Patents by Inventor Seong Chung
Seong Chung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240177972Abstract: Provided is a method for etching an atomic layer. The method for etching the atomic layer includes providing a substrate to a process chamber, wherein the process chamber comprises a first chamber part and a second chamber part, and the substrate is provided in the second chamber part, generating adsorption gas plasma in the first chamber part, adsorbing radicals of the adsorption gas plasma to the substrate so as to form a treatment layer, generating etching gas plasma in the first chamber part, and allowing electrons and ions of the etching gas plasma to be alternately incident into the treatment layer so as to perform desorption of the treatment layer.Type: ApplicationFiled: November 1, 2023Publication date: May 30, 2024Applicants: RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY, IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)Inventors: Geun Young YEOM, Chin Wook CHUNG, Yun Jong JANG, Doo San KIM, Ye Eun KIM, Hong Seong GIL, Hae In KWON, Jun Young PARK, Ji Won JUNG
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Publication number: 20240174168Abstract: The present disclosure provides a method and an apparatus for recognizing an emergency vehicle. An apparatus for recognizing an emergency vehicle is provided, including a processor; and a memory configured to store at least one instruction executed by the processor. The processor is configured to control at least one or more sensors to recognize an approach of the emergency vehicle and a road condition, to determine an first avoidance location that is a location for an first car to move away from the emergency vehicle based on the road condition, to provide a first avoidance route that is a route for the first cat to move from a current location to the first avoidance location, and to control at least one projection device to project at least one of a first symbol indicating the approaching of the emergency vehicle or the first avoidance route.Type: ApplicationFiled: May 22, 2023Publication date: May 30, 2024Inventors: Jung Seok SUH, Hae Seong Jeong, Mi Jin Chung, Ja Yoon Goo, Hong Gyu Lee
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Publication number: 20240170721Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.Type: ApplicationFiled: January 21, 2022Publication date: May 23, 2024Inventors: Min Jung JANG, Min Goo KIM, Young Rok LIM, Ji Young CHOI, Sang Ho LEE, Wan Chul KANG, Jong Cheol YUN, Ji Seong HAN, Hee Jeong RYU, Jae Won CHUNG
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Publication number: 20240142249Abstract: A computer implemented method and apparatus provide a route to postpone or delay arrival of a vehicle at a destination. The method includes: obtaining, by a processor, behavior information indicating a behavior of an occupant in the vehicle; receiving, by the processor from the occupant, time information for postponing arrival of the vehicle at the destination; and providing, by the processor, at least one recommended route according to the behavior information and the time information.Type: ApplicationFiled: March 14, 2023Publication date: May 2, 2024Applicants: HYUNDAI MOTOR COMPANY, KIA CORPORATIONInventors: Jung Seok Suh, Hae Seong Jeong, Mi Jin Chung, Ja Yoon Goo, Hong Gyu Lee
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Publication number: 20240140463Abstract: Disclosed is a method of providing driving information of an autonomous vehicle performed by an apparatus that includes a first sensor unit, a second sensor unit, a processor, and a projection unit. The method includes: acquiring, by the first sensor unit, surroundings information of the autonomous vehicle; acquiring, by the second sensor unit, information on an occupant on board the autonomous vehicle; generating, by the processor, main driving information from the surroundings information of the autonomous vehicle acquired by the first sensor unit; determining, by the processor, the main driving information to be provided to the occupant from among the main driving information based on the information on the occupant; and providing, by the projection unit, the main driving information determined by the processor to the occupant of the autonomous vehicle.Type: ApplicationFiled: February 27, 2023Publication date: May 2, 2024Applicants: HYUNDAI MOTOR COMPANY, KIA CORPORATIONInventors: Jung Seok Suh, Hae Seong Jeong, Mi Jin Chung, Ja Yoon Goo, Hong Gyu Lee
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Publication number: 20240127755Abstract: A display device includes a pixel driving circuit, a first-type light-emitting element electrically connected to the pixel driving circuit, a second-type light-emitting element electrically connected to the pixel driving circuit, and a light path control layer disposed to overlap the second-type light-emitting element, where the light path control layer controls a path of light provided from the second-type light-emitting element.Type: ApplicationFiled: August 7, 2023Publication date: April 18, 2024Inventors: JINKOO CHUNG, SEONG-MIN KIM, BEOHMROCK CHOI
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Publication number: 20240105991Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.Type: ApplicationFiled: January 21, 2022Publication date: March 28, 2024Inventors: Min Jung JANG, Min Goo KIM, Young Rok LIM, Ji Young CHOI, Sang Ho LEE, Wan Chul KANG, Jong Cheol YUN, Ji Seong HAN, Hee Jeong RYU, Jae Won CHUNG
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Publication number: 20240097188Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.Type: ApplicationFiled: January 21, 2022Publication date: March 21, 2024Inventors: Min Jung JANG, Min Goo KIM, Young Rok LIM, Ji Young CHOI, Sang Ho LEE, Wan Chul KANG, Jong Cheol YUN, Ji Seong HAN, Hee Jeong RYU, Jae Won CHUNG
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Publication number: 20240097190Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.Type: ApplicationFiled: January 21, 2022Publication date: March 21, 2024Inventors: Min Jung JANG, Min Goo KIM, Young Rok LIM, Ji Young CHOI, Sang Ho LEE, Wan Chul KANG, Jong Cheol YUN, Ji Seong HAN, Hee Jeong RYU, Jae Won CHUNG
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Publication number: 20240097189Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.Type: ApplicationFiled: January 21, 2022Publication date: March 21, 2024Inventors: Min Jung JANG, Min Goo KIM, Young Rok LIM, Ji Young CHOI, Sang Ho LEE, Wan Chul KANG, Jong Cheol YUN, Ji Seong HAN, Hee Jeong RYU, Jae Won CHUNG
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Publication number: 20230411519Abstract: A semiconductor device includes a deep well region located on a substrate, a drift region located in the deep well region, a first gate electrode that overlaps with the first body region and the drift region, a second gate electrode that overlaps with the second body region and the drift region, a first source region and a second source region located in the first and second body regions, respectively, a drain region located in the drift region and disposed between the first gate electrode and the second gate electrode, a silicide layer located on the substrate, a first non-silicide layer located between the drain region and the first gate electrode, wherein the first non-silicide layer extends over a top surface of the first gate electrode, and a first field plate contact plug in contact with the first non-silicide layer.Type: ApplicationFiled: September 6, 2023Publication date: December 21, 2023Applicant: Key Foundry Co., Ltd.Inventors: Jin Seong CHUNG, Tae Hoon LEE
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Patent number: 11791409Abstract: A semiconductor device includes a deep well region located on a substrate, a drift region located in the deep well region, a first gate electrode that overlaps with the first body region and the drift region, a second gate electrode that overlaps with the second body region and the drift region, a first source region and a second source region located in the first and second body regions, respectively, a drain region located in the drift region and disposed between the first gate electrode and the second gate electrode, a silicide layer located on the substrate, a first non-silicide layer located between the drain region and the first gate electrode, wherein the first non-silicide layer extends over a top surface of the first gate electrode, and a first field plate contact plug in contact with the first non-silicide layer.Type: GrantFiled: January 5, 2023Date of Patent: October 17, 2023Assignee: KEY FOUNDRY CO., LTD.Inventors: Jin Seong Chung, Tae Hoon Lee
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Publication number: 20230145810Abstract: A semiconductor device includes a deep well region located on a substrate, a drift region located in the deep well region, a first gate electrode that overlaps with the first body region and the drift region, a second gate electrode that overlaps with the second body region and the drift region, a first source region and a second source region located in the first and second body regions, respectively, a drain region located in the drift region and disposed between the first gate electrode and the second gate electrode, a silicide layer located on the substrate, a first non-silicide layer located between the drain region and the first gate electrode, wherein the first non-silicide layer extends over a top surface of the first gate electrode, and a first field plate contact plug in contact with the first non-silicide layer.Type: ApplicationFiled: January 5, 2023Publication date: May 11, 2023Applicant: Key Foundry Co., Ltd.Inventors: Jin Seong CHUNG, Tae Hoon LEE
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Patent number: 11581434Abstract: A semiconductor device includes a deep well region located on a substrate, a drift region located in the deep well region, a first gate electrode that overlaps with the first body region and the drift region, a second gate electrode that overlaps with the second body region and the drift region, a first source region and a second source region located in the first and second body regions, respectively, a drain region located in the drift region and disposed between the first gate electrode and the second gate electrode, a silicide layer located on the substrate, a first non-silicide layer located between the drain region and the first gate electrode, wherein the first non-silicide layer extends over a top surface of the first gate electrode, and a first field plate contact plug in contact with the first non-silicide layer.Type: GrantFiled: August 12, 2021Date of Patent: February 14, 2023Assignee: KEY FOUNDRY CO., LTD.Inventors: Jin Seong Chung, Tae Hoon Lee
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Patent number: 11568911Abstract: Provided is a method of operating a magnetic memory system. The method of operating the magnetic memory system includes: preparing a plurality of magnetic memory cells; classifying the magnetic memory cells into a plurality of magnetic memory cell groups by using program current values of the magnetic memory cells; constructing a magnetic memory system by hierarchizing the magnetic memory cell groups; and primarily performing programming by selecting one magnetic memory cell group from the hierarchized magnetic memory cell groups according to an external temperature.Type: GrantFiled: May 24, 2021Date of Patent: January 31, 2023Assignee: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)Inventors: Taewhan Kim, Woo Seong Chung
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Publication number: 20210376147Abstract: A semiconductor device includes a deep well region located on a substrate, a drift region located in the deep well region, a first gate electrode that overlaps with the first body region and the drift region, a second gate electrode that overlaps with the second body region and the drift region, a first source region and a second source region located in the first and second body regions, respectively, a drain region located in the drift region and disposed between the first gate electrode and the second gate electrode, a silicide layer located on the substrate, a first non-silicide layer located between the drain region and the first gate electrode, wherein the first non-silicide layer extends over a top surface of the first gate electrode, and a first field plate contact plug in contact with the first non-silicide layer.Type: ApplicationFiled: August 12, 2021Publication date: December 2, 2021Applicant: Key Foundry Co., Ltd.Inventors: Jin Seong CHUNG, Tae Hoon LEE
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Patent number: 11121253Abstract: A semiconductor device includes a deep well region located on a substrate, a drift region located in the deep well region, a first gate electrode that overlaps with the first body region and the drift region, a second gate electrode that overlaps with the second body region and the drift region, a first source region and a second source region located in the first and second body regions, respectively, a drain region located in the drift region and disposed between the first gate electrode and the second gate electrode, a silicide layer located on the substrate, a first non-silicide layer located between the drain region and the first gate electrode, wherein the first non-silicide layer extends over a top surface of the first gate electrode, and a first field plate contact plug in contact with the first non-silicide layer.Type: GrantFiled: March 4, 2020Date of Patent: September 14, 2021Assignee: Key Foundry Co., Ltd.Inventors: Jin Seong Chung, Tae Hoon Lee
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Publication number: 20210104630Abstract: A semiconductor device includes a deep well region located on a substrate, a drift region located in the deep well region, a first gate electrode that overlaps with the first body region and the drift region, a second gate electrode that overlaps with the second body region and the drift region, a first source region and a second source region located in the first and second body regions, respectively, a drain region located in the drift region and disposed between the first gate electrode and the second gate electrode, a silicide layer located on the substrate, a first non-silicide layer located between the drain region and the first gate electrode, wherein the first non-silicide layer extends over a top surface of the first gate electrode, and a first field plate contact plug in contact with the first non-silicide layer.Type: ApplicationFiled: March 4, 2020Publication date: April 8, 2021Applicant: KEY FOUNDRY CO., LTD.Inventors: Jin Seong CHUNG, Tae Hoon LEE
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Patent number: 10680080Abstract: A method for manufacturing a semiconductor device includes forming a gate insulation film and a polysilicon layer on a substrate, forming a polysilicon pattern by etching the polysilicon layer, forming an opening in the polysilicon pattern that exposes a part of the polysilicon pattern by forming a mask pattern on the polysilicon pattern, forming a gate electrode by etching the part of the polysilicon pattern exposed through the opening, forming a P-type body region by ion implanting a P-type dopant onto the substrate using the gate electrode as a mask, forming an N-type LDD region on the P-type body region by ion implanting an N-type dopant onto the substrate using the gate electrode as a mask, forming a spacer on a side surface of the gate electrode, and forming an N-type source region on a side surface of the spacer.Type: GrantFiled: October 17, 2018Date of Patent: June 9, 2020Assignee: MagnaChip Semiconductor, Ltd.Inventors: Tae Hoon Lee, Jun Hee Cho, Jin Seong Chung
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Patent number: D1017633Type: GrantFiled: April 22, 2021Date of Patent: March 12, 2024Assignee: Coupang Corp.Inventors: Jonathan Chung, Seong Eun Kim, Sang Bin Hyun