Patents by Inventor Seok Min Hwang
Seok Min Hwang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11996567Abstract: A battery module includes a plurality of secondary battery cells, a housing member accommodating a plurality of the secondary battery cells therein, and an insulating member disposed on an inner surface of the housing member, preventing flow of electrical current to the housing member, having a heat transfer function to discharge heat of the secondary battery cell externally, and formed to have a predetermined thickness.Type: GrantFiled: November 23, 2020Date of Patent: May 28, 2024Assignee: SK ON CO., LTD.Inventors: Myeong Hwan Ma, Seok Min Kim, Seo Roh Rhee, Hae Ryong Jeon, Seung Hoon Ju, Yang Kyu Choi, Dong Ha Hwang
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Patent number: 11745751Abstract: A vehicle and a method of managing a user setting menu (USM) enables the vehicle to add a new function after production of the vehicle so as to effectively manage the USM. The method includes: acquiring, by a conversion controller, first setting information about at least one existing function from a system controller through a first network using a first protocol; converting, by the conversion controller, the first setting information into second setting information using a second protocol; transmitting the converted second setting information to a head unit controller to manage the USM through a second network; transmitting third setting information about a one new function from a connectivity controller to the head unit controller through the second network, and updating, by the head unit controller, the USM based on the second and third setting information.Type: GrantFiled: November 21, 2019Date of Patent: September 5, 2023Assignees: HYUNDAI MOTOR COMPANY, KIA MOTORS CORPORATIONInventors: Seok Min Hwang, Yong Jin Shin
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Publication number: 20200391759Abstract: A vehicle and a method of managing a user setting menu (USM) enables the vehicle to add a new function after production of the vehicle so as to effectively manage the USM. The method includes: acquiring, by a conversion controller, first setting information about at least one existing function from a system controller through a first network using a first protocol; converting, by the conversion controller, the first setting information into second setting information using a second protocol; transmitting the converted second setting information to a head unit controller to manage the USM through a second network; transmitting third setting information about a one new function from a connectivity controller to the head unit controller through the second network, and updating, by the head unit controller, the USM based on the second and third setting information.Type: ApplicationFiled: November 21, 2019Publication date: December 17, 2020Applicants: HYUNDAI MOTOR COMPANY, KIA MOTORS CORPORATIONInventors: Seok Min HWANG, Yong Jin SHIN
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Publication number: 20200185368Abstract: The present invention relates to an LED display device and a method for manufacturing the same. A manufacturing method, according to one embodiment of the present invention, comprises the steps of: growing a semiconductor layer on a growth substrate; forming an LED element in an asymmetrical shape from which the semiconductor layer is separated; separating the LED element from the growth substrate; forming a bonding electrode, to which the LED element is bonded, on a display substrate comprising a TFT; forming a groove by patterning the display substrate in the same shape as the LED element formed asymmetrically; seating the LED element in a pattern having the groove in the same shape as the LED element by means of a physical force; and electrically connecting by the bonding electrode of the display substrate or an adhesive conductive material formed on a bonding electrode of the LED element.Type: ApplicationFiled: February 15, 2020Publication date: June 11, 2020Inventor: Seok Min HWANG
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Patent number: 9899584Abstract: A semiconductor device includes a light emitting structure, and an interconnection bump including an under bump metallurgy (UBM) layer disposed on an electrode of at least one of the first and second conductivity-type semiconductor layers, and having a first surface disposed opposite to a surface of the electrode and a second surface extending from an edge of the first surface to be connected to the electrode, an intermetallic compound (IMC) disposed on the first surface of the UBM layer, a solder bump bonded to the UBM layer with the IMC therebetween, and a barrier layer disposed on the second surface of the UBM layer and substantially preventing the solder bump from being diffused into the second surface of the UBM layer.Type: GrantFiled: December 29, 2016Date of Patent: February 20, 2018Assignee: Samsung Electronics Co., Ltd.Inventor: Seok Min Hwang
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Publication number: 20170110639Abstract: A semiconductor device includes a light emitting structure, and an interconnection bump including an under bump metallurgy (UBM) layer disposed on an electrode of at least one of the first and second conductivity-type semiconductor layers, and having a first surface disposed opposite to a surface of the electrode and a second surface extending from an edge of the first surface to be connected to the electrode, an intermetallic compound (IMC) disposed. on the first surface of the UBM layer, a solder bump bonded to the UBM layer with the IMC therebetween, and a barrier layer disposed on the second surface of the UBM layer and substantially preventing the solder bump from being diffused into the second surface of the UBM layer.Type: ApplicationFiled: December 29, 2016Publication date: April 20, 2017Applicant: Samsung Electronics Co., Ltd.Inventor: Seok Min Hwang
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Patent number: 9583687Abstract: A semiconductor device includes a light emitting structure, and an interconnection bump including an under bump metallurgy (UBM) layer disposed on an electrode of at least one of the first and second conductivity-type semiconductor layers, and having a first surface disposed opposite to a surface of the electrode and a second surface extending from an edge of the first surface to be connected to the electrode, an intermetallic compound (IMC) disposed on the first surface of the UBM layer, a solder bump bonded to the UBM layer with the IMC therebetween, and a barrier layer disposed on the second surface of the UBM layer and substantially preventing the solder bump from being diffused into the second surface of the UBM layer.Type: GrantFiled: June 3, 2015Date of Patent: February 28, 2017Assignee: Samsung Electronics Co., Ltd.Inventor: Seok Min Hwang
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Patent number: 9379288Abstract: There is provided a semiconductor light emitting device comprising a semiconductor stack having first and second main surfaces opposing each other, and comprising first and second conductivity-type semiconductor layers respectively defining the first and second main surfaces, and an active layer interposed between the first and second conductivity-type semiconductor layers; a plurality of contact holes penetrating the second conductivity-type semiconductor layer and the active layer, and one region of the first conductivity-type semiconductor layer; a first electrode layer disposed on the second main surface of the semiconductor stack, the first electrode layer extending and being connected to the one region of the first conductivity-type semiconductor layer through the contact holes; a second electrode layer disposed between the semiconductor stack and the first electrode layer and connected to the second conductivity-type semiconductor layer; and first and second interconnected bumps.Type: GrantFiled: February 5, 2015Date of Patent: June 28, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Pun Jae Choi, Jae In Sim, Seok Min Hwang, Jin Hyun Lee, Myong Soo Cho, Ki Yeol Park
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Publication number: 20160133807Abstract: A semiconductor device includes a light emitting structure, and an interconnection bump including an under bump metallurgy (UBM) layer disposed on an electrode of at least one of the first and second conductivity-type semiconductor layers, and having a first surface disposed opposite to a surface of the electrode and a second surface extending from an edge of the first surface to be connected to the electrode, an intermetallic compound (IMC) disposed on the first surface of the UBM layer, a solder bump bonded to the UBM layer with the IMC therebetween, and a barrier layer disposed on the second surface of the UBM layer and substantially preventing the solder bump from being diffused into the second surface of the UBM layer.Type: ApplicationFiled: June 3, 2015Publication date: May 12, 2016Inventor: Seok Min HWANG
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Publication number: 20150317233Abstract: An apparatus and a method for maximizing debugging performance and reducing memory overhead are provided. The method includes generating a debug protocol packet and transmitting the generated debug protocol packet to a diagnostic device. The debug protocol packet includes reference information for at least one string associated with a debug trace.Type: ApplicationFiled: April 29, 2015Publication date: November 5, 2015Inventors: Vrind TUSHAR, Raju Udava SIDDAPPA, Venkata Raju INDUKURI, Dae-Sop PARK, Jae-Kyu LEE, Sang-Il CHOI, Seok-Min HWANG
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Patent number: 9130125Abstract: A semiconductor light emitting device may include an n-type semiconductor layer, an active layer and a p-type semiconductor layer disposed in a first region corresponding to a portion of an upper surface of the n-type semiconductor layer, an n-type electrode formed in a second region distinct from the first region on the n-type semiconductor layer to be electrically connected to the n-type semiconductor layer and including an n-type electrode pad and first and second n-type electrode fingers, and a p-type electrode formed on the p-type semiconductor layer to be electrically connected to the p-type semiconductor layer and including a p-type electrode pad and a p-type electrode finger. A distance between n-type and p-type electrodes may be constant to significantly reduce a phenomenon of concentration of a current in a specific region of an electrode.Type: GrantFiled: August 17, 2011Date of Patent: September 8, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Seok Min Hwang, Hae Soo Ha, Jae Yoon Kim, Jae Ho Han
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Patent number: 9105762Abstract: A semiconductor light emitting device includes: a light emission structure in which a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer are sequentially stacked; a first electrode formed on the first conductive semiconductor layer; an insulating layer formed on the second conductive semiconductor layer and made of a transparent material; a reflection unit formed on the insulating layer and reflecting light emitted from the active layer; a second electrode formed on the reflection unit; and a transparent electrode formed on the second conductive semiconductor layer, the transparent electrode being in contact with the insulating layer and the second electrode.Type: GrantFiled: January 28, 2015Date of Patent: August 11, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jae Yoon Kim, Jin Bock Lee, Seok Min Hwang, Su Yeol Lee
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Publication number: 20150221843Abstract: There is provided a semiconductor light emitting device comprising a semiconductor stack having first and second main surfaces opposing each other, and comprising first and second conductivity-type semiconductor layers respectively defining the first and second main surfaces, and an active layer interposed between the first and second conductivity-type semiconductor layers; a plurality of contact holes penetrating the second conductivity-type semiconductor layer and the active layer, and one region of the first conductivity-type semiconductor layer; a first electrode layer disposed on the second main surface of the semiconductor stack, the first electrode layer extending and being connected to the one region of the first conductivity-type semiconductor layer through the contact holes; a second electrode layer disposed between the semiconductor stack and the first electrode layer and connected to the second conductivity-type semiconductor layer; and first and second interconnected bumps.Type: ApplicationFiled: February 5, 2015Publication date: August 6, 2015Inventors: Pun Jae CHOI, Jae In SIM, Seok Min HWANG, Jin Hyun LEE, Myong Soo CHO, Ki Yeol PARK
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Publication number: 20150140707Abstract: A semiconductor light emitting device includes: a light emission structure in which a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer are sequentially stacked; a first electrode formed on the first conductive semiconductor layer; an insulating layer formed on the second conductive semiconductor layer and made of a transparent material; a reflection unit formed on the insulating layer and reflecting light emitted from the active layer; a second electrode formed on the reflection unit; and a transparent electrode formed on the second conductive semiconductor layer, the transparent electrode being in contact with the insulating layer and the second electrode.Type: ApplicationFiled: January 28, 2015Publication date: May 21, 2015Inventors: Jae Yoon KIM, Jin Bock LEE, Seok Min HWANG, Su Yeol LEE
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Patent number: 8969895Abstract: A semiconductor light emitting device includes: a light emission structure in which a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer are sequentially stacked; a first electrode formed on the first conductive semiconductor layer; an insulating layer formed on the second conductive semiconductor layer and made of a transparent material; a reflection unit formed on the insulating layer and reflecting light emitted from the active layer; a second electrode formed on the reflection unit; and a transparent electrode formed on the second conductive semiconductor layer, the transparent electrode being in contact with the insulating layer and the second electrode.Type: GrantFiled: September 6, 2011Date of Patent: March 3, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Jae Yoon Kim, Jin Bock Lee, Seok Min Hwang, Su Yeol Lee
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Publication number: 20140231859Abstract: A semiconductor light emitting device may include: a light emitting structure including an n-type semiconductor layer, a p-type semiconductor layer, and an active layer interposed therebetween; a first electrode connected to one of the n-type semiconductor layer and the p-type semiconductor layer; and a second electrode connected to the other of the n-type semiconductor layer and the p-type semiconductor layer. The first electrode may include a first electrode pad disposed in a central portion of one side of the light emitting structure and first to third branch electrodes connected to the first electrode pad, having a fork shape. The second electrode may include second and third electrode pads disposed separately in both corners of the other side opposing the one side and fourth to seventh branch electrodes connected thereto. The fourth and seventh branch electrodes may extend in an interdigitated manner between the first to third branch electrodes.Type: ApplicationFiled: August 1, 2011Publication date: August 21, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jae Yoon Kim, Seok Min Hwang, Su Yeol Lee, Seung Wan Chae, Jae Ho Han, Jin Bock Lee
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Publication number: 20140197374Abstract: There is provided a method of manufacturing a nitride semiconductor light emitting device, the method including: forming a light emitting structure on a substrate, the light emitting structure including first and second conductivity-type nitride semiconductor layers with an active layer interposed therebetween; forming a first conductivity-type nitride semiconductor layer, an active layer and a second conductivity-type nitride semiconductor layer sequentially stacked on a substrate; forming a first electrode to be connected to the first conductivity-type nitride semiconductor layer; forming a photoresist film on the second conductivity-type nitride semiconductor layer to expose a portion of the second conductivity-type nitride semiconductor layer; and forming a reflective metal layer and a barrier metal layer as a second electrode consecutively on the portion of the second conductivity-type nitride semiconductor layer exposed by the photoresist film and removing the photoresist film.Type: ApplicationFiled: August 17, 2011Publication date: July 17, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Seok Min Hwang, Jin Bock Lee, Tae Sung Jang, Jong Gun Woo
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Publication number: 20140191194Abstract: There is provided a nitride semiconductor light emitting device, capable of improving light extraction efficiency through a texture effect and including: a light emitting structure formed on a substrate and including a first conductivity-type nitride semiconductor layer and a second conductivity-type nitride semiconductor layer with an active layer interposed therebetween; a first electrode electrically connected to the first conductivity-type nitride semiconductor layer; a second electrode electrically connected to the second conductivity-type nitride semiconductor layer; and a light extraction pattern disposed between the first electrode and the second electrode and including a plurality of through holes formed by vertically penetrating the light emitting structure.Type: ApplicationFiled: August 9, 2011Publication date: July 10, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Seok Min Hwang, Jae Ho Han, Jae Yoon Kim, Hae Soo Ha, Su Yeol Lee, Je Won Kim
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Publication number: 20140175503Abstract: A semiconductor light emitting device may include an n-type semiconductor layer, an active layer and a p-type semiconductor layer disposed in a first region corresponding to a portion of an upper surface of the n-type semiconductor layer, an n-type electrode formed in a second region distinct from the first region on the n-type semiconductor layer to be electrically connected to the n-type semiconductor layer and including an n-type electrode pad and first and second n-type electrode fingers, and a p-type electrode formed on the p-type semiconductor layer to be electrically connected to the p-type semiconductor layer and including a p-type electrode pad and a p-type electrode finger. A distance between n-type and p-type electrodes may be constant to significantly reduce a phenomenon of concentration of a current in a specific region of an electrode.Type: ApplicationFiled: August 17, 2011Publication date: June 26, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Seok Min Hwang, Hae Soo Ha, Jae Yoon Kim, Jae Ho Han
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Patent number: 8735923Abstract: There is provided a semiconductor light emitting device and method of making the same, having a first conductivity type semiconductor layer; an active layer formed on the first conductivity type semiconductor layer; a second conductivity type semiconductor layer formed on the active layer and including a plurality of holes; and a transparent electrode formed on the second conductivity type semiconductor layer.Type: GrantFiled: October 3, 2011Date of Patent: May 27, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Tae Sung Jang, Seok Min Hwang, Su Yeol Lee, Jong Gun Woo