Abstract: The objective of the present invention is to effectively improve an image lag phenomenon of a direct conversion detector. The present invention provides an X-ray detector comprising: a lower electrode, formed on a substrate, to which a first driving voltage V1 is applied; an auxiliary electrode, around the lower electrode, to which a third driving voltage V3 is applied; a photoconductive layer formed on the lower electrode and the auxiliary electrode; and an upper electrode, formed on the photoconductive layer, to which a second driving voltage V2 is applied, wherein the third driving voltage V3, right after the radiation of the X-rays is off, is a reverse bias voltage.

Abstract: The objective of the present invention is to effectively improve an image lag phenomenon of a direct conversion detector. The present invention provides an X-ray detector comprising: a lower electrode, formed on a substrate, to which a first driving voltage V1 is applied; an auxiliary electrode, around the lower electrode, to which a third driving voltage V3 is applied; a photoconductive layer formed on the lower electrode and the auxiliary electrode; and an upper electrode, formed on the photoconductive layer, to which a second driving voltage V2 is applied, wherein the third driving voltage V3, right after the radiation of the X-rays is off, is a reverse bias voltage.

Abstract: A flexible organic thin-film transistor according to an exemplary embodiment of the present disclosure includes an active layer formed on a flexible substrate from a material having a smaller grain size than 100 nanometers (nm) and arrangement in a herringbone structure. Also, a sensor according to another exemplary embodiment of the present disclosure includes at least two flexible organic thin-film transistors coupled to be of an inverter type.

Abstract: According to example embodiments, a photodiode includes a photoelectric layer on a first electrode, a second electrode on the photoelectric layer, and a first phosphorescence layer on the second electrode.

Abstract: A method of manufacturing a semiconductor device, the method includes: providing a gate electrode on a substrate; providing a first interlayer insulating layer to cover the gate electrode on the substrate; providing an oxide semiconductor layer corresponding to the gate electrode on the first interlayer insulating layer; providing a source electrode and a drain electrode, which are in contact with the oxide semiconductor layer, on the first interlayer insulating layer; and heat-treating the oxide semiconductor layer using Joule heat generated therein from a flow of a drain current by applying a voltage to the source electrode or the drain electrode.

Abstract: According to example embodiments, a photodiode includes a photoelectric layer on a first electrode, a second electrode on the photoelectric layer, and a first phosphorescence layer on the second electrode.

Abstract: The nanoparticle electroluminescence device includes: a front electrode formed of a transparent conductive material; a rear electrode formed of a conductive material; and an emitting layer interposed between the front electrode and the rear electrode and comprising a plurality of nanoparticles having a core/shell structure comprising a core formed of silicon and a shell formed of silicon oxide or silicon nitride on the surface of the core.

Abstract: The nanoparticle electroluminescence device includes: a front electrode formed of a transparent conductive material; a rear electrode formed of a conductive material; and an emitting layer interposed between the front electrode and the rear electrode and comprising a plurality of nanoparticles having a core/shell structure comprising a core formed of silicon and a shell formed of silicon oxide or silicon nitride on the surface of the core.