Abstract: An organic light emitting device (OLED) is formed by assembling a first substrate and a second substrate. The second substrate includes several sub-pixels. The first substrate includes several transistors electrically connected to each other and, for each subpixel, a first connecting electrode electrically connected to one of the transistors. Each subpixel includes a light-emitting region and a non light-emitting region. A second connecting electrode is formed in the non light-emitting region and electrically connected to the respective first connecting electrode.

Abstract: An organic light emitting device is formed by assembling a first substrate and a second substrate. The second substrate includes several sub-pixels. The first substrate includes several transistors and, for each subpixel, a first connecting electrode. The transistors are electrically connected to each other, and the first connecting electrode is electrically connected to the respective one of the transistors. Each sub-pixel includes a light-emitting region and a non light-emitting region. A second connecting electrode is formed within the non light-emitting region and projects toward the first substrate. The first and second substrates are electrically connected via the connection of the first and second connecting electrodes.

Abstract: A semiconductor device, comprising a substrate, a semiconductive layer and a gate electrode is provided. The semiconductive layer having a crystallization promoting material is formed over the substrate. The semiconductive layer has a channel region, a first doped region and a second doped region. The first doped region has a donor and an acceptor, and the second doped region has a dopant which is selected from one of the donor and the acceptor. The second doped region is disposed between the first doped region and the channel region. The gate electrode is insulated from the channel region.

Abstract: A semiconductor device, comprising a substrate, a semiconductive layer and a gate electrode is provided. The semiconductive layer having a crystallization promoting material is formed over the substrate. The semiconductive layer has a channel region, a first doped region and a second doped region. The first doped region has a donor and an acceptor, and the second doped region has a dopant which is selected from one of the donor and the acceptor. The second doped region is disposed between the first doped region and the channel region. The gate electrode is insulated from the channel region.

Abstract: A display device and its method of manufacture. The display device is formed to include a substrate having an upper surface, a recess region having a bottom surface and sidewalls, a light-emitting element and a switch element. The light-emitting element includes a first electrode disposed on the recess region, a light-emitting layer disposed on the first electrode, and a second electrode disposed on the light-emitting layer. The switch element is disposed on the substrate and electrically connected to the light-emitting element. The bottom surface of the recess region is lower than the bottom surface of the active layer.

Abstract: A display device and its method of manufacture. The display device is formed to include a substrate having an upper surface, a recess region having a bottom surface and sidewalls, a light-emitting element and a switch element. The light-emitting element includes a first electrode disposed on the recess region, a light-emitting layer disposed on the first electrode, and a second electrode disposed on the light-emitting layer. The switch element is disposed on the substrate and electrically connected to the light-emitting element. The bottom surface of the recess region is lower than the bottom surface of the active layer.

Abstract: A display device and a method of manufacturing the same are provided. The display device comprises a substrate, a light-emitting element and a switch element. The substrate has a substrate upper surface and a recess region lower than the substrate upper surface. The light-emitting element comprises a first electrode, a light-emitting layer and a second electrode. The first electrode is disposed on the recess region. The light-emitting layer is disposed on the first electrode. The second electrode is disposed on the light-emitting layer. The switch element is disposed on the substrate upper surface and electrically connected to the light-emitting element.

Abstract: An organic light emitting device is formed by assembling a first substrate and a second substrate. The second substrate includes several sub-pixels. The first substrate includes several transistors and, for each subpixel, a first connecting electrode. The transistors are electrically connected to each other, and the first connecting electrode is electrically connected to the respective one of the transistors. Each sub-pixel includes a light-emitting region and a non light-emitting region. A second connecting electrode is formed within the non light-emitting region and projects toward the first substrate. The first and second substrates are electrically connected via the connection of the first and second connecting electrodes.

Abstract: An organic light emitting device (OLED) is formed by assembling a first substrate and a second substrate. The second substrate includes several sub-pixels. The first substrate includes several transistors electrically connected to each other and, for each subpixel, a first connecting electrode electrically connected to one of the transistors. Each subpixel includes a light-emitting region and a non light-emitting region. A second connecting electrode is formed in the non light-emitting region and electrically connected to the respective first connecting electrode.

Abstract: The present invention relates to a structure and a fabrication method of a storage capacitor used in the pixel region of a display panel such as LCD or OELD. The present invention simultaneously forms a poly-crystalline silicon TFT and a storage capacitor in the pixel region of a display panel using MILC phenomena. By applying MILC inducing metal along at least two edges of storage capacitor, the time required to crystallize the silicon layer in storage capacitor region may be significantly reduced.

Abstract: The present invention relates to a method and apparatus for fabricating a thin film transistor including a crystalline silicon active layer. According to the method of the present invention, there are advantages in that processing time and production costs can be reduced since a series of processes of fabricating the thin film transistor, such as deposition of source metal, thermal annealing for crystallization, and deposition of an insulating layer or a wiring metal layer, can be consecutively performed in one apparatus.

Abstract: The present invention relates to a method for crystallizing the active layer of a thin film transistor utilizing crystal filtering technique. According to the conventional metal induced lateral crystallization (MILC) method, amorphous silicon layer can be crystallized into poly-crystal silicon layer. According the crystal filtering technique of the present invention, amorphous silicon layer can be single-crystallized by filtering a single crystal component from the poly-crystal region being crystallized by MILC. The TFT fabricated including an active layer crystallized according to the present method has significantly improved electrical characteristics such as electron mobility and leakage current as compared to the TFT including a poly-crystal silicon active layer made by conventional methods. The invention also provides various TFT fabrication methods applying the crystal filtering technique.

Abstract: A thin film transistor (TFT) including a polycrystalline active layer and a method for making the same are disclosed. An amorphous silicon layer is deposited on a substrate and is crystallized by using MILC (metal induced lateral crystallization) to provide a poly-silicon active layer of the TFT. Specifically, the amorphous silicon layer is poly-crystallized during a thermal treatment of the active layer. The thermal treatment causes the MILC of the active layer propagating from portions of the source and the drain regions on which MILC source metal is formed through the contact holes of the TFT.

Abstract: The present invention relates to a method for crystallizing the active layer of a thin film transistor utilizing crystal filtering technique. According to the conventional metal induced lateral crystallization (MILC) method, amorphous silicon layer can be crystallized into poly-crystal silicon layer. According the crystal filtering technique of the present invention, amorphous silicon layer can be single-crystallized by filtering a single crystal component from the poly-crystal region being crystallized by MILC. The TFT fabricated including an active layer crystallized according to the present method has significantly improved electrical characteristics such as electron mobility and leakage current as compared to the TFT including a poly-crystal silicon active layer made by conventional methods. The invention also provides various TFT fabrication methods applying the crystal filtering technique.

Abstract: A thin film transistor (TFT) including a polycrystalline active layer and a method for making the same are disclosed. An amorphous silicon layer is deposited on a substrate and is crystallized by using MJLC (metal induced lateral crystallization) to provide a poly-silicon active layer of the TFT. Specifically, the amorphous silicon layer is poly-crystallized during a thermal treatment of the active layer. The thermal treatment causes the MILC of the active layer propagating from portions of the source and the drain regions on which MILC source metal is formed through the contact holes of the TFT.

Abstract: The invention provides a method for fabricating a TFT including a crystalline silicon active layer. The inventive method forms a metal offset region between the metal layer used to induce the cystallization of the active layer and the channel region of the TFT without introducing an additional process such as photoresist processing. Therefore, the inventive method improves the performance and manufacturing productivity of TFT and lower its production cost as well.

Abstract: The present invention relates to a crystalline silicon TFT panel for LCD and a method of fabricating the same. According to the present invention, a pixel transistor and a storage capacitor, which include a crystalline silicon thin film, are formed at a pixel region of the TFT panel using MILC, and a low-concentration doped region having an impurity concentration of 1E14/cm2 or less is simultaneously formed around the channel region of the pixel transistor so as to effectively lower an off current of the pixel transistor. Thus, the present invention has an advantage in that semiconductor devices required in the pixel region and the driving circuit region of the TFT panel for LCD can be simultaneously fabricated through a relatively simple process, and thus, an off current characteristic and an on current characteristic that are required in the pixel region and the driving circuit region, respectively, can be simultaneously satisfied.

Abstract: The present invention relates to a structure and a fabrication method of a storage capacitor used in the pixel region of a display panel such as LCD or OELD. The present invention simultaneously forms a poly-crystalline silicon TFT and a storage capacitor in the pixel region of a display panel using MILC phenomena. By applying MILC inducing metal along at least two edges of storage capacitor, the time required to crystallize the silicon layer in storage capacitor region may be significantly reduced.

Abstract: The present invention relates to a crystalline silicon TFT panel for LCD and a method of fabricating the same. According to the present invention, a pixel transistor and a storage capacitor, which include a crystalline silicon thin film, are formed at a pixel region of the TFT panel using MILC, and a driving transistor is also formed at a driving circuit region of the TFT panel. Furthermore, two or more gate electrodes are formed at the pixel transistor so as to effectively lower an off current of the pixel transistor. Thus, the present invention has an advantage in that semiconductor devices required in the pixel region and the driving circuit region of the TFT panel for LCD can be simultaneously fabricated through a relatively simple process, and thus, an off current characteristic and an on current characteristic that are required in the pixel region and the driving circuit region, respectively, can be simultaneously satisfied.

Abstract: The present invention relates to a crystalline silicon TFT panel for LCD and a method of fabricating the same. According to the present invention, an addressing TFT, a pixel driving TFT and a storage capacitor, which include a crystalline silicon thin film, are formed at a pixel region of the TFT panel using MILC and a low-concentration doped region having an impurity concentration of 1E14 cm2 lower is formed around a channel region of an addressing TFT for supplying current to a storage capacitor, so that an off current of the addressing TFT can be effectively lowered. Thus, the present invention has an advantage in that semiconductor devices required in the pixel region and a peripheral region of the TFT panel for OLED can be simultaneously fabricated through a relatively simple process, and thus, an off current characteristic and an on current characteristic that are required in the pixel region and the peripheral region, respectively, can be simultaneously satisfied.