Abstract: The present disclosure relates to a porous nanoparticle-based radiative cooling material and a radiative cooling device using the same. The porous nanoparticle-based radiative cooling material according to one embodiment of the present disclosure includes a plurality of porous nanoparticles and binder molecules, wherein the porous nanoparticles reflect incident sunlight and absorb and radiate mid-infrared light, pores are included inside dielectric particles, reflectance for the incident sunlight and mid-infrared emissivity are increased based on the pores, and a laminated structure distribution is formed by the binder molecules.

Abstract: A semiconductor device includes an active pattern which includes a lower pattern, and a sheet pattern that is spaced apart from the lower pattern in a first direction, a gate structure on the lower pattern that includes a gate electrode that surrounds the sheet pattern, the gate electrode extending in a second direction that is perpendicular to the first direction, and a source/drain pattern on the lower pattern and in contact with the sheet pattern. A contact surface between the sheet pattern and the source/drain pattern has a first width in the second direction, and the sheet pattern has a second width in the second direction that is greater than the first width.

Abstract: The present disclosure provides a display device for inspecting image data that may include a data processing device configured to generate first cyclic redundancy check (CRC) data for a partial area among areas of image data included in a first frame to transmit the image data of the first frame and the first CRC data and a data driving device configured to receive the image data of the first frame and the first CRC data from the data processing device to generate second CRC data for a partial area among areas of the image data included in the first frame on the basis of the image data of the first frame and to compare the first CRC data with the second CRC data to determine whether there is an error in the partial area among areas of the image data included in the first frame.

Abstract: A semiconductor device includes a multi-channel active pattern, a plurality of gate structures on the multi-channel active pattern and spaced apart from each other in a first direction, the plurality of gate structures including a gate electrode that extends in a second direction different from the first direction, a source/drain recess between the adjacent gate structures, and a source/drain pattern on the multi-channel active pattern in the source/drain recess, wherein the source/drain pattern includes: a semiconductor liner layer including silicon-germanium and extending along the source/drain recess, a semiconductor filling layer including silicon-germanium on the semiconductor liner layer, and at least one or more semiconductor insertion layers between the semiconductor liner layer and the semiconductor filling layer, and wherein the at least one or more semiconductor insertion layers have a saddle structure.