Patents by Inventor Seong Ran Jeon
Seong Ran Jeon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10662511Abstract: A nitride semiconductor light-emitting device comprises a substrate; a first conductivity type semiconductor layer formed on the substrate; a high-resistance semiconductor layer formed on the first conductivity type semiconductor layer; an active layer formed on the high-resistance semiconductor layer and having multiple quantum wells; and a second conductivity type semiconductor layer formed on the active layer. A first v-pit structure is formed between the high-resistance semiconductor layer and the first conductivity type semiconductor layer, and a second v-pit structure is formed between the active layer and the second conductivity type semiconductor layer. The second v-pit structure is formed such that a lowest part of the second conductivity type semiconductor layer contacts a lowest quantum well of the multiple quantum wells of the active layer through the second v-pit structure.Type: GrantFiled: June 30, 2015Date of Patent: May 26, 2020Assignee: KOREA PHOTONICS TECHNOLOGY INSTITUTEInventors: Seung-Jae Lee, Sung-Chul Choi, Jong-Hyeob Baek, Seong-Ran Jeon, Sang-Mook Kim, Tae Hoon Chung
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Publication number: 20180069153Abstract: A nitride semiconductor light-emitting device and a method for manufacturing same for improving the electrostatic discharge (ESD) characteristics of the nitride semiconductor light-emitting device. The light-emitting device includes an active layer formed flat using a low conductivity material, on a first conductive semiconductor layer having a v-pit structure on the upper surface thereof, and a second conductive semiconductor layer, or has a v-pit structure on a junction surface between a second conductive semiconductor layer and an active layer formed flat using a low conductivity material on a first conductive semiconductor layer having a v-pit structure on the upper surface thereof. Thus, a v-pit area has a thickness equal to or greater than a critical thickness and thus has very low conductivity, thereby preventing the flow of a current.Type: ApplicationFiled: June 30, 2015Publication date: March 8, 2018Applicant: KOREA PHOTONICS TECHNOLOGY INSTITUTEInventors: Seung-Jae LEE, Sung-Chul CHOI, Jong-Hyeob BAEK, Seong-Ran JEON, Sang-Mook KIM, Tae Hoon CHUNG
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Patent number: 9508897Abstract: The present invention relates to a multi-luminous element and a method for manufacturing the same. The present invention provides the multi-luminous element comprising: a buffer layer disposed on a substrate; a first type semiconductor layer disposed on the buffer layer; a first active layer which is disposed on the first type semiconductor layer and is patterned to expose a part of the first type semiconductor layer; a second active layer disposed on the first type semiconductor layer which is exposed by the first active layer; and a second type semiconductor layer disposed on the first active layer and the second active layer, the first and second active layers being repeatedly disposed in the horizontal direction, and the method for manufacturing the same. The multi-luminous element according to the present invention reduces loss of light emitting efficiency and can generate multi-wavelength light by repeatedly disposing the first and second active layers in the horizontal direction.Type: GrantFiled: May 15, 2014Date of Patent: November 29, 2016Assignee: KOREA PHOTONICS TECHNOLOGY INSTITUTEInventors: Seong Ran Jeon, Jae Bum Kim, Seung Jae Lee
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Patent number: 9287444Abstract: Devices having nitride quantum dots and methods of manufacturing the same are provided. The device includes a nitride group material substrate, a plurality of nanorods that are formed on the nitride group material layer and are separated from each other, and a nitride quantum dot on each of the nanorods. A pyramid-shaped layer may be further formed between each of the nanorods and the nitride quantum dot. The nanorods and the nitride quantum dot are covered by an upper contact layer. A plurality of nitride quantum dots may be formed on each of the nanorods and the respective nitride quantum dots may have different sizes.Type: GrantFiled: September 22, 2014Date of Patent: March 15, 2016Assignees: SAMSUNG ELECTRONICS CO., LTD., KOREA PHOTONICS TECHNOLOGY INSTITUTEInventors: Jae-soong Lee, Young-ho Song, Seong-ran Jeon, Seung-hwan Kim
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Publication number: 20150263225Abstract: Devices having nitride quantum dots and methods of manufacturing the same are provided. The device includes a nitride group material substrate, a plurality of nanorods that are formed on the nitride group material layer and are separated from each other, and a nitride quantum dot on each of the nanorods. A pyramid-shaped layer may be further formed between each of the nanorods and the nitride quantum dot. The nanorods and the nitride quantum dot are covered by an upper contact layer. A plurality of nitride quantum dots may be formed on each of the nanorods and the respective nitride quantum dots may have different sizes.Type: ApplicationFiled: September 22, 2014Publication date: September 17, 2015Applicants: KOREA PHOTONICS TECHNOLOGY INSTITUTE, SAMSUNG ELECTRONICS CO., LTD.Inventors: Jae-soong LEE, Young-ho SONG, Seong-ran JEON, Seung-hwan KIM
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Publication number: 20140246649Abstract: The present invention relates to a multi-luminous element and a method for manufacturing the same. The present invention provides the multi-luminous element comprising: a buffer layer disposed on a substrate; a first type semiconductor layer disposed on the buffer layer; a first active layer which is disposed on the first type semiconductor layer and is patterned to expose a part of the first type semiconductor layer; a second active layer disposed on the first type semiconductor layer which is exposed by the first active layer; and a second type semiconductor layer disposed on the first active layer and the second active layer, the first and second active layers being repeatedly disposed in the horizontal direction, and the method for manufacturing the same. The multi-luminous element according to the present invention reduces loss of light emitting efficiency and can generate multi-wavelength light by repeatedly disposing the first and second active layers in the horizontal direction.Type: ApplicationFiled: May 15, 2014Publication date: September 4, 2014Applicant: KOREA PHOTONICS TECHNOLOGY INSTITUTEInventors: Seong Ran Jeon, Jae Bum Kim, Seung Jae Lee
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Patent number: 8765505Abstract: The present invention relates to a multi-luminous element and a method for manufacturing the same. The present invention provides the multi-luminous element comprising: a buffer layer disposed on a substrate; a first type semiconductor layer disposed on the buffer layer; a first active layer which is disposed on the first type semiconductor layer and is patterned to expose a part of the first type semiconductor layer; a second active layer disposed on the first type semiconductor layer which is exposed by the first active layer; and a second type semiconductor layer disposed on the first active layer and the second active layer, the first and second active layers being repeatedly disposed in the horizontal direction, and the method for manufacturing the same.Type: GrantFiled: March 15, 2011Date of Patent: July 1, 2014Assignee: Korea Photonics Technology InstituteInventors: Seong Ran Jeon, Jae Bum Kim, Seung Jae Lee
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Patent number: 8759815Abstract: The disclosure relates to a nitride based semiconductor light emitting device with improved luminescence efficiency by increasing a recombination rate of electrons and holes contributing to luminescence, which results from matching the spatial distribution of electron and hole wave functions. The nitride based semiconductor light emitting device according to the present invention includes an n-type nitride layer, an active layer formed on the n-type nitride layer, and a p-type nitride layer formed on the active layer. At this stage, a strain control layer, and the at least one layer has a larger energy bandgap than a quantum well layer in the active layer. The strain control layer is disposed in an area where the quantum well layer of the active layer is formed. Moreover, an energy bandgap of the strain control layer is less than that of quantum barrier of the active layer.Type: GrantFiled: September 1, 2011Date of Patent: June 24, 2014Assignee: Korea Photonics Technology InstituteInventors: Seong Ran Jeon, Young Ho Song, Jae Bum Kim, Young Woo Kim, Woo Young Cheon, Jin Hong Kim
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Publication number: 20130299775Abstract: The disclosure relates to a nitride based semiconductor light emitting device with improved luminescence efficiency by increasing a recombination rate of electrons and holes contributing to luminescence, which results from matching the spatial distribution of electron and hole wave functions. The nitride based semiconductor light emitting device according to the present invention includes an n-type nitride layer, an active layer formed on the n-type nitride layer, and a p-type nitride layer formed on the active layer. At this stage, a strain control layer, and the at least one layer has a larger energy bandgap than a quantum well layer in the active layer. The strain control layer is disposed in an area where the quantum well layer of the active layer is formed. Moreover, an energy bandgap of the strain control layer is less than that of quantum barrier of the active layer.Type: ApplicationFiled: September 1, 2011Publication date: November 14, 2013Applicant: KOREA PHOTONICS TECHNOLOGY INSTITUTEInventors: Seong Ran Jeon, Young Ho Song, Jae Bum Kim, Young Woo Kim, Woo Young Cheon, Jin Hong Kim
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Publication number: 20120319081Abstract: The present invention relates to a multi-luminous element and a method for manufacturing the same. The present invention provides the multi-luminous element comprising: a buffer layer disposed on a substrate; a first type semiconductor layer disposed on the buffer layer; a first active layer which is disposed on the first type semiconductor layer and is patterned to expose a part of the first type semiconductor layer; a second active layer disposed on the first type semiconductor layer which is exposed by the first active layer; and a second type semiconductor layer disposed on the first active layer and the second active layer, the first and second active layers being repeatedly disposed in the horizontal direction, and the method for manufacturing the same.Type: ApplicationFiled: March 15, 2011Publication date: December 20, 2012Applicant: KOREA PHOTONICS TECHNOLOGY INSTITUTEInventors: Seong Ran Jeon, Jae Bum Kim, Seung Jae Lee