Patents by Inventor Senpeng HUANG
Senpeng HUANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11978833Abstract: The present invention provides a white light LED package structure and a white light source system, which includes a substrate, an LED chip, and a wavelength conversion material layer. The peak emission wavelength of the LED chip is between 400 nm and 425 nm; the peak emission wavelength of the wavelength conversion material layer is between 440 nm and 700 nm, and the wavelength conversion material layer absorbs light emitted from the LED chip and emits a white light source; and the emission spectrum of the white light source is set as P(?), the emission spectrum of a blackbody radiation having the same color temperature as the white light source is S(?), P(?max) is the maximum light intensity within 380-780 nm, S(?max) is the maximum light intensity of the blackbody radiation within 380-780 nm, D(?) is a difference between the spectrum of the white light LED and the spectrum of the blackbody radiation, and within 510-610 nm, the white light source satisfies: D(?)=P(?)/P(?max)?S(?)/S(?max), ?0.Type: GrantFiled: December 1, 2021Date of Patent: May 7, 2024Assignee: QUANZHOU SANAN SEMICONDUCTOR TECHNOLOGY CO., LTD.Inventors: Senpeng Huang, Junpeng Shi, Weng-Tack Wong, Shunyi Chen, Zhenduan Lin, Chih-wei Chao, Chen-ke Hsu
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Publication number: 20230343906Abstract: An LED packaging device includes a packaging substrate, a LED chip and a packaging layer. The LED chip is disposed on a die-bonding area and between the packaging layer and the packaging substrate. The packaging layer (300) around the LED chip is configured with a stepped structure, and steps of which are defined as a first step, a second step, until an nth step sequentially in order from top to bottom. Each the step includes a step surface and a vertical surface, and a maximum horizontal distance between the vertical surface of the first step and the LED chip is less than a horizontal distance between the vertical surface of the nth step and the LED chip. The stepped structure reduces a thickness of the packaging layer around a side wall of the LED chip to reduce stress releasing of the packaging layer and increase reliability of the packaging device.Type: ApplicationFiled: July 6, 2023Publication date: October 26, 2023Inventors: Shunyi CHEN, Senpeng HUANG, Dacheng LI, Junpeng SHI, Changchin YU, Chen-ke HSU
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Publication number: 20230299252Abstract: A light-emitting diode (LED) package includes a packaging substrate having a first surface, an LED chip disposed on the first surface, and a light-transmissible unit disposed on the first surface and formed with an indentation defined by an indentation-defining wall which cooperates with the first surface to form a cavity in which the LED chip is enclosed. The indentation-defining wall includes a base part, a peripheral part, and a first connecting part that interconnects the base part and the peripheral part and that includes one of a curved surface, an inclined surface, and a combination thereof. Other two LED packages are also disclosed.Type: ApplicationFiled: January 9, 2023Publication date: September 21, 2023Inventors: Tianyu YAN, Senpeng HUANG, Dacheng LI, Shunyi CHEN, Changchin YU
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Publication number: 20230275072Abstract: A light-emitting device includes a substrate, first and second chips, a first buffer layer, and an encapsulating layer. The substrate includes first and second surfaces opposite to each other. Each of the first and second chips is disposed on the first surface of the substrate, and is formed with top and bottom surfaces opposite to each other and side surfaces that are connected to the top surface and the bottom surface. The first buffer layer is disposed on the top surface of the second chip. The substrate has two edges spaced apart from each other in one of a first direction and a second direction. Each of the first and second chips has a minimum distance distant from one of the two edges in one of the two directions. Another light-emitting device is also disclosed.Type: ApplicationFiled: March 20, 2023Publication date: August 31, 2023Inventors: Wenhua BAI, Shunyi CHEN, Senpeng HUANG, Jian LIU, Changchin YU, Weng-Tack WONG, Chen-ke HSU
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Publication number: 20230207754Abstract: A light-emitting diode (LED) device includes a substrate, an LED chip, a light-transmissive element, and a bonding layer. The substrate has a first surface and a second surface opposite to the first surface in a thickness direction. The first surface has a functional region. The LED chip is disposed on the functional region of the first surface of the substrate. The light-transmissive element is disposed on the first surface of the substrate, and covers the LED chip. The bonding layer connects the substrate with the light-transmissive element, and is disposed on the substrate outside the functional region. The LED device has a surrounding surface. Cross sections of the surrounding surface in the thickness direction are straight lines that extend in the thickness direction.Type: ApplicationFiled: February 13, 2023Publication date: June 29, 2023Inventors: Qiuxia LIN, Dacheng LI, Senpeng HUANG, Changchin YU, Chen-ke HSU
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Publication number: 20230207766Abstract: A light emitting device includes a package substrate, a patterned conductive layer, an LED chip, and an encapsulation layer. The patterned conductive layer is located on top of the package substrate, and has an isolation region that separates the patterned conductive layer into a first region and a second region. The LED chip is located on top of the patterned conductive layer. The encapsulation layer covers the LED chip and the patterned conductive layer. The encapsulation layer forms an optical structure that corresponds to the LED chip in position and that has a lateral curved surface covering a side wall of the LED chip. When light emitted from the LED chip radiates through the optical structure, the light emitting device has a viewing angle exceeding 120°.Type: ApplicationFiled: February 22, 2023Publication date: June 29, 2023Applicant: Quanzhou Sanan Semiconductor Technology Co., Ltd.Inventors: Qiuxia LIN, Senpeng HUANG, Jian LIU, Changchin Yu, Chen-ke HSU
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Publication number: 20230018253Abstract: A LED device includes multiple LED chips each including opposite first and second surfaces, a side surface, and an electrode assembly disposed on the second surface and including first and second electrodes. The first surface of each of the LED chips is a light exit surface. The LED device further includes an electric circuit layer assembly disposed on the second surfaces of the LED chips and having opposite first and second surfaces and a side surface. The first surface is electrically connected to the first and second electrodes. The LED device further includes an encapsulating layer enclosing the LED chips and the electric circuit layer assembly to expose the second surface of the electric circuit layer assembly.Type: ApplicationFiled: September 16, 2022Publication date: January 19, 2023Inventors: Junpeng SHI, Chen-Ke HSU, Chang-Chin YU, Yanqiu LIAO, Zhenduan LIN, Zhaowu HUANG, Senpeng HUANG
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Patent number: 11462517Abstract: A light-emitting diode (LED) device includes a base plate, an LED chip unit disposed on the base plate, and a light conversion layer disposed on and covering the LED chip unit. The LED chip unit includes a first chip and a second chip. The first chip emits a first excitation light having an emission peak wavelength ranging from 385 nm to 425 nm. The second chip emits a second excitation light having an emission peak wavelength greater than that of the first excitation light. The light conversion layer is configured to convert the first and second excitation lights to excited lights having different emission peak wavelengths, each of which ranges from 440 nm to 700 nm. A mixture of the excited lights is white light.Type: GrantFiled: June 11, 2020Date of Patent: October 4, 2022Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Ping Zhang, Junpeng Shi, Senpeng Huang, Zhen-duan Lin, Shunyi Chen, Chen-ke Hsu
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Patent number: 11450651Abstract: A LED device includes multiple LED chips each including opposite first and second surfaces, a side surface, and an electrode assembly disposed on the second surface and including first and second electrodes. The first surface of each of the LED chips is a light exit surface. The LED device further includes an electric circuit layer assembly disposed on the second surfaces of the LED chips and having opposite first and second surfaces and a side surface. The first surface is electrically connected to the first and second electrodes. The LED device further includes an encapsulating layer enclosing the LED chips and the electric circuit layer assembly to expose the second surface of the electric circuit layer assembly.Type: GrantFiled: January 14, 2020Date of Patent: September 20, 2022Assignee: QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY CO., LTD.Inventors: Junpeng Shi, Chen-Ke Hsu, Chang-Chin Yu, Yanqiu Liao, Zhenduan Lin, Zhaowu Huang, Senpeng Huang
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Publication number: 20220093832Abstract: The present invention provides a white light LED package structure and a white light source system, which includes a substrate, an LED chip, and a wavelength conversion material layer. The peak emission wavelength of the LED chip is between 400 nm and 425 nm; the peak emission wavelength of the wavelength conversion material layer is between 440 nm and 700 nm, and the wavelength conversion material layer absorbs light emitted from the LED chip and emits a white light source; and the emission spectrum of the white light source is set as P(?), the emission spectrum of a blackbody radiation having the same color temperature as the white light source is S(?), P(?max) is the maximum light intensity within 380-780 nm, S(?max) is the maximum light intensity of the blackbody radiation within 380-780 nm, D(?) is a difference between the spectrum of the white light LED and the spectrum of the blackbody radiation, and within 510-610 nm, the white light source satisfies: D(?)=P(?)/P(?max)?S(?)/S(?max), ?0.Type: ApplicationFiled: December 1, 2021Publication date: March 24, 2022Inventors: Senpeng HUANG, Junpeng SHI, Weng-Tack WONG, Shunyi CHEN, Zhenduan LIN, Chih-wei CHAO, Chen-ke HSU
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Patent number: 11217732Abstract: The present invention provides a white light LED package structure and a white light source system, which includes a substrate, an LED chip, and a wavelength conversion material layer. The peak emission wavelength of the LED chip is between 400 nm and 425 nm; the peak emission wavelength of the wavelength conversion material layer is between 440 nm and 700 nm, and the wavelength conversion material layer absorbs light emitted from the LED chip and emits a white light source; and the emission spectrum of the white light source is set as P(?), the emission spectrum of a blackbody radiation having the same color temperature as the white light source is S(?), P(?max) is the maximum light intensity within 380-780 nm, S(?max) is the maximum light intensity of the blackbody radiation within 380-780 nm, D(?) is a difference between the spectrum of the white light LED and the spectrum of the blackbody radiation, and within 510-610 nm, the white light source satisfies: D(?)=P(?)/P(?max)?S(W)/S(?max), ?0.Type: GrantFiled: March 5, 2020Date of Patent: January 4, 2022Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Senpeng Huang, Junpeng Shi, Weng-Tack Wong, Shunyi Chen, Zhenduan Lin, Chih-Wei Chao, Chen-Ke Hsu
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Patent number: 11005008Abstract: A light emitting device includes an LED chip, a light-transmissible member and a light-reflecting member. The LED chip has a plurality of interconnecting side surfaces having a roughened structure and a plurality of corners. The light-transmissible member covers the side surfaces and the corners and includes a light-transmissible material layer having a breadth value W(A) of a viscosity coefficient (A) range of the light-transmissible material, which satisfies a relation of W(A)?B*D/C: where B represents a thickness of the light-transmissible material layer, represents a thickness of the LED chip measured from the first surface to the second surface, and D represents a roughness of the roughened structure. A method for manufacturing the light emitting device is also provided.Type: GrantFiled: June 26, 2019Date of Patent: May 11, 2021Assignee: Xiamen San'An Optoelectronics Co., Ltd.Inventors: Senpeng Huang, Zhen-duan Lin, Weng-Tack Wong, Junpeng Shi, Shunyi Chen, Chih-Wei Chao, Chen-ke Hsu
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Publication number: 20200303358Abstract: A light-emitting diode (LED) device includes a base plate, an LED chip unit disposed on the base plate, and a light conversion layer disposed on and covering the LED chip unit. The LED chip unit includes a first chip and a second chip. The first chip emits a first excitation light having an emission peak wavelength ranging from 385 nm to 425 nm. The second chip emits a second excitation light having an emission peak wavelength greater than that of the first excitation light. The light conversion layer is configured to convert the first and second excitation lights to excited lights having different emission peak wavelengths, each of which ranges from 440 nm to 700 nm. A mixture of the excited lights is white light.Type: ApplicationFiled: June 11, 2020Publication date: September 24, 2020Inventors: Ping ZHANG, Junpeng SHI, Senpeng HUANG, Zhen-Duan LIN, Shunyi CHEN, Chen-ke HSU
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Publication number: 20200227395Abstract: A LED device includes multiple LED chips each including opposite first and second surfaces, a side surface, and an electrode assembly disposed on the second surface and including first and second electrodes. The first surface of each of the LED chips is a light exit surface. The LED device further includes an electric circuit layer assembly disposed on the second surfaces of the LED chips and having opposite first and second surfaces and a side surface. The first surface is electrically connected to the first and second electrodes. The LED device further includes an encapsulating layer enclosing the LED chips and the electric circuit layer assembly to expose the second surface of the electric circuit layer assembly.Type: ApplicationFiled: January 14, 2020Publication date: July 16, 2020Inventors: Junpeng SHI, Chen-Ke HSU, Chang-Chin YU, Yanqiu LIAO, Zhenduan LIN, Zhaowu HUANG, Senpeng HUANG
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Publication number: 20200203582Abstract: The present invention provides a white light LED package structure and a white light source system, which includes a substrate, an LED chip, and a wavelength conversion material layer. The peak emission wavelength of the LED chip is between 400 nm and 425 nm; the peak emission wavelength of the wavelength conversion material layer is between 440 nm and 700 nm, and the wavelength conversion material layer absorbs light emitted from the LED chip and emits a white light source; and the emission spectrum of the white light source is set as P(?), the emission spectrum of a blackbody radiation having the same color temperature as the white light source is S(?), P(?max) is the maximum light intensity within 380-780 nm, S(?max) is the maximum light intensity of the blackbody radiation within 380-780 nm, D(?) is a difference between the spectrum of the white light LED and the spectrum of the blackbody radiation, and within 510-610 nm, the white light source satisfies: D(?)=P(?)/P(?max)?S(W)/S(?max), ?0.Type: ApplicationFiled: March 5, 2020Publication date: June 25, 2020Inventors: Senpeng HUANG, Junpeng SHI, Weng-Tack WONG, Shunyi CHEN, Zhenduan LIN, Chih-wei CHAO, Chen-ke HSU
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Publication number: 20190319169Abstract: A light emitting device includes an LED chip, a light-transmissible member and a light-reflecting member. The LED chip has a plurality of interconnecting side surfaces having a roughened structure and a plurality of corners. The light-transmissible member covers the side surfaces and the corners and includes a light-transmissible material layer having a breadth value W(A) of a viscosity coefficient (A) range of the light-transmissible material, which satisfies a relation of W(A)?B*D/C: where B represents a thickness of the light-transmissible material layer, represents a thickness of the LED chip measured from the first surface to the second surface, and D represents a roughness of the roughened structure. A method for manufacturing the light emitting device is also provided.Type: ApplicationFiled: June 26, 2019Publication date: October 17, 2019Inventors: Senpeng HUANG, Zhen-duan LIN, Weng-Tack WONG, Junpeng SHI, Shunyi CHEN, Chih-Wei CHAO, Chen-ke HSU
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Patent number: D1009814Type: GrantFiled: September 18, 2020Date of Patent: January 2, 2024Assignee: XIAMEN SAN'AN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Senpeng Huang, Qiuxia Lin, Jian Liu
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Patent number: D1022930Type: GrantFiled: September 18, 2020Date of Patent: April 16, 2024Assignee: QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY CO., LTD.Inventors: Senpeng Huang, Qiuxia Lin, Jian Liu