Patents by Inventor Setiagung Casimirus

Setiagung Casimirus has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SURFACE EMITTING LASER, AND TRANSCEIVER, OPTICAL TRANSCEIVER, AND OPTICAL COMMUNICATION SYSTEM EMPLOYING THE SURFACE EMITTING LASER
    Publication number: 20100086311
    Abstract: A surface emitting laser includes a lower semiconductor multilayer mirror formed of a plurality of pairs of a high-refractive-index area and a low-refractive-index area; an active layer vertically sandwiched by cladding layers; a current confinement layer of AlzGa1-zAs having an oxide area in a peripheral portion of the current confinement layer, where 0.95?z?1; and an upper semiconductor multilayer mirror formed of a plurality of pairs of a high-refractive-index area and a low-refractive-index area. The low-refractive-index area of at least one of the lower semiconductor multilayer mirror and the upper semiconductor multilayer mirror includes an Alz1Ga1-z1As layer with a thickness thinner than that of the current confinement layer, where z?z1.
    Type: Application
    Filed: December 10, 2009
    Publication date: April 8, 2010
    Applicant: The FURUKAWA ELECTRIC CO., LTD.
    Inventors: Hitoshi SHIMIZU, Setiagung Casimirus, Yasukazu Shiina, Takeshi Hama, Norihiro Iwai
  • Surface emitting laser, and transceiver, optical transceiver, and optical communication system employing the surface emitting laser
    Patent number: 7656924
    Abstract: A surface emitting laser includes a lower semiconductor multilayer mirror formed of a plurality of pairs of a high-refractive-index area and a low-refractive-index area; an active layer vertically sandwiched by cladding layers; a current confinement layer of AlzGa1-zAs having an oxide area in a peripheral portion of the current confinement layer, where 0.95?z?1; and an upper semiconductor multilayer mirror formed of a plurality of pairs of a high-refractive-index area and a low-refractive-index area. The low-refractive-index area of at least one of the lower semiconductor multilayer mirror and the upper semiconductor multilayer mirror includes an Alz1Ga1-z1As layer with a thickness thinner than that of the current confinement layer, where z?z1.
    Type: Grant
    Filed: October 5, 2004
    Date of Patent: February 2, 2010
    Assignee: The Furukawa Electric Co., Ltd.
    Inventors: Hitoshi Shimizu, Setiagung Casimirus, Yasukazu Shiina, Takeshi Hama, Norihiro Iwai
  • Surface-emitting laser element and laser module using the same
    Publication number: 20070030874
    Abstract: A cavity is formed by a lower multilayer mirror and an upper multilayer mirror and an active layer is arranged between the lower multilayer mirror and the upper multilayer mirror in a surface-emitting laser element. A relaxation oscillation frequency at a bias point in the cavity is set to exceed an optical communication frequency for modulating a laser light output from the surface-emitting laser element.
    Type: Application
    Filed: September 5, 2006
    Publication date: February 8, 2007
    Applicant: The Furukawa Electric Co, Ltd.
    Inventors: Maiko Ariga, Norihiro Iwai, Setiagung Casimirus, Hitoshi Shimizu, Fumio Koyama, Masakazu Arai, Takeo Kageyama
  • Vertical cavity surface emitting laser device having a higher optical output power
    Publication number: 20060193361
    Abstract: A vertical cavity surface emitting laser (VCSEL) device includes has an epitaxial layer structure formed on a GaAs substrate and including a pair of multilayer reflectors and a tunnel junction structure. The tunnel junction structure is configured by a heavily-doped n-type Tix2Inx1Ga1-x1-x2As1-y1-y2Ny1Sby2 mixed-crystal layer and a heavily-doped p-type Tix4Inx3Ga1-x3-x4As1-y3-y4Ny3Sby4 mixed-crystal layer, where 0?x2?0.3, 0?x1?0.3, 0<y1?0.05, 0<y2?0.3, 0?x4?0.3, 0?x3?0.05, 0<y3?0.05, and 0<y4?0.3.
    Type: Application
    Filed: February 6, 2006
    Publication date: August 31, 2006
    Applicant: THE FURUKAWA ELECTRIC CO., LTD.
    Inventors: Setiagung Casimirus, Takeo Kageyama
  • Surface emitting laser, and transceiver, optical transceiver, and optical communication system employing the surface emitting laser
    Publication number: 20050123014
    Abstract: A surface emitting laser includes a lower semiconductor multilayer mirror formed of a plurality of pairs of a high-refractive-index area and a low-refractive-index area; an active layer vertically sandwiched by cladding layers; a current confinement layer of AlzGa1-zAs having an oxide area in a peripheral portion of the current confinement layer, where 0.95?z?1; and an upper semiconductor multilayer mirror formed of a plurality of pairs of a high-refractive-index area and a low-refractive-index area. The low-refractive-index area of at least one of the lower semiconductor multilayer mirror and the upper semiconductor multilayer mirror includes an Alz1Ga1-z1As layer with a thickness thinner than that of the current confinement layer, where z?z1.
    Type: Application
    Filed: October 5, 2004
    Publication date: June 9, 2005
    Applicant: THE FURUKAWA ELECTRONIC CO., LTD.
    Inventors: Hitoshi Shimizu, Setiagung Casimirus, Yasukazu Shiina, Takeshi Hama, Norihiro Iwai