Abstract: According to embodiments, modeling through evaluation of thermal-hydraulic analysis of a unique containment facility may be provided. Also, orders for nuclear power plants in other countries may be obtained, and a relative technological advantage may be achieved among nuclear power plant developing countries. In addition, a power plant may be designed through conservative and realistic modeling, and costs required for power plant design may be reduced by optimizing a design margin of a containment facility.

Abstract: A laminate can comprise an oxide disposed over a first major surface of a substrate. The oxide layer can comprise a thickness of about 40 nanometers or less. The oxide layer can comprise oxygen and a first element. The first element can comprise at least one of titanium, tantalum, silicon, or aluminum. The oxide layer can comprise an atomic ratio of oxygen to the another element of about 1.5 or less. The laminate can comprise a peel strength between the substrate and the oxide layer of about 1.3 Newtons per centimeter or more. Methods of making a laminate can comprise providing a substrate comprising a first major surface and depositing an oxide layer over the first major surface of the substrate by sputtering from an elemental target comprising an another element in an oxygen environment.

Abstract: A block management method for OPC model calibration includes calculating differences in several different optical functions between first patterns of a first mask and patterns of a second mask corresponding to the first patterns but differing therefrom by a predetermined bias, selecting one or more of the optical functions based on the calculated differences, clustering data of variations in the values of the calculated differences in the selected ones of the optical functions, selecting respective ones of the first patterns in consideration of how the data clusters, and designating the selected first patterns as test patterns.

Abstract: Provided is a method of manufacturing a photo-mask having a micro pattern. The method includes providing an analyzing design layout, dividing the analyzing design layout into a two-dimensionally repeated portion, a one-dimensionally repeated portion, and a non-repeated portion, forming a first corrected layout by performing optical proximity correction (OPC) in the two-dimensionally repeated portion, forming a second corrected layout, taking account of the first corrected layout, by performing OPC in the one-dimensionally repeated portion, forming a third corrected layout, taking account of the first corrected layout and the second corrected layout, by performing OPC in the non-repeated portion, and forming a photo-mask based on the first through third corrected layouts.

Abstract: Disclosed is a method and an apparatus for communication in a TDD (Time Division Duplex) based wireless communication system. The present invention involves setting a first frame comprising a plurality of consecutive downlink subframes and a plurality of consecutive uplink subframes. The start point for the first uplink subframe in the plurality of consecutive uplink subframes, is located at a switching point in a second frame used by another system.

Abstract: A block management method for OPC model calibration includes calculating differences in several different optical functions between first patterns of a first mask and patterns of a second mask corresponding to the first patterns but differing therefrom by a predetermined bias, selecting one or more of the optical functions based on the calculated differences, clustering data of variations in the values of the calculated differences in the selected ones of the optical functions, selecting respective ones of the first patterns in consideration of how the data clusters, and designating the selected first patterns as test patterns.

Abstract: A method for performing a ranging procedure includes transmitting a ranging request message through a randomly selected ranging slot to a base station, the ranging request message comprising a randomly selected ranging code, and receiving a ranging response message including collision information which informs that collision occurs when at least two user equipments transmit the same ranging code to the base station through the same ranging slot. Delay in the ranging can be reduced.

Abstract: A method for transmitting data in a wireless communication system is provided. The method includes: transmitting first data through a radio resource allocated in a unit of a default transmission time interval (TTI) including at least one sub-frame in a frame including a plurality of sub-frames consisting of a plurality of orthogonal frequency division multiplexing (OFDM) symbols; and transmitting second data through a radio resource allocated in a unit of a modified TTI obtained by changing the number of sub-frames included in the default TTI in the frame.

Abstract: A method for performing a cell search procedure by a user equipment in a wireless communication system includes receiving a primary synchronization signal (PSS), and obtaining a correlation value of the PSS to detect a multimedia broadcast multicast service (MBMS) indicator indicating whether a service is a dedicated MBMS. Accordingly, whether the service is the dedicated MBMS is indicated using a primary synchronization signal or a secondary synchronization signal used in an initial cell search process, and whether the service is the dedicated MBMS can be known without additional complexity. Therefore, cell search of a user equipment can be more effectively performed.

Abstract: A method of transmitting data in a wireless communication system, includes: transmitting first data via a first frame for a first wireless communication system; transmitting second data via a second frame for a second wireless communication system supporting backward compatibility with respect to the first wireless communication system; and transmitting control information with respect to the first and second frames, wherein the control information includes a frame control header (FCH) which indicates information about the second frame by using a reserved bit region of the first frame.

Abstract: A method of fabricating a photomask includes OPC of a mask pattern based on an approximated (i.e., a predicted) critical dimension (CD) of a film pattern formed using the photomask. First, a photomask is provided, a photosensitive film pattern is formed by a lithographic process using the photomask, a CD of the photosensitive film pattern is determined using a scanning electron microscope (SEM), and a value of the CD of the photosensitive film pattern, at a point in time before the film pattern has been shrunk by the SEM, is approximated by measuring the CD using a reference microscope (e.g., an AFM) and the SEM or just by using the SEM in several sequences.

Abstract: Provided is a method of manufacturing a photo-mask having a micro pattern. The method includes providing an analyzing design layout, dividing the analyzing design layout into a two-dimensionally repeated portion, a one-dimensionally repeated portion, and a non-repeated portion, forming a first corrected layout by performing optical proximity correction (OPC) in the two-dimensionally repeated portion, forming a second corrected layout, taking account of the first corrected layout, by performing OPC in the one-dimensionally repeated portion, forming a third corrected layout, taking account of the first corrected layout and the second corrected layout, by performing OPC in the non-repeated portion, and forming a photo-mask based on the first through third corrected layouts.

Abstract: A method of forming a mask pattern, a method of forming a minute pattern, and a method of manufacturing a semiconductor device using the same, the method of forming the mask pattern including forming first mask patterns on a substrate; forming first preliminary capping layers on the first mask patterns; irradiating energy to the first preliminary capping patterns to form second preliminary capping layers ionically bonded with the first mask patterns; applying an acid to the second preliminary capping layers to form capping layers; forming a second mask layer between the capping layers, the second mask layer having a solubility lower than that of the capping layers; and removing the capping layers to form second mask patterns.

Abstract: In a method of forming a hole, an insulation layer is formed on a substrate, and a preliminary hole exposing the substrate is formed through the insulation layer. A photosensitive layer pattern including an organic polymer is then formed on the substrate to fill the preliminary hole. An etching gas including hydrogen fluoride (HF) or fluorine (F2) is then provided onto the photosensitive layer pattern to etch the insulation layer so that width of the preliminary hole is increased.

Abstract: A method of performing channel sounding in a frequency division duplex (FDD) system in which an uplink frame and a downlink frame use different frequency bands includes dividing a transmission bandwidth with respect to the uplink frame into a plurality of sounding zones, allocating at least one of the plurality of sounding zones to a user equipment and receiving a sounding signal from the user equipment through the allocated sounding zone. Inter-cell interference can be mitigated and overhead due to transmission of the sounding signal can be reduced.

Abstract: A method of manufacturing a memory device having a carbon nanotube can be provided by forming a lower electrode on a substrate and forming an insulating interlayer on the lower electrode. An upper electrode including a diode can be formed on the insulating interlayer, where the upper electrode can have a first void exposing a sidewall of the diode and a portion of the insulating interlayer. A portion of the insulating interlayer can be partially removed to form an insulating interlayer pattern having a second void that exposes a portion of the lower electrode, where the second void can be connected with the first void. A carbon nanotube wiring can be formed from the lower electrode through the second and first voids, where the carbon nanotube wiring may be capable of being electrically connected with the diode of the upper electrode by a voltage applied to the lower electrode.

Abstract: In a memory device having a carbon nanotube and a method of manufacturing the same, the memory device includes a lower electrode, an upper electrode having a first void exposing a sidewall of a diode therein, an insulating interlayer pattern having a second void exposing a portion of the lower electrode between the lower electrode and the upper electrode, and a carbon nanotube wiring capable of being electrically connected with the diode of the upper electrode by a voltage applied to the lower electrode. The memory device may reduce generation of a leakage current in a cross-bar memory.

Abstract: A method of manufacturing a semiconductor device includes forming a first mask pattern on a substrate by using a material including a polymer having a protection group de-protectable by an acid, the first mask pattern having a plurality of holes; forming a capping layer on an exposed surface of the first mask pattern, the capping layer including an acid source; diffusing the acid source into the first mask pattern so that the protection group becomes de-protectable from the polymer in the first mask pattern; forming a second mask layer on the capping layer, the second mask layer separate from the first mask pattern and filling the plurality of holes in the first mask pattern; and forming a plurality of second mask patterns in the plurality of holes by removing the capping layer and the first mask pattern.

Abstract: In a method of forming a hole, an insulation layer is formed on a substrate, and a preliminary hole exposing the substrate is formed through the insulation layer. A photosensitive layer pattern including an organic polymer is then formed on the substrate to fill the preliminary hole. An etching gas including hydrogen fluoride (HF) or fluorine (F2) is then provided onto the photosensitive layer pattern to etch the insulation layer so that width of the preliminary hole is increased.

Abstract: A method of forming a mask pattern, a method of forming a minute pattern, and a method of manufacturing a semiconductor device using the same, the method of forming the mask pattern including forming first mask patterns on a substrate; forming first preliminary capping layers on the first mask patterns; irradiating energy to the first preliminary capping patterns to form second preliminary capping layers ionically bonded with the first mask patterns; applying an acid to the second preliminary capping layers to form capping layers; forming a second mask layer between the capping layers, the second mask layer having a solubility lower than that of the capping layers; and removing the capping layers to form second mask patterns.