Patents by Inventor Seongmin CHOO
Seongmin CHOO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11810947Abstract: A semiconductor device includes a substrate, a bottom electrode on the substrate, a first support layer on the substrate next to a sidewall of the bottom electrode, a dielectric layer covering the sidewall and a top surface of the bottom electrode, and a top electrode on the dielectric layer. The bottom electrode includes a first part having a plurality of protrusions that protrude from a sidewall of the first part. The first part of the bottom electrode may be on the first support layer.Type: GrantFiled: November 29, 2021Date of Patent: November 7, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Hyukwoo Kwon, Ha-young Yi, Byoungdeog Choi, Seongmin Choo
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Publication number: 20220085150Abstract: A semiconductor device includes a substrate, a bottom electrode on the substrate, a first support layer on the substrate next to a sidewall of the bottom electrode, a dielectric layer covering the sidewall and a top surface of the bottom electrode, and a top electrode on the dielectric layer. The bottom electrode includes a first part having a plurality of protrusions that protrude from a sidewall of the first part. The first part of the bottom electrode may be on the first support layer.Type: ApplicationFiled: November 29, 2021Publication date: March 17, 2022Applicant: Samsung Electronics Co., Ltd.Inventors: Hyukwoo KWON, Ha-young YI, Byoungdeog CHOI, Seongmin CHOO
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Patent number: 11211447Abstract: A semiconductor device includes a substrate, a bottom electrode on the substrate, a first support layer on the substrate next to a sidewall of the bottom electrode, a dielectric layer covering the sidewall and a top surface of the bottom electrode, and a top electrode on the dielectric layer. The bottom electrode includes a first part having a plurality of protrusions that protrude from a sidewall of the first part. The first part of the bottom electrode may be on the first support layer.Type: GrantFiled: February 22, 2019Date of Patent: December 28, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Hyukwoo Kwon, Ha-Young Yi, Byoungdeog Choi, Seongmin Choo
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Patent number: 11114398Abstract: An integrated circuit (IC) device includes a lower electrode formed on a substrate, and an upper support structure disposed around the lower electrode and supporting the lower electrode. The upper support structure includes an upper support pattern surrounding the lower electrode and extending in a lateral direction parallel to the substrate, the upper support pattern having a hole through which the lower electrode passes, and an upper spacer support pattern between the upper support pattern and the lower electrode inside the hole and having an outer sidewall in contact with the upper support pattern and an inner sidewall in contact with the lower electrode, wherein a width of the upper spacer support pattern in the lateral direction decreases in a direction toward the substrate. To manufacture an IC device, an upper support pattern is formed on a substrate. An upper spacer support film is formed to cover a sidewall and a top surface of the upper support pattern.Type: GrantFiled: April 14, 2020Date of Patent: September 7, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dongwoo Kim, Hyukwoo Kwon, Seongmin Choo, Byoungdeog Choi
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Patent number: 10998318Abstract: A semiconductor memory device includes lower electrodes, each of the lower electrodes surrounding an inner space, an upper support layer on top surfaces of the lower electrodes, the upper support layer being on the inner spaces surrounded by the lower electrodes, and an upper electrode on the upper support layer, the upper electrode filling first and second regions, the second region penetrating the upper support layer, and the first region extending from the second region into between the lower electrodes. Each of the lower electrodes includes a first portion overlapping with the first region, a top surface of the first portion being exposed by the upper support layer, and a second portion covered by the upper support layer, a top surface of the second portion being in contact with the upper support layer.Type: GrantFiled: January 25, 2019Date of Patent: May 4, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Seongmin Choo, Hyukwoo Kwon, Jangseop Kim
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Publication number: 20210082844Abstract: An integrated circuit (IC) device includes a lower electrode formed on a substrate, and an upper support structure disposed around the lower electrode and supporting the lower electrode. The upper support structure includes an upper support pattern surrounding the lower electrode and extending in a lateral direction parallel to the substrate, the upper support pattern having a hole through which the lower electrode passes, and an upper spacer support pattern between the upper support pattern and the lower electrode inside the hole and having an outer sidewall in contact with the upper support pattern and an inner sidewall in contact with the lower electrode, wherein a width of the upper spacer support pattern in the lateral direction decreases in a direction toward the substrate. To manufacture an IC device, an upper support pattern is formed on a substrate. An upper spacer support film is formed to cover a sidewall and a top surface of the upper support pattern.Type: ApplicationFiled: April 14, 2020Publication date: March 18, 2021Inventors: Dongwoo Kim, Hyukwoo Kwon, Seongmin Choo, Byoungdeog Choi
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Patent number: 10950607Abstract: A semiconductor memory device includes lower electrodes, each of the lower electrodes surrounding an inner space, an upper support layer on top surfaces of the lower electrodes, the upper support layer being on the inner spaces surrounded by the lower electrodes, and an upper electrode on the upper support layer, the upper electrode filling first and second regions, the second region penetrating the upper support layer, and the first region extending from the second region into between the lower electrodes. Each of the lower electrodes includes a first portion overlapping with the first region, a top surface of the first portion being exposed by the upper support layer, and a second portion covered by the upper support layer, a top surface of the second portion being in contact with the upper support layer.Type: GrantFiled: January 25, 2019Date of Patent: March 16, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Seongmin Choo, Hyukwoo Kwon, Jangseop Kim
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Publication number: 20200027947Abstract: A semiconductor device includes a substrate, a bottom electrode on the substrate, a first support layer on the substrate next to a sidewall of the bottom electrode, a dielectric layer covering the sidewall and a top surface of the bottom electrode, and a top electrode on the dielectric layer. The bottom electrode includes a first part having a plurality of protrusions that protrude from a sidewall of the first part. The first part of the bottom electrode may be on the first support layer.Type: ApplicationFiled: February 22, 2019Publication date: January 23, 2020Applicant: Samsung Electronics Co., Ltd.Inventors: Hyukwoo Kwon, Ha-Young YI, Byoungdeog CHOI, Seongmin CHOO
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Publication number: 20200006345Abstract: A semiconductor memory device includes lower electrodes, each of the lower electrodes surrounding an inner space, an upper support layer on top surfaces of the lower electrodes, the upper support layer being on the inner spaces surrounded by the lower electrodes, and an upper electrode on the upper support layer, the upper electrode filling first and second regions, the second region penetrating the upper support layer, and the first region extending from the second region into between the lower electrodes. Each of the lower electrodes includes a first portion overlapping with the first region, a top surface of the first portion being exposed by the upper support layer, and a second portion covered by the upper support layer, a top surface of the second portion being in contact with the upper support layer.Type: ApplicationFiled: January 25, 2019Publication date: January 2, 2020Inventors: Seongmin CHOO, Hyukwoo KWON, Jangseop KIM