Patents by Inventor Sergey Suchalkin
Sergey Suchalkin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9627422Abstract: There is provided a photodetector, comprising a semiconductor heterostructure having in sequence: a first collection layer having substantially uniform doping of a first doping type; a radiation-absorbing layer having substantially uniform doping of the first doping type and having a band gap less than or equal to that of the first collection layer; and a barrier layer having a band gap greater than that of the radiation-absorbing layer, the top of the valence band of the barrier layer being substantially equal in energy to that of the radiation-absorbing layer where the first doping type is n-type or the bottom of the conduction band of the barrier layer being substantially equal in energy to that of the radiation-absorbing layer where the first doping type is p-type; wherein a first portion of the barrier layer is of the first doping type and a second portion of the barrier layer is of a second doping type, the first portion of the barrier layer being adjacent to the radiation-absorbing layer, forming a hetType: GrantFiled: May 15, 2015Date of Patent: April 18, 2017Assignee: BAH HOLDINGS LLCInventors: Sergey Suchalkin, Michael Tkachuk
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Patent number: 9590140Abstract: An LED optimized for use in low-cost gas or other non-solid substance detection systems, emitting two wavelengths (“colors”) of electromagnetic radiation from the same aperture is disclosed. The LED device emits a light with a wavelength centered on an absorption line of the target detection non-solid substance, and also emits a reference line with a wavelength that is not absorbed by a target non-solid substance, while both wavelengths are transmitted through the atmosphere with low loss. Since the absorption and reference wavelengths are emitted from the same exact aperture, both wavelengths can share the same optical path, reducing the size and cost of the detector while also reducing potential sources of error due to optical path variation.Type: GrantFiled: July 1, 2015Date of Patent: March 7, 2017Inventors: Sergey Suchalkin, Gregory Belenky, Leon Shterengas, David Westerfeld
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Publication number: 20160336361Abstract: There is provided a photodetector, comprising a semiconductor heterostructure having in sequence: a first collection layer having substantially uniform doping of a first doping type; a radiation-absorbing layer having substantially uniform doping of the first doping type and having a band gap less than or equal to that of the first collection layer; and a barrier layer having a band gap greater than that of the radiation-absorbing layer, the top of the valence band of the barrier layer being substantially equal in energy to that of the radiation-absorbing layer where the first doping type is n-type or the bottom of the conduction band of the barrier layer being substantially equal in energy to that of the radiation-absorbing layer where the first doping type is p-type; wherein a first portion of the barrier layer is of the first doping type and a second portion of the barrier layer is of a second doping type, the first portion of the barrier layer being adjacent to the radiation-absorbing layer, forming a hetType: ApplicationFiled: May 15, 2015Publication date: November 17, 2016Inventors: Sergey Suchalkin, Michael Tkachuk
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Publication number: 20160238528Abstract: Optopair for use in sensors and analyzers of gases such as methane, and a fabrication method therefor is disclosed. It comprises: a) an LED, either cascaded or not, having at least one radiation emitting area, whose spectral maximum is de-tuned from the maximum absorption spectrum line of the gas absorption spectral band; and b) a Photodetector, whose responsivity spectral maximum can be either de-tuned from, or alternatively completely correspond to the maximum absorption spectrum line of the absorption spectral band of the gas. Modeling the LED emission and Photodetector responsivity spectra and minimizing the temperature sensitivity of the optopair based on the technical requirements of the optopair signal registration circuitry, once the spectral characteristics of the LED and Photodetector materials and the temperature dependencies of said spectral characteristics are determined, provides the LED de-tuned emission and Photodetector responsivity target peaks respectively.Type: ApplicationFiled: February 16, 2015Publication date: August 18, 2016Applicant: BAH HOLDINGS LLCInventors: Michael Tkachuk, SERGEY SUCHALKIN
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Publication number: 20160005921Abstract: An LED optimized for use in low-cost gas or other non-solid substance detection systems, emitting two wavelengths (“colors”) of electromagnetic radiation from the same aperture is disclosed. The LED device emits a light with a wavelength centered on an absorption line of the target detection non-solid substance, and also emits a reference line with a wavelength that is not absorbed by a target non-solid substance, while both wavelengths are transmitted through the atmosphere with low loss. Since the absorption and reference wavelengths are emitted from the same exact aperture, both wavelengths can share the same optical path, reducing the size and cost of the detector while also reducing potential sources of error due to optical path variation.Type: ApplicationFiled: July 1, 2015Publication date: January 7, 2016Applicant: POWER PHOTONICS CORPORATIONInventors: Sergey Suchalkin, Gregory Belenky, Leon Shterengas, David Westerfeld
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Patent number: 8957376Abstract: Optopair for use in sensors and analyzers of gases such as methane, and a fabrication method therefor is disclosed. It comprises: a) an LED, either cascaded or not, having at least one radiation emitting area, whose spectral maximum is de-tuned from the maximum absorption spectrum line of the gas absorption spectral band; and b) a Photodetector, whose responsivity spectral maximum can be either de-tuned from, or alternatively completely correspond to the maximum absorption spectrum line of the absorption spectral band of the gas. Modeling the LED emission and Photodetector responsivity spectra and minimizing the temperature sensitivity of the optopair based on the technical requirements of the optopair signal registration circuitry, once the spectral characteristics of the LED and Photodetector materials and the temperature dependencies of said spectral characteristics are determined, provides the LED de-tuned emission and Photodetector responsivity target peaks respectively.Type: GrantFiled: May 2, 2014Date of Patent: February 17, 2015Assignee: Bah Holdings, LLCInventors: Michael Tkachuk, Sergey Suchalkin
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Publication number: 20150041655Abstract: Optopair for use in sensors and analyzers of gases such as methane, and a fabrication method therefor is disclosed. It comprises: a) an LED, either cascaded or not, having at least one radiation emitting area, whose spectral maximum is de-tuned from the maximum absorption spectrum line of the gas absorption spectral band; and b) a Photodetector, whose responsivity spectral maximum can be either de-tuned from, or alternatively completely correspond to the maximum absorption spectrum line of the absorption spectral band of the gas. Modeling the LED emission and Photodetector responsivity spectra and minimizing the temperature sensitivity of the optopair based on the technical requirements of the optopair signal registration circuitry, once the spectral characteristics of the LED and Photodetector materials and the temperature dependencies of said spectral characteristics are determined, provides the LED de-tuned emission and Photodetector responsivity target peaks respectively.Type: ApplicationFiled: May 2, 2014Publication date: February 12, 2015Applicant: BAH HOLDINGS LLCInventors: MICHAEL TKACHUK, Sergey Suchalkin
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Patent number: 8571082Abstract: The present invention provides a QCL device with an electrically controlled refractive index through the Stark effect. By changing the electric field in the active area, the energy spacing between the lasing energy levels may be changed and, hence, the effective refractive index in the spectral region near the laser wavelength may be controlled.Type: GrantFiled: January 24, 2011Date of Patent: October 29, 2013Assignees: Maxion Technologies, Inc., The Research Foundation of State University of New York, Board of Regents, The University of Texas SystemInventors: Gregory Belenky, John D. Bruno, Mikhail V. Kisin, Serge Luryi, Leon Shterengas, Sergey Suchalkin, Richard L. Tober, Mikhail Belkin
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Publication number: 20120120972Abstract: The present invention provides a QCL device with an electrically controlled refractive index through the Stark effect. By changing the electric field in the active area, the energy spacing between the lasing energy levels may be changed and, hence, the effective refractive index in the spectral region near the laser wavelength may be controlled.Type: ApplicationFiled: January 24, 2011Publication date: May 17, 2012Inventors: Gregory Belenky, John D. Bruno, Mikhail V. Kisin, Serge Luryi, Leon Shterengas, Sergey Suchalkin, Richard L. Tober, Mikhail Belkin
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Patent number: 7876795Abstract: A semiconductor light source comprises a substrate, lower and upper claddings, a waveguide region with imbedded active area, and electrical contacts to provide voltage necessary for the wavelength tuning. The active region includes single or several heterojunction periods sandwiched between charge accumulation layers. Each of the active region periods comprises higher and lower affinity semiconductor layers with type-II band alignment. The charge carrier accumulation in the charge accumulation layers results in electric field build-up and leads to the formation of generally triangular electron and hole potential wells in the higher and lower affinity layers. Nonequillibrium carriers can be created in the active region by means of electrical injection or optical pumping. The ground state energy in the triangular wells and the radiation wavelength can be tuned by changing the voltage drop across the active region.Type: GrantFiled: August 18, 2005Date of Patent: January 25, 2011Assignees: Maxion Technologies, Inc., The Research Foundation of State University of New YorkInventors: Gregory Belenky, John D. Bruno, Mikhail V. Kisin, Serge Luryi, Leon Shterengas, Sergey Suchalkin, Richard L. Tober
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Publication number: 20060056466Abstract: A semiconductor light source is disclosed comprising a substrate, lower and upper claddings, a waveguide region with imbedded active area, and electrical contacts to provide voltage necessary for the wavelength tuning. The active region includes single or several heterojunction periods sandwiched between charge accumulation layers. Each of the active region periods comprises higher and lower affinity semiconductor layers with type-II band alignment. The charge carrier accumulation in the charge accumulation layers results in electric field build-up and leads to the formation of generally triangular electron and hole potential wells in the higher and lower affinity layers. Nonequillibrium carriers can be created in the active region by means of electrical injection or optical pumping. Radiative recombination occurs between the electrons and holes, accumulated in the ground states of the triangular potential wells formed in the high- and low-affinity layers of each active region periods.Type: ApplicationFiled: August 18, 2005Publication date: March 16, 2006Inventors: Gregory Belenky, John Bruno, Mikhail Kisin, Serge Luryi, Leon Shterengas, Sergey Suchalkin, Richard Tober