Patents by Inventor Seong Joo PARK

Seong Joo PARK has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240083058
    Abstract: The present disclosure provides an improvement to razor blade coating by a physical vapor deposition method, by forming a hard coating layer as a thin coating layer in which chromium boride, which is a nanocrystalline structure having high hardness, is dispersed in an amorphous mixture of chromium and boron, thereby improving the strength and hardness of the thin coating layer and securing the bonding force by chromium in the amorphous mixture between the hard coating layer and a blade substrate on which an edge of the razor blade is formed.
    Type: Application
    Filed: November 17, 2023
    Publication date: March 14, 2024
    Inventors: Min Joo PARK, Sung Hoon OH, Seong Won JEONG
  • Patent number: 11441484
    Abstract: A vertical-cavity surface-emitting laser device including a lower mirror, an upper mirror disposed over the lower mirror, an active region disposed between the lower mirror and the upper mirror, a lower n-type cladding layer disposed between the active region and the lower mirror, an upper n-type cladding layer disposed between the active region and the upper mirror, a heavily doped p-type semiconductor layer disposed between the active region and the upper n-type cladding layer, and a heavily doped n-type semiconductor layer disposed between the heavily doped p-type semiconductor layer and the upper n-type cladding layer to form a tunnel junction with the heavily doped p-type semiconductor layer.
    Type: Grant
    Filed: March 16, 2020
    Date of Patent: September 13, 2022
    Assignee: Seoul Viosys Co., Ltd.
    Inventor: Seong Joo Park
  • Publication number: 20200303904
    Abstract: A vertical-cavity surface-emitting laser device including a lower mirror, an upper mirror disposed over the lower mirror, an active region disposed between the lower mirror and the upper mirror, a lower n-type cladding layer disposed between the active region and the lower mirror, an upper n-type cladding layer disposed between the active region and the upper mirror, a heavily doped p-type semiconductor layer disposed between the active region and the upper n-type cladding layer, and a heavily doped n-type semiconductor layer disposed between the heavily doped p-type semiconductor layer and the upper n-type cladding layer to form a tunnel junction with the heavily doped p-type semiconductor layer.
    Type: Application
    Filed: March 16, 2020
    Publication date: September 24, 2020
    Inventor: Seong Joo PARK