Abstract: Various embodiments of the present disclosure relate to a non-volatile memory device including a sense amplifier and an operation method thereof. The non-volatile memory device may include: a memory cell array comprising a plurality of memory cells; and the sense amplifier configured to read data of the plurality of memory cells and output the read data. The sense amplifier may include: a first stage sense amplifier configured to sense a voltage difference between a reference voltage and a voltage of a bit line connected to at least one memory cell among the plurality of memory cells, and perform a primary amplification of the sensed voltage difference; and a second stage sense amplifier configured to perform a secondary amplification of a first result of the primary amplification and output a second result of the secondary amplification.

Abstract: An automated method for generating a prosthesis from a 3D scan data, the method includes automatically extracting tooth information of a tooth included in the 3D scan data from the 3D scan data, automatically extracting a margin line of a prepared tooth, generating a plurality of two dimensional (“2D”) images including the prepared tooth and an adjacent tooth adjacent to the prepared tooth, automatically generating a 3D temporary prosthesis data based on the plurality of 2D images and deforming a single tooth model corresponding to the prepared tooth using the margin line and the 3D temporary prosthesis data to generate a 3D prosthesis data.

Abstract: A busbar unit electrically connected to a motor comprising a stator around which a coil is wound includes: a first terminal including a first body and a first terminal part protruding from an upper portion of the first body and electrically connected to the coil; a first holder configured to support the first terminal such that the first terminal part is exposed to an outside of the busbar unit; and a second holder disposed on an upper portion of the first holder and configured to press the coil against the first terminal part.

Abstract: A road surface recognition method may include extracting first point cloud data in a front road surface region of a vehicle from point cloud data generated by LiDAR of the vehicle, generating a point cloud map by use of a local map and the first point cloud data, determining a predicted driving route of the vehicle based on motion-related data of the vehicle; and generating a road surface height profile of the predicted driving route based on the point cloud map and the predicted driving route.

Abstract: Disclosed is a small lens system including a first lens, a second lens, a third lens, a fourth lens, and a fifth lens sequentially arranged from an object, wherein the clear aperture of an object-side surface L1S1_CA (clear aperture) and the clear aperture of an image-side surface L1S2_CA (clear aperture) of the first lens satisfy 1<L1S2_CA/L1S1_CA<1.2.

Abstract: A composition for preventing or treating an infection or disease caused by enterotoxigenic Bacteroides fragilis includes a Siphoviridae bacteriophage (Bac-FRP-4) having an ability to lyse the enterotoxigenic Bacteroides fragilis cells and a pharmaceutically acceptable carrier. A method for preventing or treating an infection or disease caused by enterotoxigenic Bacteroides fragilis includes administering to a subject a Siphoviridae bacteriophage and lysing the enterotoxigenic Bacteroides fragilis cells by the Siphoviridae bacteriophage.

Abstract: A composition for preventing or treating an infection or disease caused by enterotoxigenic Bacteroides fragilis includes a Siphoviridae bacteriophage (Bac-FRP-5) having an ability to lyse the enterotoxigenic Bacteroides fragilis cells and a pharmaceutically acceptable carrier. A method for preventing or treating an infection or disease caused by enterotoxigenic Bacteroides fragilis includes administering to a subject a Siphoviridae bacteriophage and lysing the enterotoxigenic Bacteroides fragilis cells by the Siphoviridae bacteriophage.

Abstract: An eFuse cell is provided. The eFuse cell may include a first PMOS transistor and a first NMOS transistor configured to receive a programmed state selection (BLOWB) signal, a second PMOS transistor and a second NMOS transistor configured to receive a write word line bar (WWLB) for a program operation, a first read NMOS transistor and a second read NMOS transistor configured to receive a read word line (RWL) for a read operation, a program transistor configured to control a program current to flow for a fusing operation, and an eFuse connected between the first read NMOS transistor and the second read NMOS transistor.

Abstract: A composition for preventing or treating an infection or disease caused by enterotoxigenic Bacteroides fragilis includes a Siphoviridae bacteriophage (Bac-FRP-3) having an ability to lyse the enterotoxigenic Bacteroides fragilis cells and a pharmaceutically acceptable carrier. A method for preventing or treating an infection or disease caused by enterotoxigenic Bacteroides fragilis includes administering to a subject a Siphoviridae bacteriophage and lysing the enterotoxigenic Bacteroides fragilis cells by the Siphoviridae bacteriophage.

Abstract: Provided is a high voltage driving device including a housing and a cathode, an anode, and an insulation structure, which are disposed in the housing. Here, the cathode and the anode are spaced apart from each other with the insulation structure therebetween. Also, the insulation structure includes a first solid insulator disposed adjacent to the cathode and a second solid insulator disposed adjacent to the anode. Also, the first solid insulator has first volumetric resistivity less than second volumetric resistivity of the second solid insulator, and the first solid insulator contacts the cathode.

Abstract: A laser device for skin treatment includes: a laser generating unit including a diode laser for generating a pulse capable of being varied to a pulse width of 100 picoseconds (ps) to 2000 ps by a dedicated driver having a rising time of 100 ps or less and a pulse width adjustment unit for adjusting a width of the pulse generated by the diode laser, the laser generating unit configured to generate a single or a plurality of pulses; and a laser amplifying unit including a pumping lamp and a single or a plurality of amplification mediums having a rod structure for absorbing light energy from the pumping lamp, wherein, in the laser amplifying unit, a pulse supplied from the laser generating unit passes through at least one of the single or a plurality of amplification mediums a plurality of times inward from the outside and is gradually amplified.

Abstract: A display device includes an active region including pixels receiving data signals through data lines, and a non-active region on a side of the active region in a first direction and including a pad portion. The display device includes non-active fan-out wirings in the non-active region and connected to the pad portion, signal wirings extending in the first direction across the active region and connected to the pixels, and connection wirings passing through the active region and connecting some of the non-active fan-out wirings and some of the signal wirings. Each of the connection wirings includes first and second extension portions made of a first conductive layer, and a third extension portion made of a second conductive layer different from the first conductive layer. The first and second extension portions extend in the first direction, and the third extension portion extends in a second direction intersecting the first direction.

Abstract: A display device includes a substrate, a first active pattern, a first gate electrode, a second active pattern, a second gate electrode, a first connecting pattern, and a second connecting pattern. The first connecting pattern is disposed on the second active pattern and is electrically connected to the first gate electrode, and the second connecting pattern is disposed on the first connecting pattern and is electrically connected to the first connecting pattern and the second active pattern.

Abstract: A display device includes a display unit including a plurality of emission areas, a plurality of touch electrodes that sense a touch, a plurality of code patterns that cover a part of a front surface of at least one of the plurality of touch electrodes, and a plurality of light-blocking dummy patterns formed on some of the plurality of touch electrodes on which the plurality of code patterns is not formed. Each of the touch electrodes includes at least one portion disposed between adjacent emission areas among the plurality of emission areas. A thickness of the plurality of code patterns is different from a thickness of the light-blocking dummy patterns, and a light-blocking rate of the plurality of code patterns is different from a light-blocking rate of the light-blocking dummy patterns.

Abstract: A display device, includes: a scan driver configured to sequentially supply scan signals having a turn-on level to the first scan line and the second scan line during a first period and to concurrently supply scan signals having a turn-on level to the first scan line and the second scan line during a second period after the first period, wherein: a mask period corresponds to a difference between a start point of the second period and a start point of the first period in a next frame period, a first frame period and a second frame period have different mask periods, a third frame period between the first frame period and the second frame period has a same mask period as the first frame period, and a fourth frame period between the first frame period and the second frame period has a same mask period as the second frame period.

Abstract: An eFuse cell is provided. The eFuse cell may include a first PMOS transistor and a first NMOS transistor configured to receive a programmed state selection (BLOWB) signal, a second PMOS transistor and a second NMOS transistor configured to receive a write word line bar (WWLB) for a program operation, a first read NMOS transistor and a second read NMOS transistor configured to receive a read word line (RWL) for a read operation, a program transistor configured to control a program current to flow for a fusing operation, and an eFuse connected between the first read NMOS transistor and the second read NMOS transistor.

Abstract: A display device includes a first active pattern, a first conductive pattern including a gate electrode overlapping the first active pattern, a first gate line overlapping the first active pattern and extending in a first direction, and a second gate line extending in the first direction, a second conductive pattern disposed on the first conductive pattern and including a third gate line extending in the first direction and a fourth gate line extending in the first direction, a second active pattern disposed on the second conductive pattern and including a material different from a material of the first active pattern, and a third conductive pattern disposed on the second active pattern and including a first upper electrode overlapping the third gate line and connected to the third gate line, and a second upper electrode overlapping the fourth gate line and connected to the fourth gate line.

Abstract: A display device includes a plurality of emission areas that emit light, a plurality of touch electrodes disposed in a light blocking area surrounding the plurality of emission areas, in which the touch electrodes sense a touch, a first insulating layer disposed on the plurality of touch electrodes, and a plurality of light blocking parts disposed on the first insulating layer and overlapping the plurality of touch electrodes. A part of the plurality of light blocking parts includes a code pattern formed by an insertion portion inserted into the first insulating layer and overlapping the plurality of touch electrodes, and another part of the plurality of light blocking parts includes a non-code pattern formed by not having the insertion portion.

Abstract: The present disclosure suggests a scheme of uniformly embodying the functions of all equipment (RAN, core) including an RAN in addition to the core of 5G as NFs via realization of a detailed technique that evolves the function of RAN equipment to a 5G architecture and embodies the same as an NF.

Abstract: Various embodiments of the present disclosure relate to a non-volatile memory device including a sense amplifier and an operation method thereof. The non-volatile memory device may include: a memory cell array comprising a plurality of memory cells; and the sense amplifier configured to read data of the plurality of memory cells and output the read data. The sense amplifier may include: a first stage sense amplifier configured to sense a voltage difference between a reference voltage and a voltage of a bit line connected to at least one memory cell among the plurality of memory cells, and perform a primary amplification of the sensed voltage difference; and a second stage sense amplifier configured to perform a secondary amplification of a first result of the primary amplification and output a second result of the secondary amplification.