Abstract: A wide-band RF signal power detecting element includes, on an insulating substrate (21), at least one thin-film resistor (22a) for absorbing the power of a signal to be measured and generating heat, first and second ground electrodes (27, 28) formed by thin-film conductors, a first thin-film connecting portion (24) for electrically connecting the first ground electrode (27) to the thin-film resistor (22a), a second thin-film connecting portion (25) for electrically connecting the second ground electrode (28) to the thin-film resistor (22a) and narrowing the gap between the first and second thin-film connecting portions (24, 25) toward the thin-film resistor (22a), and an input electrode (26) formed between the first and second ground electrodes (27, 28) and electrically connected to the thin-film resistor (22a).

Abstract: A wide-band RF signal power detecting element includes, on an insulating substrate (21), at least one thin-film resistor (22a) for absorbing the power of a signal to be measured and generating heat, first and second ground electrodes (27, 28) formed by thin-film conductors, a first thin-film connecting portion (24) for electrically connecting the first ground electrode (27) to the thin-film resistor (22a), a second thin-film connecting portion (25) for electrically connecting the second ground electrode (28) to the thin-film resistor (22a) and narrowing the gap between the first and second thin-film connecting portions (24, 25) toward the thin-film resistor (22a), and an input electrode (26) formed between the first and second ground electrodes (27, 28) and electrically connected to the thin-film resistor (22a).

Abstract: A wide-band RF signal power detecting element includes, on an insulating substrate (21), at least one thin-film resistor (22a) for absorbing the power of a signal to be measured and generating heat, first and second ground electrodes (27, 28) formed by thin-film conductors, a first thin-film connecting portion (24) for electrically connecting the first ground electrode (27) to the thin-film resistor (22a), a second thin-film connecting portion (25) for electrically connecting the second ground electrode (28) to the thin-film resistor (22a) and narrowing the gap between the first and second thin-film connecting portions (24, 25) toward the thin-film resistor (22a), and an input electrode (26) formed between the first and second ground electrodes (27, 28) and electrically connected to the thin-film resistor (22a).

Abstract: A wide-band RF signal power detecting element includes, on an insulating substrate (21), at least one thin-film resistor (22a) for absorbing the power of a signal to be measured and generating heat, first and second ground electrodes (27, 28) formed by thin-film conductors, a first thin-film connecting portion (24) for electrically connecting the first ground electrode (27) to the thin-film resistor (22a), a second thin-film connecting portion (25) for electrically connecting the second ground electrode (28) to the thin-film resistor (22a) and narrowing the gap between the first and second thin-film connecting portions (24, 25) toward the thin-film resistor (22a), and an input electrode (26) formed between the first and second ground electrodes (27, 28) and electrically connected to the thin-film resistor (22a).

Abstract: A wide-band RF signal power detecting element includes, on an insulating substrate (21), at least one thin-film resistor (22a) for absorbing the power of a signal to be measured and generating heat, first and second ground electrodes (27, 28) formed by thin-film conductors, a first thin-film connecting portion (24) for electrically connecting the first ground electrode (27) to the thin-film resistor (22a), a second thin-film connecting portion (25) for electrically connecting the second ground electrode (28) to the thin-film resistor (22a) and narrowing the gap between the first and second thin-film connecting portions (24, 25) toward the thin-film resistor (22a), and an input electrode (26) formed between the first and second ground electrodes (27, 28) and electrically connected to the thin-film resistor (22a).

Abstract: In order, to manufacture a high-performance infrared-emitting element having high-speed thermal response characteristics and a high infrared emissivity, a bridge (heat-generating) portion having a separation space is formed on a silicon element substrate. The bridge portion is formed to have a thickness of 5 &mgr;m or less by doping boron as an impurity by ion implantation with a concentration distribution peak value of 1.5×1019 atoms/cm3 or more, and performing annealing under predetermined conditions for activating the impurity layer. In the infrared-emitting element manufactured in this manner, even if the bridge portion is made thin to improve the thermal response characteristics, the infrared emissivity does not decrease because of a high impurity concentration, and a large temperature modulation width can be obtained. In doping boron as the impurity by ion implantation, the dose is preferably set to 3.0×1014 ions/cm2 or more.

Abstract: A temperature sensor which can achieve accurate temperature measurement in a magnetic field and accurate temperature measurement over a broader temperature range and, further, provides a temperature sensor which, in the correction of a temperature characteristic on a resistance value of the present temperature sensor, can reduce, to a minimal possible extent, an error between a value found from an approximation equation and a measured value, includes a cylindrical type sensor including a temperature-sensitive device having a micro-crystalline semiconductor thin film formed over an insulating substrate and four electrodes connected to the thin film, a cylindrical container made of a nonmagnetic metal and holding the temperature-sensitive device, together with a helium gas, hermetically sealed therein and four conductors hermetically mounted at the bottom of the container and connected to the corresponding electrodes of the temperature-sensitive device, with the micro-crystalline semiconductor thin film 2 being

Abstract: This invention provides a sensing system for measuring a specific value such as the thickness, thermal conductivity, or the like of a substance to be measured by utilizing a change in thermal resistance with a simple arrangement. A sensor has a temperature difference setting thin film (202) and a temperature difference detection thin film (203) formed on a substrate (201) made of a thermally poor conductor, converts a change in temperature difference of the substrate (201) before and after a substance (200) to be measured is thermally coupled to the substrate into a change in thermal resistance of the substrate (201), and outputs the change in thermal resistance as a temperature difference information signal for calculating a desired specific value of the substance to be measured.

Abstract: The electric resistor of this invention is comprised of a Si-Ge alloy thin film containing amorphous and microcrystal phases which serve as an electric resistance, thereby keeping the resistance value ratio substantially constant and uninfluenced by frequency changes which range from d.c. to 32 GHz. In addition, the power detector of this invention uses a thermocouple which is made by connecting the conductor film with the above-mentioned alloy thin film having great thermoelectric power. The thermocouple is provided with beam lead electrodes at cold junction areas to thereby produce large temperature differences between the hot and cold junctions, so that the thermocouple is provided with a sufficient thermal gradient to detect very low power with high accuracy.

Abstract: The electric resistor of this invention is comprised of a Si-Ge alloy thin film containing amorphous and microcrystal phases which serve as an electric resistance, thereby keeping the resistance value ratio substantially constant and uninfluenced by frequency changes which range from d.c. to 32 GHz. In addition, the power detector of this invention uses a thermocouple which is made by connecting the conductor film with the above-mentioned alloy thin film having great thermoelectric power. The thermocouple is provided with beam lead electrodes at cold junction areas to thereby produce large temperature differences between the hot and cold junctions, so that the thermocouple is provided with a sufficient thermal gradient to detect very low power with high accuracy.

Abstract: The invention relates to a thin film conductor which has a composition containing silicon and germanium as major components and has a structure in which both amorphous and microcrystalline phases are present, and a method of manufacturing the same by a CVD method. The resultant thin film conductor has characteristics, such as a high dark conductivity, a large gauge factor, a small temperature coefficient of the dark conductivity, a large thermoelectric power, and the like, and is used as a material for microelectronic devices having a sensor function.

Abstract: The invention relates to a thin film conductor which has a composition containing silicon and germanium as major components and has a structure in which both amorphous and microcrystalline phases are present, and a method of manufacturing the same by a CVD method. The resultant thin film conductor has characteristics, such as a high dark conductivity, a large gauge factor, a small temperature coefficient of the dark conductivity, a large thermoelectric power, and the like, and is used as a material for microelectronic devices having a sensor function.