Abstract: An embodiment fuel cell including a high temperature polymer electrolyte membrane includes an electrolyte membrane including a phosphoric acid-doped polymer of intrinsic microporosity, a cathode disposed on a first surface of the electrolyte membrane, and an anode disposed on a second surface of the electrolyte membrane, the second surface opposite the first surface.

Abstract: The present invention relates to a brushless motor, and more particularly, to a brushless motor capable of cogging torque and torque ripples of the motor by means of design structures such as a shape of an opposing surface of a pole shoe, a shape of an outer circumferential surface of a rotor, and shapes and arrangement of permanent magnets.

Abstract: A method for generating a key stream according to an embodiment includes generating r round keys that are each N-dimensional integer vectors including elements of an integer set defined based on a prime number t, based on a random bit string, an encryption counter, and a secret key that is an N-dimensional integer vector consisting of elements of the integer set , generating a first round output vector x1 by performing a modular addition operation on an initial vector and a first round key RK1 of the r round keys with the prime number t as a modulus, and generating a key stream that is an N-dimensional integer vector consisting of elements of the integer set from the first round output vector x1 by using a second to r-th round keys of the r round keys, and one or more first round functions and a second round function.

Abstract: A NAND flash memory array, an operating method and a fabricating method of the same are provided. The NAND flash memory array has a cut-off gate line under a control gate in order to operate two cells having vertical channels independently with one control gate (i.e., a shared word line). The memory cell area is reduced considerably compared to the conventional vertical channel structure, and is better for high integration. A shared cut-off gate turn off is made during a programming operation and prevents programming the opposite cell by a self-boosting effect. It is possible to shield electrically with a shared word line (a control gate) during a reading operation, and minimizes the effect of storage condition of the opposite cell. Also, the NAND flash memory array can be fabricated by using the conventional CMOS process.

Abstract: A method is provided for fabricating a NAND flash memory array having vertical channels and sidewall gate structure and a fabricating method of the same. The NAND flash memory array has insulator strip structure and one or more semiconductor strips are next to the both sides of the insulator strip. The NAND flash memory array allows for an improvement of the integrity by decreasing the memory cell area by half and less, and solves the problems of the conventional three-dimensional structure regarding isolation between not only channels but also source/drain regions at the bottom of trenches. The method for fabricating the NAND flash memory array having a pillar structure uses the conventional CMOS process and an etching process with minimum masks, enables to cut down costs.

Abstract: A method is provided for fabricating a NAND flash memory array having vertical channels and sidewall gate structure and a fabricating method of the same. The NAND flash memory array has insulator strip structure and one or more semiconductor strips are next to the both sides of the insulator strip. The NAND flash memory array allows for an improvement of the integrity by decreasing the memory cell area by half and less, and solves the problems of the conventional three-dimensional structure regarding isolation between not only channels but also source/drain regions at the bottom of trenches. The method for fabricating the NAND flash memory array having a pillar structure uses the conventional CMOS process and an etching process with minimum masks, enables to cut down costs.

Abstract: A NAND flash memory array, an operating method and a fabricating method of the same are provided. The NAND flash memory array has a cut-off gate line under a control gate in order to operate two cells having vertical channels independently with one control gate (i.e., a shared word line). The memory cell area is reduced considerably compared to the conventional vertical channel structure, and is better for high integration. A shared cut-off gate turn off is made during a programming operation and prevents programming the opposite cell by a self-boosting effect. It is possible to shield electrically with a shared word line (a control gate) during a reading operation, and minimizes the effect of storage condition of the opposite cell. Also, the NAND flash memory array can be fabricated by using the conventional CMOS process.

Abstract: The present invention relates to a NAND flash memory array having vertical channels and sidewall gate structure and a fabricating method of the same. A NAND flash memory array of the present invention has insulator strip structure and one or more semiconductor strips are next to the both sides of the insulator strip. A NAND flash memory array of the present invention allows for an improvement of the integrity by decreasing the memory cell area by half and less, and solves the problems of the conventional three-dimensional structure regarding isolation between not only channels but also source/drain regions at the bottom of trenches. A method for fabricating the NAND flash memory array having a pillar structure, which uses the conventional CMOS process and an etching process with minimum masks, enables to cut down costs.

Abstract: An address encoding method and an address decoding circuit therefor is disclosed. In the address encoding method, a part of the outputs of address latches are made to designate circuits to be controlled, and the rest of the outputs are made to designate the relevant addresses of the circuits to be controlled. Based on this method, the constitution of the decoding circuit becomes simple.

Abstract: A polarotator pulse generator circuit is disclosed in which a sine-to-square converter converts a sine wave of AC power supply to a square wave, a clock synchronizer synchronizes the square ware of the sine-to-square converter with a high frequency clock and provides a loading instance control signal, a latch provides after synchronizing the data corresponding to the pulse width for the control of the polarotator with a clock being applied, a counter counts the clock with a start value determined by the data provided from the latch in accordance with an applied clock and loaded in accordance with the loading instance control signal, and a counter disable part stops the count until the next loading signal enters when a carry over occurs.

Abstract: A circuit for distinguishing the existence or non-existence of a signal at a satellite-broadcast receiver. The circuit includes an antenna adjusting part aimed toward the satellite after the satellite signal is tuned using a channel tuning stage driven by the output of a microcomputer. The level of the IF signal is detected by the IF signal AGC amplifier and the IF signal level detector. A video signal detecting stage detects the FM signal of the IF signal AGC amplifier output and the existence or nonexistence of the video signal is determined after audio/video signal processsing, and a channel displaying means, wherein the state of said video detecting part and the antenna position where video signal exists are displayed by on-sceen operations.