Abstract: A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip The first plurality of conductive vias includes first ends and second ends. A first conductor pad is formed in ohmic contact with the first ends of the first plurality of conductive vias.

Abstract: A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip. The first plurality of conductive vias includes first ends and second ends. A first conductor pad is formed in ohmic contact with the first ends of the first plurality of conductive vias.

Abstract: A method of manufacturing is provided that includes applying a thermal interface tape to a side of a semiconductor wafer that includes at least one semiconductor chip. The thermal interface material tape is positioned on the at least one semiconductor chip. The at least one semiconductor chip is singulated from the semiconductor wafer with at least a portion of the thermal interface tape still attached to the semiconductor chip.

Abstract: A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip. The first plurality of conductive vias includes first ends and second ends. A first conductor pad is formed in ohmic contact with the first ends of the first plurality of conductive vias.

Abstract: A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip. The first plurality of conductive vias includes first ends and second ends. A first conductor pad is formed in ohmic contact with the first ends of the first plurality of conductive vias.

Abstract: A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip. The first plurality of conductive vias includes first ends and second ends. A first conductor pad is formed in ohmic contact with the first ends of the first plurality of conductive vias.

Abstract: A method of manufacturing is provided that includes applying a thermal interface tape to a side of a semiconductor wafer that includes at least one semiconductor chip. The thermal interface material tape is positioned on the at least one semiconductor chip. The at least one semiconductor chip is singulated from the semiconductor wafer with at least a portion of the thermal interface tape still attached to the semiconductor chip.

Abstract: A method includes determining a transmission of a transmissive window and a transmission of a transmissive fluid. In addition, an infrared emission of the transmissive window is determined along with an infrared emission of the transmissive fluid for at least one temperature. In a system that has an infrared sensor and an optical pathway to the infrared sensor, the transmissive window and the transmissive fluid are placed in the optical pathway. A semiconductor chip is placed in the optical pathway proximate the transmissive fluid. Radiation from the optical pathway is measured with the infrared sensor. An emissivity of the semiconductor chip is determined using the measured radiation and the determined transmissions and emissions of the transmissive window and the transmissive fluid.

Abstract: An infrared sensor system and a method of calibrating the system are disclosed. In one aspect, a method includes determining a transmission of a transmissive window and a transmission of a transmissive fluid. In addition, an infrared emission of the transmissive window is determined along with an infrared emission of the transmissive fluid for at least one temperature. In a system that has an infrared sensor and an optical pathway to the infrared sensor, the transmissive window and the transmissive fluid are placed in the optical pathway. A semiconductor chip is placed in the optical pathway proximate the transmissive fluid. Radiation from the optical pathway is measured with the infrared sensor. An emissivity of the semiconductor chip is determined using the measured radiation and the determined transmissions and emissions of the transmissive window and the transmissive fluid.