Patents by Inventor Seok-Jun Seo

Seok-Jun Seo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR MATERIALS, TRANSISTORS INCLUDING THE SAME, AND ELECTRONIC DEVICES INCLUDING TRANSISTORS
    Publication number: 20140152936
    Abstract: According to example embodiments, a semiconductor material may include zinc, nitrogen, and fluorine. The semiconductor material may further include oxygen. The semiconductor material may include a compound. For example, the semiconductor material may include zinc fluorooxynitride. The semiconductor material may include zinc oxynitride containing fluorine. The semiconductor material may include zinc fluoronitride. The semiconductor material may be applied as a channel material of a thin film transistor (TFT).
    Type: Application
    Filed: November 29, 2013
    Publication date: June 5, 2014
    Applicants: SAMSUNG DISPLAY CO., LTD., SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Tae-sang KIM, Sun-jae KIM, Hyun-suk KIM, Myung-kwan RYU, Joon-seok PARK, Seok-jun SEO, Jong-baek SEON, Kyoung-seok SON
  • SEMICONDUCTOR MATERIALS, TRANSISTORS INCLUDING THE SAME, AND ELECTRONIC DEVICES INCLUDING TRANSISTORS
    Publication number: 20140151690
    Abstract: According to example embodiments, a semiconductor material may include zinc, nitrogen, and fluorine. The semiconductor material may further include oxygen. The semiconductor material may include a compound. For example, the semiconductor material may include zinc fluorooxynitride. The semiconductor material may include zinc oxynitride containing fluorine. The semiconductor material may include zinc fluoronitride. The semiconductor material may be applied as a channel material of a thin film transistor (TFT).
    Type: Application
    Filed: November 29, 2013
    Publication date: June 5, 2014
    Applicants: SAMSUNG DISPLAY CO., LTD., SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Tae-sang KIM, Sun-jae KIM, Hyun-suk KIM, Myung-kwan RYU, Joon-seok PARK, Seok-jun SEO, Jong-baek SEON, Kyoung-seok SON
  • OXYNITRIDE CHANNEL LAYER, TRANSISTOR INCLUDING THE SAME AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20140001464
    Abstract: A transistor includes a channel layer including an oxynitride semiconductor doped with at least one of hafnium (Hf) and zirconium (Zr), a source on one side portion of the channel layer and a drain on another side portion of the channel layer, a gate corresponding to the channel layer, and a gate insulation layer between the channel layer and the gate.
    Type: Application
    Filed: February 19, 2013
    Publication date: January 2, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Joon-seok PARK, Sun-jae KIM, Tae-sang KIM, Hyun-suk KIM, Myung-kwan RYU, Seok-jun SEO, Jong-baek SEON, Kyoung-seok SON, Sang-yoon LEE
  • TRANSISTOR HAVING SULFUR-DOPED ZINC OXYNITRIDE CHANNEL LAYER AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20130306966
    Abstract: Transistors having sulfur-doped zinc oxynitride channel layers, and methods of manufacturing the same, include a ZnON channel layer with sulfur content ratio with respect to a zinc content of from about 0.1 at % to about 1.2 at %, a source electrode and a drain electrode respectively formed on a first region and a second region of the channel layer, a gate electrode corresponding to the channel layer, and a gate insulation layer between the channel layer and the gate electrode.
    Type: Application
    Filed: December 20, 2012
    Publication date: November 21, 2013
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jong-baek SEON, Tae-sang KIM, Hyun-suk KIM, Myung-kwan RYU, Joon-seok PARK, Seok-jun SEO, Kyoung-seok SON, Sang-yoon LEE
  • TRANSISTORS, METHODS OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICES INCLUDING TRANSISTORS
    Publication number: 20130140551
    Abstract: A transistor may include a channel layer formed of an oxide semiconductor. The oxide semiconductor may include GaZnON, and a proportion of Ga content to a total content of Ga and Zn of the channel layer is about 0.5 to about 4.5 at %.
    Type: Application
    Filed: July 17, 2012
    Publication date: June 6, 2013
    Applicants: SAMSUNG MOBILE DISPLAY CO., LTD, SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Joon-seok Park, Tae-sang Kim, Hyun-suk Kim, Myung-kwan Ryu, Jong-baek Seon, Kyoung-seok Son, Sang-yoon Lee, Seok-jun Seo
  • THIN-FILM TRANSISTOR ARRAY PANEL AND METHOD OF FABRICATING THE SAME
    Publication number: 20100308326
    Abstract: A thin-film transistor array panel includes: an insulating substrate; an oxide semiconductor layer that is formed on the insulating substrate and includes a metal inorganic salt and zinc acetate; a gate electrode overlapping with the oxide semiconductor layer; a gate insulating film that is interposed between the oxide semiconductor layer and the gate electrode; and a source electrode and a drain electrode that at least partially overlap the oxide semiconductor layer and are separated from each other.
    Type: Application
    Filed: May 28, 2010
    Publication date: December 9, 2010
    Applicants: Samsung Electronics Co., Ltd., Korea Advanced Institute of Science and Technology
    Inventors: Young-Min KIM, Bo-Sung Kim, Yeon-Taek Jeong, Tae-Young Choi, Seon-Pil Jang, Seung-Hwan Cho, Bo-Kyoung Ahn, Byeong-Soo Bae, Seok-Jun Seo