masako Shimizu
  • BETA-KETOIMINE LIGAND, METHOD OF PREPARING THE SAME, METAL COMPLEX COMPRISING THE SAME AND METHOD OF FORMING THIN FILM USING THE SAME
    Publication number: 20140316164
    Abstract: The ?-ketoimine ligand is represented by the following formula 1: wherein R1 and R2 are each independently a C1-C5 alkyl group. A metal complex compound includes the ?-ketoimine ligand. A method of forming the ?-ketoimine ligand and a method of forming a thin film using the metal complex compound including ?-ketoimine ligand are provided.
    Type: Application
    Filed: June 30, 2014
    Publication date: October 23, 2014
    Applicant: ADEKA CORPORATION
    Inventors: Youn-Joung CHO, Senji WADA, Jung-Sik CHOI, Jin-Seo LEE, Atsushi SAKURAI, Kyoo-Chul CHO, Atsuya YOSHINAKA, Haruyoshi SATO, Junji UEYAMA, Tomoharu YOSHINO, Masako SHIMIZU
  • BETA-KETOIMINE LIGAND, METHOD OF PREPARING THE SAME, METAL COMPLEX COMPRISING THE SAME AND METHOD OF FORMING THIN FILM USING THE SAME
    Publication number: 20140309456
    Abstract: The ?-ketoimine ligand is represented by the following formula 1: wherein R1 and R2 are each independently a C1-C5 alkyl group. A metal complex compound includes the ?-ketoimine ligand. A method of forming the ?-ketoimine ligand and a method of forming a thin film using the metal complex compound including ?-ketoimine ligand are provided.
    Type: Application
    Filed: June 27, 2014
    Publication date: October 16, 2014
    Applicant: ADEKA CORPORATION
    Inventors: Youn-Joung CHO, Senji WADA, Jung-Sik CHOI, Jin-Seo LEE, Atsushi SAKURAI, Kyoo-Chul CHO, Atsuya YOSHINAKA, Haruyoshi SATO, Junji UEYAMA, Tomoharu YOSHINO, Masako SHIMIZU
  • ALKOXIDE COMPOUND AND RAW MATERIAL FOR FORMING THIN FILM
    Publication number: 20140174323
    Abstract: An alkoxide compound represented by the following formula (I), and a raw material for thin film formation containing the alkoxide compound. In the formula, R1 represents a linear or branched alkyl group having 2 to 4 carbon atoms, and R2 and R3 each represent a linear or branched alkyl group having 1 to 4 carbon atoms. In the formula (I), R1 is preferably an ethyl group. It is also preferred that one or both of R2 and R3 be an ethyl group. The raw material for thin film formation including an alkoxide compound represented by general formula (I) is preferably used as a raw material for chemical vapor deposition.
    Type: Application
    Filed: May 15, 2012
    Publication date: June 26, 2014
    Applicant: ADEKA CORPORATION
    Inventors: Senji Wada, Akio Saito, Tomoharu Yoshino
  • Metal compound, material for chemical vapor phase growth, and process for forming metal-containing thin film
    Patent number: 8357815
    Abstract: A novel metal compound of general formula (1), a material for chemical vapor phase growth containing the compound, and a process for forming a metal-containing thin film by chemical vapor phase growth using the material. Among the compounds of formula (1), those wherein X is a chlorine atom are preferred because of inexpensiveness and high volatility. When M is titanium, those wherein m is 1 are preferred as having a greater difference between a volatilization temperature (vapor temperature) and a deposition temperature (reaction temperature), which provides a broader process margin. In formula (1), M is titanium, zirconium, or hafnium; X is a halogen atom; and m is 1 or 2.
    Type: Grant
    Filed: October 22, 2008
    Date of Patent: January 22, 2013
    Assignee: Adeka Corporation
    Inventors: Naoki Yamada, Atsuya Yoshinaka, Senji Wada
  • BETA-KETOIMINE LIGAND, METHOD OF PREPARING THE SAME, METAL COMPLEX COMPRISING THE SAME AND METHOD OF FORMING THIN FILM USING THE SAME
    Publication number: 20120251724
    Abstract: The ?-ketoimine ligand is represented by the following formula 1: wherein R1 and R2 are each independently a C1-C5 alkyl group. A metal complex compound includes the ?-ketoimine ligand. A method of forming the ?-ketoimine ligand and a method of forming a thin film using the metal complex compound including ?-ketoimine ligand are provided.
    Type: Application
    Filed: March 30, 2012
    Publication date: October 4, 2012
    Inventors: Youn-Joung CHO, Senji WADA, Jung-Sik CHOI, Jin-Seo LEE, Atsushi SAKURAI, Kyoo-Chul CHO, Atsuya YOSHINAKA, Haruyoshi SATO, Junji UEYAMA., Tomoharu YOSHINO, Masako SHIMIZU
  • Metal alkoxide compound, material for forming thin film, and method for producing thin film
    Patent number: 8003814
    Abstract: A metal alkoxide compound represented by the following general formula (1), wherein each of R1 to R8 is independently a hydrogen atom or a methyl group; M is a titanium, a zirconium or a hafnium atom.
    Type: Grant
    Filed: September 12, 2007
    Date of Patent: August 23, 2011
    Assignee: Adeka Corporation
    Inventors: Senji Wada, Tetsuji Abe, Atsushi Sakurai, Takashi Higashino, Ryusaku Fujimoto, Masako Shimizu
  • METAL COMPOUND, MATERIAL FOR CHEMICAL VAPOR PHASE GROWTH, AND PROCESS FOR FORMING METAL-CONTAINING THIN FILM
    Publication number: 20100247765
    Abstract: A novel metal compound of general formula (1), a material for chemical vapor phase growth containing the compound, and a process for forming a metal-containing thin film by chemical vapor phase growth using the material. Among the compounds of formula (1), those wherein X is a chlorine atom are preferred because of inexpensiveness and high volatility. When M is titanium, those wherein m is 1 are preferred as having a greater difference between a volatilization temperature (vapor temperature) and a deposition temperature (reaction temperature), which provides a broader process margin. In formula (1), M is titanium, zirconium, or hafnium; X is a halogen atom; and m is 1 or 2.
    Type: Application
    Filed: October 22, 2008
    Publication date: September 30, 2010
    Applicant: ADEKA CORPORATION
    Inventors: Naoki Yamada, Atsuya Yoshinaka, Senji Wada
  • METAL ALKOXIDE COMPOUND, MATERIAL FOR FORMING THIN FILM,AND METHOD FOR PRODUCING THIN FILM
    Publication number: 20080187662
    Abstract: A metal alkoxide compound represented by the following general formula (1), wherein each of R1 to R8 is independently a hydrogen atom or a methyl group; M is a titanium, a zirconium or a hafnium atom.
    Type: Application
    Filed: September 12, 2007
    Publication date: August 7, 2008
    Applicant: ADEKA CORPORATION
    Inventors: Senji Wada, Tetsuji Abe, Atsushi Sakurai, Takashi Higashino, Ryusaku Fujimoto, Masako Shimizu