Abstract: A semiconductor memory device includes data pads, wordlines, memory cells, global input-output lines, and intra-bank switches. The wordlines extend in a row direction and are arranged in a column direction. The wordlines are grouped into wordline groups such that each wordline group includes wordlines adjacent in the column direction. A selection wordline is selected based on a row address. The global input-output lines extend in the column direction and are arranged in the row direction to transfer data between the data pads and the memory cells. The global input-output lines are cut into line segment groups respectively corresponding to the wordline groups. The intra-bank switches control, based on the row address, electrical connections between two line segment groups among the line segment groups, where the two line segment groups are adjacent in the column direction and included in one memory bank.

Abstract: A semiconductor memory device includes data pads, wordlines, memory cells, global input-output lines, and intra-bank switches. The wordlines extend in a row direction and are arranged in a column direction. The wordlines are grouped into wordline groups such that each wordline group includes wordlines adjacent in the column direction. A selection wordline is selected based on a row address. The global input-output lines extend in the column direction and are arranged in the row direction to transfer data between the data pads and the memory cells. The global input-output lines are cut into line segment groups respectively corresponding to the wordline groups. The intra-bank switches control, based on the row address, electrical connections between two line segment groups among the line segment groups, where the two line segment groups are adjacent in the column direction and included in one memory bank.