Abstract: A vertical nonvolatile memory device may include a peripheral circuit portion including a memory cell driving circuit and connection wiring; a first hydrogen diffusion barrier layer above the peripheral circuit portion; a first insulating layer above the first hydrogen diffusion barrier layer; a common source line layer above the first insulating layer; a second hydrogen diffusion barrier layer above the first insulating layer; and a memory cell stack structure above the common source line layer and the second hydrogen diffusion barrier layer.

Abstract: A non-volatile memory device comprises a memory cell region including a plurality of cell transistors, a first-type semiconductor substrate including a peripheral circuit region including circuits configured to control the plurality of cell transistors, and a plurality of pass transistors on the peripheral circuit region of the semiconductor substrate, wherein the peripheral circuit region includes a first region and a second region which are doped to a depth at an upper portion of the semiconductor substrate while being insulated from each other by an implant region, wherein the first region is a second type different from the first type, and includes a first doped region, and a first well region beneath the first doped region and configured to have a higher doping concentration than the first doped region, wherein the second region is the first type, and includes a second doped region, and a second well region beneath the second doped region and configured to have a higher doping concentration than the seco

Abstract: There is provided a thin film transistor (TFT) capable of improving electron mobility and minimizing the occurrence of hysteresis due to traps. The TFT includes a channel layer and a gate insulating layer, wherein the channel layer is made of an oxide semiconductor. In the TFT, the gate insulating layer includes one or more first dielectric layer and a second dielectric layer, and the first dielectric layer has a dielectric constant different from that of the second dielectric layer.