Abstract: Cooling apparatuses and a system including the same may be provided. The cooling apparatus including a freezer, a first cooling unit configured to cool a first cooling water supplied to the freezer in open air, and a second cooling unit configured to cool a second cooling water supplied to the first cooling unit may be provided. According to a temperature difference between the open air and the first cooling water, the second cooling unit may circulate the second cooling water separately with respect to the first cooling water or mix the second cooling water into the first cooling water.

Abstract: Cooling apparatuses and a system including the same may be provided. The cooling apparatus including a freezer, a first cooling unit configured to cool a first cooling water supplied to the freezer in open air, and a second cooling unit configured to cool a second cooling water supplied to the first cooling unit may be provided. According to a temperature difference between the open air and the first cooling water, the second cooling unit may circulate the second cooling water separately with respect to the first cooling water or mix the second cooling water into the first cooling water.

Abstract: A method of forming a tungsten plug in a semiconductor device includes forming a contact hole in an insulating layer, forming a contiguous titanium layer in the contact hole and on the insulating layer, forming a titanium nitride layer on the titanium layer. forming a thin tungsten layer of about 50 angstroms or less on the titanium nitride layer by CVD (chemical vapor deposition), annealing the structure once the thin tungsten layer has been formed, and depositing additional tungsten by CVD to completely fill the contact hole. The titanium nitride layer can be formed by a discrete CVD process or as a result of the annealing process. Forming a thin tungsten layer by CVD before the contact hole is completely filled in with tungsten is used to stabilize the titanium layer. For instance, a small amount of fluorine from the source gas of the thin tungsten layer diffuses into the titanium layer.

Abstract: A method of forming a tungsten plug in a semiconductor device includes forming a contact hole in an insulating layer, forming a contiguous titanium layer in the contact hole and on the insulating layer, forming a titanium nitride layer on the titanium layer. forming a thin tungsten layer of about 50 angstroms or less on the titanium nitride layer by CVD (chemical vapor deposition), annealing the structure once the thin tungsten layer has been formed, and depositing additional tungsten by CVD to completely fill the contact hole. The titanium nitride layer can be formed by a discrete CVD process or as a result of the annealing process. Forming a thin tungsten layer by CVD before the contact hole is completely filled in with tungsten is used to stabilize the titanium layer. For instance, a small amount of fluorine from the source gas of the thin tungsten layer diffuses into the titanium layer.