Abstract: Some embodiments include methods of assembling integrated circuit packages in which at least two different conductive layers are formed over a bond pad region of a semiconductor die, and in which a conductive projection associated with an interposer is bonded through a gold ball to an outermost of the at least two conductive layers. The conductive layers may comprise one or more of silver, gold, copper, chromium, nickel, palladium, platinum, tantalum, titanium, vanadium and tungsten. In some embodiments, the bond pad region may comprise aluminum, an inner of the conductive layers may comprise nickel, an outer of the conductive layers may comprise gold, the conductive projection associated with the interposer may comprise gold; and the thermosonic bonding may comprise gold-to-gold bonding of the interposer projection to a gold ball, and gold-to-gold bonding of the outer conductive layer to the gold ball. Some embodiments include integrated circuit packages.

Abstract: Microelectronic devices having intermediate contacts, and associated methods of packaging microelectronic devices with intermediate contacts, are disclosed herein. A packaged microelectronic device configured in accordance with one embodiment of the invention includes a microelectronic die attached to an interconnecting substrate. The microelectronic die includes an integrated circuit electrically coupled to a plurality of terminals. Each of the terminals is electrically coupled to a corresponding first contact on the die with an individual wire-bond. Each of the first contacts on the die is electrically coupled to a corresponding second contact on the interconnecting substrate by a conductive coupler such as a solder ball.

Abstract: Some embodiments include methods of assembling integrated circuit packages in which at least two different conductive layers are formed over a bond pad region of a semiconductor die, and in which a conductive projection associated with an interposer is bonded through a gold ball to an outermost of the at least two conductive layers. The conductive layers may comprise one or more of silver, gold, copper, chromium, nickel, palladium, platinum, tantalum, titanium, vanadium and tungsten. In some embodiments, the bond pad region may comprise aluminum, an inner of the conductive layers may comprise nickel, an outer of the conductive layers may comprise gold, the conductive projection associated with the interposer may comprise gold; and the thermosonic bonding may comprise gold-to-gold bonding of the interposer projection to a gold ball, and gold-to-gold bonding of the outer conductive layer to the gold ball. Some embodiments include integrated circuit packages.

Abstract: Some embodiments include methods of assembling integrated circuit packages in which at least two different conductive layers are formed over a bond pad region of a semiconductor die, and in which a conductive projection associated with an interposer is bonded through a gold ball to an outermost of the at least two conductive layers. The conductive layers may comprise one or more of silver, gold, copper, chromium, nickel, palladium, platinum, tantalum, titanium, vanadium and tungsten. In some embodiments, the bond pad region may comprise aluminum, an inner of the conductive layers may comprise nickel, an outer of the conductive layers may comprise gold, the conductive projection associated with the interposer may comprise gold; and the thermosonic bonding may comprise gold-to-gold bonding of the interposer projection to a gold ball, and gold-to-gold bonding of the outer conductive layer to the gold ball. Some embodiments include integrated circuit packages.

Abstract: Microelectronic devices having intermediate contacts, and associated methods of packaging microelectronic devices with intermediate contacts, are disclosed herein. A packaged microelectronic device configured in accordance with one embodiment of the invention includes a microelectronic die attached to an interconnecting substrate. The microelectronic die includes an integrated circuit electrically coupled to a plurality of terminals. Each of the terminals is electrically coupled to a corresponding first contact on the die with an individual wire-bond. Each of the first contacts on the die is electrically coupled to a corresponding second contact on the interconnecting substrate by a conductive coupler such as a solder ball.

Abstract: Some embodiments include methods of assembling integrated circuit packages in which at least two different conductive layers are formed over a bond pad region of a semiconductor die, and in which a conductive projection associated with an interposer is bonded through a gold ball to an outermost of the at least two conductive layers. The conductive layers may comprise one or more of silver, gold, copper, chromium, nickel, palladium, platinum, tantalum, titanium, vanadium and tungsten. In some embodiments, the bond pad region may comprise aluminum, an inner of the conductive layers may comprise nickel, an outer of the conductive layers may comprise gold, the conductive projection associated with the interposer may comprise gold; and the thermosonic bonding may comprise gold-to-gold bonding of the interposer projection to a gold ball, and gold-to-gold bonding of the outer conductive layer to the gold ball. Some embodiments include integrated circuit packages.

Abstract: Some embodiments include methods of assembling integrated circuit packages in which at least two different conductive layers are formed over a bond pad region of a semiconductor die, and in which a conductive projection associated with an interposer is bonded through a gold ball to an outermost of the at least two conductive layers. The conductive layers may comprise one or more of silver, gold, copper, chromium, nickel, palladium, platinum, tantalum, titanium, vanadium and tungsten. In some embodiments, the bond pad region may comprise aluminum, an inner of the conductive layers may comprise nickel, an outer of the conductive layers may comprise gold, the conductive projection associated with the interposer may comprise gold; and the thermosonic bonding may comprise gold-to-gold bonding of the interposer projection to a gold ball, and gold-to-gold bonding of the outer conductive layer to the gold ball. Some embodiments include integrated circuit packages.

Abstract: Microelectronic devices having intermediate contacts, and associated methods of packaging microelectronic devices with intermediate contacts, are disclosed herein. A packaged microelectronic device configured in accordance with one embodiment of the invention includes a microelectronic die attached to an interconnecting substrate. The microelectronic die includes an integrated circuit electrically coupled to a plurality of terminals. Each of the terminals is electrically coupled to a corresponding first contact on the die with an individual wire-bond. Each of the first contacts on the die is electrically coupled to a corresponding second contact on the interconnecting substrate by a conductive coupler such as a solder ball.

Abstract: Microelectronic devices having intermediate contacts, and associated methods of packaging microelectronic devices with intermediate contacts, are disclosed herein. A packaged microelectronic device configured in accordance with one embodiment of the invention includes a microelectronic die attached to an interconnecting substrate. The microelectronic die includes an integrated circuit electrically coupled to a plurality of terminals. Each of the terminals is electrically coupled to a corresponding first contact on the die with an individual wire-bond. Each of the first contacts on the die is electrically coupled to a corresponding second contact on the interconnecting substrate by a conductive coupler such as a solder ball.

Abstract: Some embodiments include methods of assembling integrated circuit packages in which at least two different conductive layers are formed over a bond pad region of a semiconductor die, and in which a conductive projection associated with an interposer is bonded through a gold ball to an outermost of the at least two conductive layers. The conductive layers may comprise one or more of silver, gold, copper, chromium, nickel, palladium, platinum, tantalum, titanium, vanadium and tungsten. In some embodiments, the bond pad region may comprise aluminum, an inner of the conductive layers may comprise nickel, an outer of the conductive layers may comprise gold, the conductive projection associated with the interposer may comprise gold; and the thermosonic bonding may comprise gold-to-gold bonding of the interposer projection to a gold ball, and gold-to-gold bonding of the outer conductive layer to the gold ball. Some embodiments include integrated circuit packages.

Abstract: Some embodiments include methods of assembling integrated circuit packages in which at least two different conductive layers are formed over a bond pad region of a semiconductor die, and in which a conductive projection associated with an interposer is bonded through a gold ball to an outermost of the at least two conductive layers. The conductive layers may comprise one or more of silver, gold, copper, chromium, nickel, palladium, platinum, tantalum, titanium, vanadium and tungsten. In some embodiments, the bond pad region may comprise aluminum, an inner of the conductive layers may comprise nickel, an outer of the conductive layers may comprise gold, the conductive projection associated with the interposer may comprise gold; and the thermosonic bonding may comprise gold-to-gold bonding of the interposer projection to a gold ball, and gold-to-gold bonding of the outer conductive layer to the gold ball. Some embodiments include integrated circuit packages.

Abstract: A multidie semiconductor device assembly or package includes an interposer comprising a substrate with at least one receptacle therethrough. A plurality of semiconductor device components (e.g., semiconductor devices) may be assembled with the interposer. For example, at least one contact pad of a semiconductor device component adjacent to one surface of the interposer may be electrically connected to a corresponding contact pad of another semiconductor device component positioned adjacent to an opposite surface of the interposer. As another example, multiple semiconductor device components may be at least partially superimposed relative to one another and at least partially disposed within a receptacle of the interposer.

Abstract: A method for assembling one or more semiconductor devices with an interposer includes positioning the one or more semiconductor devices within a receptacle that extends through the interposer, on a retention element that extends over at least a portion of the receptacle. Material may be introduced between at least a portion of an outer periphery of the one or more semiconductor devices and an inner periphery of the interposer to facilitate securing of the one or more semiconductor devices in place relative to the interposer. The retention element may be removed from the semiconductor devices. Once the one or more semiconductor devices are in place, they may be electrically connected to the interposer.

Abstract: Some embodiments include methods of assembling integrated circuit packages in which at least two different conductive layers are formed over a bond pad region of a semiconductor die, and in which a conductive projection associated with an interposer is bonded through a gold ball to an outermost of the at least two conductive layers. The conductive layers may comprise one or more of silver, gold, copper, chromium, nickel, palladium, platinum, tantalum, titanium, vanadium and tungsten. In some embodiments, the bond pad region may comprise aluminum, an inner of the conductive layers may comprise nickel, an outer of the conductive layers may comprise gold, the conductive projection associated with the interposer may comprise gold; and the thermosonic bonding may comprise gold-to-gold bonding of the interposer projection to a gold ball, and gold-to-gold bonding of the outer conductive layer to the gold ball. Some embodiments include integrated circuit packages.

Abstract: A circuit package is formed using a leadframe. The leadframe is formed or etched to align a plurality of bond pad structures above a reference plane while supporting leadframe fingers are positioned below the reference plane. Jumper wires are wirebonded between terminals on the die and the bond pads to form a package subassembly. The subassembly is encapsulated and then background to remove the leadframe fingers and surrounding frame. The bond pads which remain embedded in the encapsulation material are exposed on the lower surface of the package for connection to further conductors.

Abstract: A quad flat no-lead (QFN) grid array semiconductor package and method for making the same are provided. The package includes a semiconductor die and a lead frame having a plurality of conductive elements patterned in a grid-type array. A plurality of bond pads on the semiconductor die is coupled to the plurality of conductive elements, such as by wire bonding. The semiconductor die and at least a portion of the lead frame are encapsulated in an insulative material, leaving the conductive elements exposed along a bottom major surface of the package for subsequent electrical connection with higher-level packaging. Individual conductive lead elements, as well as the grid array pattern, are formed by wire bonding multiple bond pads to a single lead at different locations and subsequently severing the leads between the bonding locations to form multiple conductive elements from each individual lead.

Abstract: A semiconductor device package interposer including a receptacle extending substantially therethrough. Methods for assembling the interposer with one or more semiconductor devices are also disclosed. A film may be secured to a bottom surface of the interposer so as to at least partially cover a bottom end of the receptacle. One or more semiconductor devices are positioned within the receptacle, on the film. Each semiconductor device within the receptacle may then be electrically connected to the interposer. An encapsulant material, which is introduced into the receptacle, extends at least between portions of the outer periphery of each semiconductor device within the receptacle and a peripheral edge of the receptacle. Upon curing, setting, or hardening, the encapsulant material retains each semiconductor device within the receptacle and maintains a lateral position of each semiconductor device with respect to the interposer. Semiconductor device packages and multi-chip modules are also disclosed.

Abstract: A multidie semiconductor device (MDSCD) package includes a generally planar interposer comprising a substrate with a central receptacle, upper surface conductors, and outer connectors on the lower surface of the interposer. Conductive vias connect upper surface conductors with outer connectors. One or more semiconductor devices may be mounted in the receptacle and one or more other semiconductor devices mounted above and/or below the interposer and attached thereto. The package may be configured to have a footprint not significantly larger than the footprint of the largest device and/or a thickness not significantly greater than the combined thickness of included devices. Methods for assembling and encapsulating packages from multidie wafers and multi-interposer sheets or strips are disclosed. Methods for combining a plurality of packages into a single stacked package are disclosed.

Abstract: A circuit package is formed using a leadframe. The leadframe is formed or etched to align a plurality of bond pad structures above a reference plane while supporting leadframe fingers are positioned below the reference plane. Jumper wires are wirebonded between terminals on the die and the bond pads to form a package subassembly. The subassembly is encapsulated and then background to remove the leadframe fingers and surrounding frame. The bond pads which remain embedded in the encapsulation material are exposed on the lower surface of the package for connection to further conductors.

Abstract: An interposer includes a substantially planar substrate with a slot therethrough. The slot includes a laterally recessed area in only a portion of a periphery thereof at a location that exposes at least a portion of an active surface of the semiconductor die located between a bond pad and an outer periphery of the semiconductor die. The laterally recessed area may facilitate access to the bond pad by apparatus for forming, positioning, or securing intermediate conductive elements. The slot may be formed by forming a first, thin elongated slot through the interposer substrate, then widening a portion thereof. Alternatively, a first, small circular hole may be formed through the interposer substrate, and then an elongated slot having a width that exceeds the diameter of the small circular hole may be formed through the substrate at a location which is continuous with the small circular hole.