Abstract: The present invention provides a capillary electrode discharge plasma display panel device and method of fabricating the same including first and second substrates a first electrode on the first substrate, a second electrode on the second substrate, a pair of barrier ribs connecting the first and second substrates, a discharge charge chamber between the first and second substrates defined by the barrier ribs, and a dielectric layer on the first substrate including the first electrode, the dielectric layer having a capillary to provide a steady state UV emission in the discharge chamber.

Abstract: A plasma treatment apparatus for a workpiece includes a metal electrode, a capillary dielectric electrode having first and second sides and coupled to the metal electrode through the first side, wherein the capillary dielectric electrode has at least one capillary, a shield body surrounding the metal electrode and the first side of the capillary dielectric electrode, wherein the shield body has first and second end portions, and a gas supplier providing gas to the metal electrode.

Abstract: The present invention provides a capillary electrode discharge plasma display panel device and method of fabricating the same including first and second substrates a first electrode on the first substrate, a second electrode on the second substrate, a pair of barrier ribs connecting the first and second substrates, a discharge charge chamber between the first and second substrates defined by the barrier ribs, and a dielectric layer on the first substrate including the first electrode, the dielectric layer having a capillary to provide a steady state UV emission in the discharge chamber.

Abstract: An apparatus for processing wafers in the present invention includes first and second processing chambers isolated from each other, an isolation chamber coupled to each processing chamber, a single first type vacuum pump alternatively pumping down the first and second processing chambers through the isolation chamber, wherein the first type vacuum pump can pump down the first processing chamber when a wafer is loaded or unloaded in the second processing chamber, and the first type vacuum pump can pump down the second processing chamber when a wafer is loaded or unloaded in the first processing chamber, a wafer processing source chamber having a wafer processing source, the wafer processing source chamber being coupled to the first and second processing chambers and the isolation chamber, and a plurality of second type vacuum pumps coupled to the first and second processing chambers and the wafer processing source chamber.

Abstract: The present invention provides a capillary electrode discharge plasma display panel device and method of fabricating the same including first and second substrates a first electrode on the first substrate, a second electrode on the second substrate, a pair of barrier ribs connecting the first and second substrates, a discharge charge chamber between the first and second substrates defined by the barrier ribs, and a dielectric layer on the first substrate including the first electrode, the dielectric layer having a capillary to provide a steady state UV emission in the discharge chamber.

Abstract: An apparatus for processing wafers in the present invention includes first and second processing chambers isolated from each other, an isolation chamber coupled to each processing chamber, a single first type vacuum pump alternatively pumping down the first and second processing chambers through the isolation chamber, wherein the first type vacuum pump can pump down the first processing chamber when a wafer is loaded or unloaded in the second processing chamber, and the first type vacuum pump can pump down the second processing chamber when a wafer is loaded or unloaded in the first processing chamber, a wafer processing source chamber having a wafer processing source, the wafer processing source chamber being coupled to the first and second processing chambers and the isolation chamber, and a plurality of second type vacuum pumps coupled to the first and second processing chambers and the wafer processing source chamber.

Abstract: A cold cathode electron emission structure includes an amorphous carbon matrix having cesium dispersed therein, with the cesium present in substantially non-crystalline form. A cesium-carbon-oxide layer is positioned on the amorphous carbon matrix, constitutes an electron emission surface and causes the cold cathode electron emission structure to exhibit a lowered surface work function. A display structure including the aforedescribed cold cathode electron emission structure further includes a target electrode including a phosphor and exhibiting a target potential for attraction of electrons. A gate electrode is positioned between the electron emission structure and the target electrode and is biased at a gate potential which attracts electrons, but which is insufficient, in combination with the target potential, to cause emission of a beam of electrons from the electron emission structure.

Abstract: A composition of matter in the form of an amorphous matrix having cesium dispersed therein is disclosed. The composition is capable of cold cathode emission, thus emitting electrons at wide range of temperatures, including room temperature. The matrix can be formed from amorphous diamond, diamond-like carbon, and other materials as well. Methods of making an amorphous matrix using single and multi-ion beam techniques are also disclosed.

Abstract: A solid state cesium ion gun comprises an ion emission pellet, a pellet heating mechanism, a replaceable ion source unit, ion extraction electrodes, and a self-supporting feedthrough flange. The ion emission pellet is capable of emitting positive cesium ions. One end of the pellet is sputter coated with a thin film of porous tungsten (cathode) from which ions are emitted. The other end of the pellet (anode) is coated with platinum which enables application of a bias to the pellet to direct the cesium ions toward the emitting electrode. The area of the anode electrode determines the life of the ion source. The ion emission pellet is heated to 1000.degree. C. and is not in contact with the beam forming electrode so as to minimize the heat losses. A thin tantalum or molybdenum tube is used to enclose the pellet and minimizes heat conduction losses. The ion gun includes a replaceable ion source unit and a mountable gun unit which mounts extraction electrodes.

Abstract: A motion compensating apparatus comprising an encoding circuit for compressing and transmitting a video signal of a DFD frame which is a difference between a video signal of a present frame and a motion compensated video signal, a motion compensating circuit for restoring a quantized video signal from the encoding circuit, estimating a motion of the video signal of the present frame in the unit of block on the basis of the restored video signal to obtain a motion vector based on the estimated motion and compensating for a video signal of a reference frame on the basis of the obtained motion vector, a DF scaling factor generating circuit for varying a DF scaling factor properly about 1 when the DF scaling factor is varied according to an output state of the encoding circuit, and a multiplying circuit for multiplying the motion compensated video signal from the motion compensating circuit by the DF scaling factor from the DF scaling factor generating circuit.

Abstract: A negative ion beam source includes a heated refractory metal ribbon which is positioned adjacent a beam forming electrode that is, biased to repel positive ions emitted from the metal ribbon. An extraction electrode is juxtaposed to the beam forming electrode and includes an aperture for passing a beam of positive ions generated by the metal ribbon. The extraction electrode includes a cesium chamber with openings that are directed towards the refractory metal ribbon. A heater heats the cesium chamber and causes it to expel cesium neutrals towards a surface of the refractory metal ribbon where the cesium neutrals are ionized to positively charged cesium ions. A target is displaced to one side of a perpendicular from the surface of the refractory metal ribbon and is positioned adjacent a negative ion beam forming electrode that is biased to attract the cesium ion beam and to repel negative ions produced by cesium ion bombardment of the target.