Patents by Inventor Sergiy Krylyuk

Sergiy Krylyuk has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PHASE TRANSITION BASED RESISTIVE RANDOM-ACCESS MEMORY
    Publication number: 20200388754
    Abstract: A method of switching a phase-change device (Device), including changing phase of the Device from a semiconducting 2H phase to a new 2Hd phase with a higher conductivity, the Device having an active material with a thickness including a phase transition material to thereby transition the Device from a high resistive state (HRS) to a low resistive state (LRS) by application of a set voltage and further to return the Device from the LRS back to the HRS by application of a reset voltage.
    Type: Application
    Filed: August 25, 2020
    Publication date: December 10, 2020
    Applicants: Purdue Research Foundation, Government of the U.S. as Represented by Secretary of Commerce
    Inventors: Joerg Appenzeller, Feng Zhang, Yuqi Zhu, Albert V. Davydov, Sergiy Krylyuk, Huairuo Zhang, Leonid A. Bendersky
  • Phase transition based resistive random-access memory
    Patent number: 10756263
    Abstract: A method of switching a phase-change device (Device), including changing phase of the Device from a semiconducting 2H phase to a new 2Hd phase with a higher conductivity, the Device having an active material with a thickness including a phase transition material to thereby transition the Device from a high resistive state (HRS) to a low resistive state (LRS) by application of a set voltage and further to return the Device from the LRS back to the HRS by application of a reset voltage.
    Type: Grant
    Filed: August 23, 2018
    Date of Patent: August 25, 2020
    Assignee: Purdue Research Foundation
    Inventors: Joerg Appenzeller, Feng Zhang, Yuqi Zhu, Albert V. Davydov, Sergiy Krylyuk, Huairuo Zhang, Leonid A. Bendersky
  • PHASE TRANSITION BASED RESISTIVE RANDOM-ACCESS MEMORY
    Publication number: 20190363250
    Abstract: A method of switching a phase-change device (Device), including changing phase of the Device from a semiconducting 2H phase to a new 2Hd phase with a higher conductivity, the Device having an active material with a thickness including a phase transition material to thereby transition the Device from a high resistive state (HRS) to a low resistive state (LRS) by application of a set voltage and further to return the Device from the LRS back to the HRS by application of a reset voltage.
    Type: Application
    Filed: August 23, 2018
    Publication date: November 28, 2019
    Applicants: Purdue Research Foundation, National Institute of Standards and Technology
    Inventors: Joerg Appenzeller, Feng Zhang, Yuqi Zhu, Albert V. Davydov, Sergiy Krylyuk, Huairuo Zhang, Leonid A. Bendersky
  • Methods of fabricating micro- and nanostructure arrays and structures formed therefrom
    Patent number: 9627199
    Abstract: Methods of fabricating micro- and nanostructures comprise top-down etching of lithographically patterned GaN layer to form an array of micro- or nanopillar structures, followed by selective growth of GaN shells over the pillar structures via selective epitaxy. Also provided are methods of forming micro- and nanodisk structures and microstructures formed from thereby.
    Type: Grant
    Filed: December 12, 2014
    Date of Patent: April 18, 2017
    Assignees: University of Maryland, College Park, Northrop Grumman Systems Corporation, The United States of America, as represented by the Secretary of Commerce, National Institute of Standards and Technology
    Inventors: Abhishek Motayed, Sergiy Krylyuk, Albert V. Davydov, Matthew King, Jong-Yoon Ha
  • Methods of Fabricating Micro- and Nanostructure Arrays and Structures Formed Therefrom
    Publication number: 20150170901
    Abstract: Methods of fabricating micro- and nanostructures comprise top-down etching of lithographically patterned GaN layer to form an array of micro- or nanopillar structures, followed by selective growth of GaN shells over the pillar structures via selective epitaxy. Also provided are methods of forming micro- and nanodisk structures and microstructures formed from thereby.
    Type: Application
    Filed: December 12, 2014
    Publication date: June 18, 2015
    Applicants: University of Maryland, College Park, Northrop Grumman Systems Corporation, United States of America, as Represented by the Secretary of Commerce
    Inventors: Abhishek Motayed, Sergiy Krylyuk, Albert V. Davydov, Matthew King, Jong-Yoon Ha