Abstract: A liquefied gas storage tank of the present disclosure includes: a flat block including a flat primary insulating wall disposed on a flat portion on a first surface or a second surface at different angles forming a storage space for accommodating liquefied gas, the flat primary insulating wall securing a flat primary barrier made of metal and being disposed on the outside of the flat primary barrier, a flat secondary barrier disposed on the outside of the flat primary insulating wall, and a flat secondary insulating wall disposed on the outside of the flat secondary barrier; and a corner block including a corner primary insulating wall disposed in a corner portion where the first surface and the second surface meet, the corner primary insulating wall securing a corner primary barrier made of metal and being disposed on the outside of the corner primary barrier, a corner secondary barrier disposed on the outside of the corner primary insulating wall, and a corner secondary insulating wall disposed on the outsi

Abstract: The present disclosure relates to a liquefied gas storage tank and a ship including the same.

Abstract: A wafer baking apparatus includes a chamber including a processing space, and a wafer heater disposed in the processing space and configured to support a wafer. The wafer heater includes a first heating plate, a heating resistance pattern disposed on a lower surface of the first heating plate, a second heating plate disposed on the first heating plate, and a heat dispersion layer interposed between the first and second heating plates and having thermal conductivity lower than a thermal conductivity of materials of the first and second heating plates.

Abstract: Substrate processing apparatuses and methods of manufacturing a semiconductor device using the same may be provided. A substrate processing apparatus includes a heater in a support plate and comprising a first unit configured to heat a first portion of a substrate and a second unit configured to heat a second portion of a substrate, and processing circuitry configured to heat the heater in a transient section such that the first unit heats the first portion of the substrate to a first heating temperature, and the second unit heats the second portion of the substrate to a second heating temperature different from the first heating temperature, the transient section being a section before a temperature of the substrate reaches a steady state, a steady section being a section after the temperature of the substrate reaches the steady state.

Abstract: A printed circuit board with an embedded bridge includes: a first connection structure including a first insulating film; a bridge disposed on the first connection structure and having one surface, in contact with the first insulating film; and a second connection structure disposed on the first connection structure, and including a second insulating film. The second insulating film covers at least a portion of the other surface of the bridge.

Abstract: A manufacturing apparatus for a semiconductor device, the manufacturing apparatus including a spin chuck configured to fix and rotate a wafer; a nozzle configured to spray a chemical toward the wafer; a lateral displacement sensor configured to measure a displacement variation to a lateral surface of the wafer while the spin chuck is rotating; and a controller configured to control a position of the nozzle by using the displacement variation while the spin chuck is rotating.

Abstract: Disclosed is a stereo matching method of images performed by a system implemented by a computer, including the steps of: receiving a pair of images obtained at different time points; generating a feature map by extracting features of each pixel of the pair of images; generating sequentially cost volumes for partial time points based on the feature map and generating a feature map for the entire disparity by fusing the cost volumes using 2D convolution; and generating a final disparity map by refining the generated feature map.

Abstract: In a method of coating a photoresist, the photoresist may be provided to an upper surface of a rotating wafer. A hovering solution may be injected to an edge portion of the photoresist under a condition that the hovering solution may be hovered with respect to the edge portion of the photoresist with an air layer being interposed between the hovering solution and the edge portion of the photoresist to limit and/or prevent a bead of the photoresist from being formed on an edge portion of the upper surface of the wafer. Thus, the photoresist having a uniform thickness may be coated on the upper surface of the wafer to improve a yield of a semiconductor device by increasing an effective area of the edge portion of the wafer.

Abstract: A photoresist supplying system includes a pump that includes a first tube phragm that stores a photoresist and a filter that filters the photoresist, a second tube phragm that stores the photoresist and is disposed outside the pump, where the second tube phragm transfers the photoresist to the first tube phragm, a storage unit that stores the photoresist, where the storage unit provides the photoresist to the second tube phragm, and a tube phragm drive unit that is connected to the first tube phragm. The tube phragm drive unit adjusts an interior volume of the first tube phragm and applies a pressure to a flexible outer wall of the first tube phragm to transfer the photoresist from the first tube phragm to a nozzle installed in the chamber. At least a part of the photoresist stored in the first tube phragm is transferred to the second tube phragm.

Abstract: A compressor cleaning apparatus to clean a compressor of a gas turbine is provided. The compressor cleaning apparatus includes a nozzle configured to inject a cleaning fluid into an interior of a compressor, a fluid supply tube connected to the nozzle to supply the cleaning fluid to the nozzle, a first cleaning fluid supply connected to the fluid supply tube to supply a first cleaning fluid, and a second cleaning fluid supply connected to the fluid supply tube to supply a second cleaning fluid having a temperature higher than that of the first cleaning fluid.

Abstract: A printed circuit board with an embedded bridge includes: a first connection structure including a first insulating film; a bridge disposed on the first connection structure and having one surface, in contact with the first insulating film; and a second connection structure disposed on the first connection structure, and including a second insulating film. The second insulating film covers at least a portion of the other surface of the bridge.

Abstract: A chemical solution vaporization device includes a chemical solution tank including chemical solution vaporization rooms, a chemical solution sensing room, and a chemical solution supply room. A first internal wall separating the plurality of chemical solution vaporization rooms from each other includes a first opening at a lower portion thereof. A second internal wall separating at least one of the plurality of chemical solution vaporization rooms from the chemical solution supply room includes a second opening at a lower portion thereof. A third internal wall separating at least one of the plurality of chemical solution vaporization rooms from the chemical solution sensing room includes a third opening at a lower portion thereof. And a lower portion of a fourth internal wall separating the chemical solution sensing room from the chemical solution supply room is combined with the lower wall.

Abstract: A substrate processing apparatus includes a substrate support configured to support and rotate a substrate, at least one first lower cleaning nozzle configured to spray a first cleaning liquid on a lower surface of the substrate, at least one second lower cleaning nozzle configured to spray a second cleaning liquid on the lower surface of the substrate, a bowl assembly disposed around the substrate support, the bowl assembly including a cup body providing an annular shaped accommodating space and inner and outer collection portions sequentially arranged in a radial direction in a lower portion of the cup body, an annular shaped discharge guide plate disposed in the receiving space of the bowl assembly under the substrate and extending outwardly from a circumference of the substrate, and a discharge separation plate provided within the receiving space of the bowl assembly to be movable upward and downward.

Abstract: The disclosed technology generally relates to forming a titanium nitride-based thin films, and more particularly to a conformal and smooth titanium nitride-based thin films and methods of forming the same. In one aspect, a method of forming a thin film comprising one or both of TiSiN or TiAlN comprises exposing a semiconductor substrate to one or more vapor deposition cycles at a pressure in a reaction chamber greater than 1 torr, wherein a plurality of the vapor deposition cycles comprises an exposure to a titanium (Ti) precursor, an exposure to a nitrogen (N) precursor and an exposure to one or both of a silicon (Si) precursor or an aluminum (Al) precursor.

Abstract: Disclosed is a stereo matching method of images performed by a system implemented by a computer, including the steps of: receiving a pair of images obtained at different time points; generating a feature map by extracting features of each pixel of the pair of images; generating sequentially cost volumes for partial time points based on the feature map and generating a feature map for the entire disparity by fusing the cost volumes using 2D convolution; and generating a final disparity map by refining the generated feature map.

Abstract: Disclosed are a method and an apparatus for processing a blurred image. The method for processing a blurred image includes the steps of generating a first input feature map and a second input feature map with a feature distribution for blur removal from the blurred image, generating a prediction feature map from the first input feature map by using a self-spatial feature transform (SSFT) module which transforms the feature distribution for blur removal into a feature distribution for face recognition without external information, and generating a deblurred image based on the second input feature map and the prediction feature map.

Abstract: A wafer processing apparatus is provided. The apparatus includes: a heating plate through which vacuum ports are formed; a plurality of temperature sensors; a heating device configured to heat the heating plate; first and second power supplies; temperature controllers to generate first and second feedback temperature control signals for controlling power output power supplies based on measurement values generated by the temperature sensors; an electronic pressure regulator configured to provide vacuum pressure for fixing a wafer to the plurality of vacuum ports; and a wafer chucking controller configured to control the electronic pressure regulator, and generate a feedback pressure control signal for controlling the electronic pressure regulator based on the first and second feedback temperature control signals.

Abstract: Disclosed is a device and method for monitoring a common mode voltage. There is provided the device for monitoring a common mode voltage including an input end connected to a node between an energy storage device and a power conversion device, a voltage divider that divides a voltage applied to the input end, a comparator that compares an output of the voltage divider and a reference voltage, and a controller that detects an abnormality in a voltage applied from the power conversion device to the energy storage device based on an output of the comparator.

Abstract: Disclosed is a terminating resistance setting circuit and a battery management system in a battery system including a plurality of battery modules, the battery management system including at least module controllers that respectively control the plurality of battery modules, in which the module controllers communicate with each other through a differential input mode, and each of a plurality of battery modules includes a terminating resistance setting circuit including a resistance generation unit connected between a pair of communication lines for differential input to generate a terminating resistance, a first control circuit that applies a first control signal to the resistance generation unit, and a second control circuit formed between the resistance generation unit and a reference potential and controlled to apply a voltage according to the reference potential to the resistance generation unit by a second control signal.

Abstract: The disclosed technology generally relates to forming a titanium nitride-based thin films, and more particularly to a conformal and smooth titanium nitride-based thin films and methods of forming the same. In one aspect, a method of forming a thin film comprising one or both of TiSiN or TiAlN comprises exposing a semiconductor substrate to one or more vapor deposition cycles at a pressure in a reaction chamber greater than 1 torr, wherein a plurality of the vapor deposition cycles comprises an exposure to a titanium (Ti) precursor, an exposure to a nitrogen (N) precursor and an exposure to one or both of a silicon (Si) precursor or an aluminum (Al) precursor.