Abstract: The present invention relates to an agent for improving aftertaste of alcoholic beverages comprising allulose-containing saccharides, and a method for improving aftertaste of alcoholic beverages using allulose.

Abstract: A display device according to an embodiment includes: a substrate; a transistor that is disposed on the substrate; a light emitting diode that is disposed on the substrate, and connected to the transistor; and a passivation layer that is disposed between the transistor and the light emitting diode, wherein a surface step of the passivation layer is within a range of and including 1 nm to 30 nm.

Abstract: A method of manufacturing a cathode active material for a lithium secondary battery according to embodiments of the present invention includes performing a first heat treatment on a first mixture of a transition metal precursor and a lithium precursor at a first calcination temperature to obtain a preliminary lithium-transition metal composite oxide particle; and performing a second heat treatment on a second mixture obtained by adding the lithium precursor to the preliminary lithium-transition metal composite oxide particle at a second calcination temperature which is lower than the first calcination temperature to form a lithium-transition metal composite oxide particle.

Abstract: A brassiere for radiation therapy is disclosed. The brassiere for radiation therapy according to an embodiment of the present disclosure includes a pair of cups configured to cover breasts of a patient; a coupling member positioned between the pair of cups and configured to couple the pair of cups to each other; back bands configured to be in close contact with a back of the patient; and side compression bands, the side compression bands having one ends coupled to the pair of cups at the coupling member, respectively, and the other ends detachably coupled to the back bands, respectively, wherein positions of the breasts of the patient are changed by adjusting positions on the back bands to which the other ends of side compression bands are coupled.

Abstract: Disclosed are a SiC MOSFET power semiconductor device and a method of manufacturing the same. More particularly, a SiC MOSFET power semiconductor device and a method of manufacturing the same are disclosed, including a trench gate having a hexagonal shape in a plan or layout view, to improve on-resistance (Rsp) characteristics and increase channel density.

Abstract: Disclosed are a semiconductor device (1) including a MOSPET region and an integrated diode region, and a manufacturing method thereof. More particularly, a semiconductor device (1) including a silicon carbide (SiC) MOSPET region and an integrated Schottky bather diode that reduce forward voltage drop (Vf), device area, and switching oscillation resulting from parasitic inductance are disclosed.

Abstract: In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.

Abstract: A system and a method of controlling a solar roof of a vehicle are provided. The system includes a solar cell panel and a controller that controls charging of a main battery and an auxiliary battery using power generated from the solar cell panel. A light amount sensor senses the amount of light collected in the solar cell panel and a temperature sensor measures a surface temperature of the solar cell panel.

Abstract: A solar charging system and method for a vehicle may include a battery mounted in the vehicle, a solar panel mounted on the vehicle to perform solar power generation, and a solar controller that receives electricity generated from the solar panel to operate, and controls charging of the battery using the electricity.

Abstract: A system and a method of controlling a solar roof of a vehicle are provided. The system includes a solar cell panel and a controller that controls charging of a main battery and an auxiliary battery using power generated from the solar cell panel. A light amount sensor senses the amount of light collected in the solar cell panel and a temperature sensor measures a surface temperature of the solar cell panel.

Abstract: A solar charging system and method for a vehicle may include a battery mounted in the vehicle, a solar panel mounted on the vehicle to perform solar power generation, and a solar controller that receives electricity generated from the solar panel to operate, and controls charging of the battery using the electricity.

Abstract: Pants having a hip-up function capable of shaping buttocks are provided. The pants having a hip-up function include an elastic lining for shaping a body, and an elastic wrinkle portion provided in a cleavage portion between buttocks in the lining.

Abstract: An enhanced n+ silicon material for epitaxial substrates and a method for producing it are described. The enhanced material leads to improved gettering characteristics of n/n+ epitaxial wafers based on these substrates. The method for preparing such n+ silicon material includes applying a co-doping of carbon to the usual n dopant in the silicon melt, before growing respective CZ crystals. This improves yield of enhanced n+ silicon material in crystal growing and ultimately leads to device yield stabilization or improvement when such n/n+ epitaxial wafers are applied in device manufacturing.

Abstract: An enhanced n+ silicon material for epitaxial substrates and a method for producing it are described. The enhanced material leads to improved gettering characteristics of n/n+ epitaxial wafers based on these substrates. The method for preparing such n+ silicon material includes applying a co-doping of carbon to the usual n dopant in the silicon melt, before growing respective CZ crystals. This improves yield of enhanced n+ silicon material in crystal growing and ultimately leads to device yield stabilization or improvement when such n/n+ epitaxial wafers are applied in device manufacturing.