Abstract: An output buffer is disclosed. In the prior art, when an output buffer swings to a supply voltage Vcc and a ground voltage Vss, the current drops rapidly at the supply voltage or the ground voltage, thereby generating bouncing of the supply voltage Vcc or bouncing of the ground voltage Vss. For eliminating this phenomenon, a capacitor is provided connected to an output node of the inventive output buffer to reduce the amount of the current flowing to the supply voltage terminal and the ground voltage terminal at the time point at which an output level is changed. Therefore, voltage drop and the bouncing of the supply voltage and the ground voltage is reduced by applying a precharge voltage which is precharged in the capacitor to the output node.

Abstract: A low-power, high-speed sense amplifier for a memory device with at least one memory cell, comprising a voltage shifter for inputting voltages from data bus and data bus bar lines connected respectively to bit and bit bar lines connected to the memory cell and, in response to a sense amplifier enable signal, decreasing the inputted voltages and shifting the decreased voltages, a current sense amplification circuit responsive to the sense amplifier enable signal for sensing current of an output voltage from the voltage shifter to increase a gain thereof, and a voltage sense amplification circuit for sensing a difference between the output voltage from the voltage shifter and an output voltage from the current sense amplification circuit.

Abstract: The present invention relates to a semiconductor and a method for fabrication thereof and particularly to a semiconductor having a field oxide having a shape such that the lower part is wider that the upper part.Therefore, according to the present invention, the ion implantation process for forming a channel stop region becomes unnecessary, because of the effect of accurate insulation between the devices and the pn junction area can be decreased, so that the junction capacitance becomes decreased. Furthermore, because LOCOS edge does not coincide with the junction edge, the leakage current due to the damage of the edge is not generated. Because a field oxide is of the buried inverse T-type, the effective width of the device is increased more than that of a mask. Because the bird's beak is not generated, the problem due to the narrow width can be settled.

Abstract: Method and apparatus for producing paper powder from paper-like sheet material by initially corrugating the sheet material so as to stiffen it and thereafter while so stiffened repeatedly impacting it so as to pulverize it into powder.

Abstract: A method of making a semiconductor memory device wherein a storage node having a plurality of pillars, capable of increasing the storage node surface area and thus the cell capacitance. The storage node is formed by depositing a storage node polysilicon film to have a thickness of 5,000 .ANG. to 6,000 .ANG. over a semiconductor substrate, forming a photoresist pattern over the polysilicon film in a direct electron beam writing manner, and etching the polysilicon film up to a depth of 1,000 .ANG. from the upper surfaces of a gate and a bit line by using the photoresist pattern. The formed storage node has a plurality of uniformly spaced pillars.

Abstract: A MOSFET comprising a gate oxide layer on a silicon substrate, a polysilicon gate formed on the gate oxide layer, the width of which gradually widens going from bottom to top, a side gate oxide layer formed by an oxidation process surrounding the polysilicon gate, the side gate oxide layer also gradually widening from bottom to top, a source/drain region beside the gate oxide layer, a connection element having a stacked structure of an oxide layer and a polysilicon or polycide layer on the field oxide, a doped polysilicon side wall beside the side gate oxide layer and making electric connection between the source/drain region and the connection element.

Abstract: The present invention relates to a semiconductor and a method for fabrication thereof and particularly to a semiconductor having a field oxide having a shape such that the lower part is wider that the upper part. Therefore, according to the present invention, the ion implantation process for forming a channel stop region becomes unnecessary, because of the effect of accurate insulation between the devices and the pn junction area can be decreased, so that the junction capacitance becomes decreased. Furthermore, because LOCOS edge does not coincide with the junction edge, the leakage current due to the damage of the edge is not generated. Because a field oxide is of the buried inverse T-type, the effective width of the device is increased more than that of a mask. Because the bird's beak is not generated, the problem due to the narrow width can be settled.