Abstract: An image sensing device and a method for forming the same are disclosed. The image sensing device includes a substrate including one or more photoelectric conversion elements, and a grid structure disposed over the substrate. The grid structure includes an air layer, a support film formed over the air layer, and a capping film formed at side surfaces of the air layer and the support film and at a top surface of the support film.

Abstract: An image sensing device and a method for forming the same are disclosed. The image sensing device includes a substrate including one or more photoelectric conversion elements, and a grid structure disposed over the substrate. The grid structure includes an air layer, a support film formed over the air layer, and a capping film formed at side surfaces of the air layer and the support film and at a top surface of the support film.

Abstract: Provided are an apparatus and method for depositing a thin film, and a method for gap-filling a trench in a semiconductor device. The thin film depositing apparatus includes a plurality of substrates provided on the same space inside a reactor, wherein deposition of the thin film and partial etching of the deposited thin film are repeated to form the thin film on the plurality of substrates by exposing the substrates to two or more source gases and an etching gas supplied together at predetermined time intervals while rotating the substrates. According to exemplary embodiments, it is possible to concurrently or alternatively perform deposition and etching of a thin film, so that a thin film with good gap-fill capability can be deposited.