Patents by Inventor Seok Jong HYUN

Seok Jong HYUN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing semiconductor device using the same
    Patent number: 9269568
    Abstract: Provided are a deposition apparatus and a method of manufacturing a semiconductor device. In the method, a reaction chamber provided with a gaseous source supply unit and a liquid source supply unit is prepared, and an etch stop layer is formed on a substrate by using a gaseous source. Then, an interlayer insulation layer is formed on the etch stop layer by using a vaporized liquid source and a vaporized dopant source. In this way, the etch stop layer and the interlayer insulation layer are formed in-situ in the same reaction chamber.
    Type: Grant
    Filed: July 3, 2014
    Date of Patent: February 23, 2016
    Assignee: WONIK IPS CO., LTD
    Inventors: Young Soo Kwon, Kyoung Pil Na, Seok Jong Hyun
  • METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
    Publication number: 20140322920
    Abstract: Provided are a deposition apparatus and a method of manufacturing a semiconductor device. In the method, a reaction chamber provided with a gaseous source supply unit and a liquid source supply unit is prepared, and an etch stop layer is formed on a substrate by using a gaseous source. Then, an interlayer insulation layer is formed on the etch stop layer by using a vaporized liquid source and a vaporized dopant source. In this way, the etch stop layer and the interlayer insulation layer are formed in-situ in the same reaction chamber.
    Type: Application
    Filed: July 3, 2014
    Publication date: October 30, 2014
    Inventors: Young Soo KWON, Kyoung Pil NA, Seok Jong HYUN
  • DEPOSITION APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
    Publication number: 20110021035
    Abstract: Provided are a deposition apparatus and a method of manufacturing a semiconductor device. In the method, a reaction chamber provided with a gaseous source supply unit and a liquid source supply unit is prepared, and an etch stop layer is formed on a substrate by using a gaseous source. Then, an interlayer insulation layer is formed on the etch stop layer by using a vaporized liquid source and a vaporized dopant source. In this way, the etch stop layer and the interlayer insulation layer are formed in-situ in the same reaction chamber.
    Type: Application
    Filed: July 23, 2010
    Publication date: January 27, 2011
    Applicant: ATTO CO., LTD.
    Inventors: Young Soo KWON, Kyoung Pil NA, Seok Jong HYUN
  • Transfer robot
    Patent number: D1025167
    Type: Grant
    Filed: April 28, 2023
    Date of Patent: April 30, 2024
    Inventors: Han Wool Choi, Jun Hwan Park, Seok Young Youn, Hun Keon Ko, Ho Seong Kang, Hyeon Jeong An, Gyu Jong Hwang, Soo Kyoung Kang, Dong Jin Hyun, Geun Sang Yu
  • Transfer robot
    Patent number: D1025168
    Type: Grant
    Filed: April 28, 2023
    Date of Patent: April 30, 2024
    Inventors: Han Wool Choi, Jun Hwan Park, Seok Young Youn, Hun Keon Ko, Ho Seong Kang, Hyeon Jeong An, Gyu Jong Hwang, Soo Kyoung Kang, Dong Jin Hyun, Geun Sang Yu