Abstract: The present invention relates to a multi-layered transparent electrode having a metal nano hole pattern layer. The multi-layered transparent electrode may include a lower oxide layer, a metal nano hole pattern layer disposed on the lower oxide layer, and an upper oxide layer disposed on the metal nano hole pattern layer. By adjusting the pattern period and nano hole size of the metal nano hole pattern layer, transmittance of the multi-layered transparent electrode may be enhanced in a specific wavelength region through surface plasmon, which is a phenomena caused by the metal nanohole pattern layer. In addition, optimized sheet resistance may be implemented in a multi-layered transparent electrode having the metal nano hole pattern layer by adjusting the hole size. Thereby, electrical characteristics of a device employed the multi-layered transparent electrode may be enhanced.

Abstract: Disclosed are a method of fabricating a light emitting diode and a light emitting diode fabricated by the same. In the method of fabricating a light emitting diode, a convex-concave pattern is formed on a light emitting structure and a nanosphere layer is transferred to the convex-concave pattern, followed by dry etching to form a stepped surface structure having a plurality of nanobumps arranged on a surface thereof, and chemical coating to reduce surface energy of the stepped surface structure. The method can easily form a stepped surface structure having a plurality of nanobumps on a surface of a convex-concave pattern periodically arranged through nanosphere lithography and dry etching, thereby simplifying the fabrication process while improving production yield.

Abstract: The present invention discloses a nitride semiconductor light emitting device with improved light efficiency. The nitride semiconductor light emitting device includes a n-type nitride layer and p-type nitride layer, an active layer disposed between the n-type and p-type nitride layers and with a multiple quantum well structure wherein a plurality of quantum well layers and a plurality of quantum barrier layers are stacked alternatively in the active layer, and a superlattice layer between the active layer and the p-type nitride layer with asymmetric structure. Herein, a thickness of a well layers gradually increases from the p-type nitride layer to the active layer and the height of the barrier layers gradually increases from the active layer to the p-type nitride layer and therefore, an injection efficiency of a hole supplied from p-type nitride layer to an active layer is increased.

Abstract: Disclosed is a cleaning robot having an expanded cleaning territory. The cleaning robot of the present invention comprises: a platform in which at least one corner of the exterior thereof has an angle of less than 90°; a first driving wheel of which the central axis is attached to the bottom portion of the platform at a predetermined first angle (?) and a predetermined second angle (??) with respect to the forward direction of the platform; and a second driving wheel of which the central axis is attached to the bottom portion of the platform at the predetermined second angle (??) with respect to the forward direction of the platform.

Abstract: A bumper assembly of a mobile robot includes a sliding member which is installed to be movable in front and rear directions with respect to a robot body, a first elastic member which is coupled to the sliding member and presses the sliding member in the front direction, a first sensor which senses a movement of the sliding member when the sliding member moves in the rear direction, a front plate which is disposed at a front side of the sliding member, rotatably coupled to the sliding member, and moves integrally with the sliding member when the sliding member moves in the front and rear directions, and a second sensor which senses a rotation of the front plate when the front plate rotates.

Abstract: A semiconductor light emitting device is provided including a first conductivity-type semiconductor layer, an active layer including at least one quantum barrier layer made of InxGa(1-x)N, wherein 0?x<y, and at least one quantum well layer made of InyGa(1-y)N, wherein 0<y?1, disposed therein, and a second conductivity-type semiconductor layer, wherein the quantum barrier layer includes first and second graded layers disposed in order toward the first conductivity-type semiconductor layer. The first graded layer contains indium whose content increases in a direction towards the second conductivity-type semiconductor layer, and the second graded layer contains indium whose content decreased in a direction toward the second conductivity-type semiconductor layer.

Abstract: There is provided a nitride semiconductor light emitting device including an active layer of a multi quantum well structure, the nitride semiconductor light emitting device including: a substrate; and a buffer layer, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially stacked on the substrate, wherein the active layer is formed of a multi quantum well structure where a plurality of barrier layers and a plurality of well layers are arranged alternately with each other, and at least one of the plurality of barrier layers includes a first barrier layer including a p-doped barrier layer doped with a p-dopant and an undoped barrier layer.

Abstract: Disclosed herein is a light emitting diode. The light emitting diode includes a substrate, an n-type semiconductor layer placed on the substrate, an active layer placed on the n-type semiconductor layer, a p-type semiconductor layer placed on the active layer, a reflective layer placed on the p-type semiconductor layer, an n-type electrode electrically connected to the n-type semiconductor layer, a p-type electrode placed on the reflective layer; and a first patterned magnetic structure placed on the reflective layer, and separated from the p-type electrode. The light emitting diode can provide improved internal quantum efficiency using the patterned magnetic structure.

Abstract: The present disclosure provides a method for fabricating a substrate for transfer printing using a concave-convex structure and a substrate for transfer printing fabricated thereby. The method includes preparing a handling substrate having a concave-convex structure formed thereon; forming a sacrificial layer along the concave-convex structure on the handling substrate; coating a polymer on the handling substrate having the sacrificial layer formed thereon to form a polymer substrate having bumps filling a concave portion of the concave-convex structure; and removing the sacrificial layer from the handling to substrate. The substrate for transfer printing includes a handling substrate having a concave-convex structure formed thereon; and a polymer substrate placed on the concave-convex structure and having bumps filling a concave portion of the concave-convex structure of the handling substrate.

Abstract: The present invention relates to a mobile robot, in which a wheel is mounted on a robot body in an elevatable structure.

Abstract: Disclosed herein are a ZnO film structure and a method of forming the same. Dislocation density of a ZnO film grown through epitaxial lateral overgrowth (ELOG) is minimized. In order to block a chemical reaction between the ZnO film and a mask layer at the time of performing the ELOG, a material of the mask layer is AlF3, NaF2, SrF, or MgF2. Therefore, the chemical reaction between ZnO and the mask layer is blocked and a transfer of dislocation from a substrate is also blocked.

Abstract: A method for fabricating a substrate for transfer printing using a concave-convex structure and a substrate for transfer printing fabricated thereby. The method includes preparing a handling substrate having a concave-convex structure formed thereon; forming a sacrificial layer along the concave-convex structure on the handling substrate; coating a polymer on the handling substrate having the sacrificial layer formed thereon to form a polymer substrate having bumps filling a concave portion of the concave-convex structure; and removing the sacrificial layer from the handling substrate. The substrate includes a handling substrate having a concave-convex structure formed thereon; and a polymer substrate placed on the concave-convex structure and having bumps filling a concave portion of the concave-convex structure of the handling substrate.

Abstract: A light emitting diode including a magnetic structure and a method of fabricating the same are disclosed. The magnetic structure composed of passivation layers and a magnetic layer is disposed inside a luminous structure composed of an active layer and a semiconductor layer. In the light emitting diode, the magnetic structure including the magnetic layer is disposed on a side surface of the active layer to improve recombination rate of charge carriers for light emission by increasing influence of a magnetic field applied to the active layer. In addition, the light emitting diode according to the present invention allows change in position of the magnetic structure including the magnetic layer depending upon an etched shape of the luminous structure, thereby realizing various magnetic field distributions.

Abstract: Disclosed herein is a light emitting diode. The light emitting diode includes a substrate, an n-type semiconductor layer placed on the substrate, an active layer placed on the n-type semiconductor layer, a p-type semiconductor layer placed on the active layer, a reflective layer placed on the p-type semiconductor layer, an n-type electrode electrically connected to the n-type semiconductor layer, a p-type electrode placed on the reflective layer; and a first patterned magnetic structure placed on the reflective layer, and separated from the p-type electrode. The light emitting diode can provide improved internal quantum efficiency using the patterned magnetic structure.

Abstract: Disclosed herein are a ZnO film structure and a method of forming the same. Dislocation density of a ZnO film grown through epitaxial lateral overgrowth (ELOG) is minimized. In order to block a chemical reaction between the ZnO film and a mask layer at the time of performing the ELOG, a material of the mask layer is AlF3, NaF2, SrF, or MgF2. Therefore, the chemical reaction between ZnO and the mask layer is blocked and a transfer of dislocation from a substrate is also blocked.

Abstract: A semiconductor light emitting device is provided including a first conductivity-type semiconductor layer, an active layer including at least one quantum barrier layer made of InxGa(1-x)N, wherein 0?x<y, and at least one quantum well layer made of InyGa(1-y)N, wherein 0<y?1, disposed therein, and a second conductivity-type semiconductor layer, wherein the quantum barrier layer includes first and second graded layers disposed in order toward the first conductivity-type semiconductor layer. The first graded layer contains indium whose content increases in a direction towards the second conductivity-type semiconductor layer, and the second graded layer contains indium whose content decreased in a direction toward the second conductivity-type semiconductor layer.

Abstract: The present invention discloses a nitride semiconductor light emitting device with improved light efficiency. The nitride semiconductor light emitting device includes a n-type nitride layer and p-type nitride layer, an active layer disposed between the n-type and p-type nitride layers and with a multiple quantum well structure wherein a plurality of quantum well layers and a plurality of quantum barrier layers are stacked alternatively in the active layer, and a superlattice layer between the active layer and the p-type nitride layer with asymmetric structure. Herein, a thickness of a well layers gradually increases from the p-type nitride layer to the active layer and the height of the barrier layers gradually increases from the active layer to the p-type nitride layer and therefore, an injection efficiency of a hole supplied from p-type nitride layer to an active layer is increased.

Abstract: The present invention relates to a slip detection apparatus and method for a mobile robot, and more particularly, to a slip detection apparatus and method for a mobile robot, which not only use a plurality of rotation detection sensors to detect a lateral slip angle and lateral slip direction, but also analyze the amount of change in an image and detect the blocked degree of an image input unit to determine the quality of an input image, and detect the occurrence of a frontal slip to precisely detect the type of slip, direction of the slip, and the rotation angle, and, on the basis of the latter, to enable the mobile robot to move away from and avoid slip regions, and to reassume the precise position thereof.

Abstract: The present invention relates to a map generating and updating method for mobile robot position recognition, and more specifically relates to a map generating and updating method for mobile robot position recognition, whereby position recognition error can be minimized by registering landmarks extracted during map generation and landmarks extracted on the basis of the probable error in inferred landmarks, calculating the accuracy of landmarks pre-registered during map generation, and adjusting the level of landmarks of low accuracy or removing landmarks which have been registered erroneously.

Abstract: The present disclosure provides a light emitting diode and a method of manufacturing the same. The light emitting diode includes a graphene layer on a second conductive semiconductor layer and a plurality of metal nanoparticles formed on some region of the graphene layer, whereby adhesion between the second conductive semiconductor layer comprised of an inorganic material and the graphene layer is enhanced, thereby securing stability and reliability of the light emitting diode. In addition, the light emitting diode allows uniform spreading of electric current, thereby allowing stable emission of light through a surface area of the light emitting diode.