Abstract: The present invention discloses an encoding apparatus using a Discrete Cosine Transform (DCT) scanning, which includes a mode selection means for selecting an optimal mode for intra prediction; an intra prediction means for performing intra prediction onto video inputted based on the mode selected in the mode selection means; a DCT and quantization means for performing DCT and quantization onto residual coefficients of a block outputted from the intra prediction means; and an entropy encoding means for performing entropy encoding onto DCT coefficients acquired from the DCT and quantization by using a scanning mode decided based on pixel similarity of the residual coefficients.

Abstract: The present invention relates to a technology for analyzing and detecting/diagnosing a target nucleic acid. When the detection system according to the present invention is used, effective real-time detection or diagnosis efficiency can be obtained while problems such as noise are minimized. In particular, since, by using a house-keeping gene according to a method of use, the expression difference of the target nucleic acid can be corrected, and direct real-time target nucleic acid detection is possible, it can be effectively used for detecting various nucleic acids and diagnosing various diseases thereby.

Abstract: The present invention relates to a novel pyruvate transporter. By using the novel enzyme of the present invention, biomass and metabolite production amounts of a microorganism can be increased. Accordingly, by massively incubating the microorganism having improved growth characteristics, biomass or target protein production efficiency, or biodiesel production efficiency can be improved, and bioenergy production costs can be reduced, which may bring out the effect of industrial development.

Abstract: The present invention relates to a novel pyruvate transporter. By using the novel enzyme of the present invention, biomass and metabolite production amounts of a microorganism can be increased. Accordingly, by massively incubating the microorganism having improved growth characteristics, biomass or target protein production efficiency, or biodiesel production efficiency can be improved, and bioenergy production costs can be reduced, which may bring out the effect of industrial development.

Abstract: The present invention relates to a catechin absorption enhancer in small intestinal epithelial cells, and more particularly, to an enhancer for improving an absorption rate of catechin in small intestinal cells and a composition including the same. The composition including the catechin absorption enhancer in the small intestinal epithelial cells according to the invention can enhance the absorption rate of catechin in the small intestinal epithelial cells, which leads to improved bioavailability. Therefore, the present invention can be expected to improve an antioxidant effect, an anti-aging effect, a lipolytic effect, and a variety of other effects of the catechin.

Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer disposed therebetween, and a surface plasmon layer disposed between the active layer and at least one of the n-type and p-type semiconductor layers, including metallic particles and an insulating material, and including a conductive via for electrical connection between the active layer and the at least one of the n-type and p-type semiconductor layers, wherein the metallic particles are enclosed by the insulating material to be insulated from the at least one of the n-type and p-type semiconductor layers. The semiconductor light emitting device can achieve enhanced emission efficiency by using surface plasmon resonance. Using the semiconductor light emitting device, the diffusion of a metal employed for surface plasmon resonance into the active layer can be minimized.

Abstract: There is provided a nitride semiconductor light emitting device including: an n-type semiconductor region; an active layer formed on the n-type semiconductor region; a p-type semiconductor region formed on the active layer; an n-electrode disposed in contact with the n-type semiconductor region; a p-electrode formed on the p-type semiconductor region; and at least one intermediate layer formed in at least one of the n-type semiconductor region and the p-type semiconductor region, the intermediate layer disposed above the n-electrode, wherein the intermediate layer is formed of a multi-layer structure where at least three layers with different band gaps from one another are deposited, wherein the multi-layer structure includes one of an AlGaN layer/GaN layer/InGaN layer stack and an InGaN layer/GaN layer/AlGaN layer stack.

Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer disposed therebetween, and a surface plasmon layer disposed between the active layer and at least one of the n-type and p-type semiconductor layers, including metallic particles and an insulating material, and including a conductive via for electrical connection between the active layer and the at least one of the n-type and p-type semiconductor layers, wherein the metallic particles are enclosed by the insulating material to be insulated from the at least one of the n-type and p-type semiconductor layers. The semiconductor light emitting device can achieve enhanced emission efficiency by using surface plasmon resonance. Using the semiconductor light emitting device, the diffusion of a metal employed for surface plasmon resonance into the active layer can be minimized.

Abstract: A plasma display panel includes a red phosphor layer, a green phosphor layer, and a blue phosphor layer. The thickness of the phosphor layer is satisfied by the following condition: when D is (S?2L)/S, D?0.64, S being a distance between barrier ribs at half the height of the barrier ribs, and L being a side thickness of the phosphor layer coated on the barrier ribs at half the height thereof.

Abstract: A plasma display panel and a method of manufacturing the plasma display panel are provided. The plasma display panel includes: a plurality of substrates including a first substrate and a second substrate disposed to face the first substrate; a plurality of barrier ribs disposed between the first substrate and the second substrate and defining a plurality of discharge spaces; a plurality of discharge electrodes disposed between the first substrate and the second substrate; phosphor layers formed in the discharge spaces; and an external light shield layer formed inside the substrates.

Abstract: There is provided a nitride semiconductor light emitting device including: an n-type semiconductor region; an active layer formed on the n-type semiconductor region; a p-type semiconductor region formed on the active layer; an n-electrode disposed in contact with the n-type semiconductor region; a p-electrode formed on the p-type semiconductor region; and at least one intermediate layer formed in at least one of the n-type semiconductor region and the p-type semiconductor region, the intermediate layer disposed above the n-electrode, wherein the intermediate layer is formed of a multi-layer structure where at least three layers with different band gaps from one another are deposited, wherein the multi-layer structure includes one of an AlGaN layer/GaN layer/InGaN layer stack and an InGaN layer/GaN layer/AlGaN layer stack.

Abstract: A Plasma Display Panel (PDP) includes first and second substrates facing each other and overlapping each other, and frit that is provided along a periphery of the overlapping portion between the first and second substrates to seal the first and second substrates together. The frit includes a plurality of wide portions each having a predetermined length and a plurality of connection portions interconnecting the adjacent wide portions. Each connection portion has a width less than that any one of the plurality of wide portions.

Abstract: A plasma display panel includes a red phosphor layer, a green phosphor layer, and a blue phosphor layer. The thickness of the phosphor layer is satisfied by the following condition: when D is (S?2L)/S, D?0.64, S being a distance between barrier ribs at half the height of the barrier ribs, and L being a side thickness of the phosphor layer coated on the barrier ribs at half the height thereof.

Abstract: A plasma display panel includes a red phosphor layer, a green phosphor layer, and a blue phosphor layer. The thickness of the phosphor layer is satisfied by the following condition: when D is (S?2L)/S, D?0.64, S being a distance between barrier ribs at half the height of the barrier ribs, and L being a side thickness of the phosphor layer coated on the barrier ribs at half the height thereof.

Abstract: A Plasma Display Panel (PDP) includes: a front substrate; a rear substrate arranged parallel to the front substrate; barrier ribs arranged between the front substrate and the rear substrate and adapted to demarcate light-emitting cells in a lattice pattern; upper electrodes and lower electrodes embedded in the barrier ribs around the light-emitting cells and extending in an arrangement direction of the light-emitting cells arranged in the lattice pattern; and address electrodes embedded in the barrier ribs around the light-emitting cells and arranged between the upper electrodes and the lower electrodes; wherein the PDP is driven by a driving signal in which one frame is divided into a plurality of sub-fields according to brightness weights, each sub-field including an address period and a sustain-discharge period; and during the address period, a scanning signal is supplied to one of the upper electrodes and the lower electrodes, and an address signal is supplied to the address electrodes, to select light-em

Abstract: Provided is a blue phosphor layer that is arranged in discharge cells of a plasma display panel. The blue phosphor layer is formed by stacking two kinds of blue phosphor materials in a dual-layered structure.

Abstract: A Plasma Display Panel (PDP) having a structure capable of preventing a permanent afterimage generated by damage to a protective film during a sustain discharge includes: front and rear substrates arranged to face each other; barrier ribs arranged between the front and rear substrates to partition discharge cells in combination with the front and rear substrates; a plurality of electrodes adapted to generate a discharge in the discharge cells; a plurality of X electrodes each including a transparent X electrode arranged at a rear side of the front substrate in the discharge cell to extend in one direction; a plurality of Y electrodes each including a transparent Y electrode arranged at a rear side of the front substrate in the discharge cell to be spaced apart from the X electrode by a gap and to extend to and be aligned with the transparent X electrode; opaque X and Y shield layers respectively arranged on one end surface of the transparent X and Y electrodes, the one end surfaces neighboring the gap; a firs

Abstract: The present invention relates to a plasma display panel including a first substrate having a plurality of address electrodes and a dielectric layer, a second substrate, which is opposed to the first substrate, having a plurality of display electrodes, a dielectric layer, and a protection layer, barrier ribs formed on the first substrate to partition a plurality of discharge cells between the first substrate and the second substrate, a red, a green, and a blue phosphor layer formed inside of each discharge cell partitioned by the barrier ribs, and a layer for decreasing reflective brightness, which is formed on the upper-end surface of the barrier ribs, and comprises calcium magnesium silicate based blue phosphor.

Abstract: A Plasma Display Panel (PDP) includes: a front substrate; a rear substrate arranged parallel to the front substrate; barrier ribs arranged between the front substrate and the rear substrate and adapted to demarcate light-emitting cells in a lattice pattern; upper electrodes and lower electrodes embedded in the barrier ribs around the light-emitting cells and extending in an arrangement direction of the light-emitting cells arranged in the lattice pattern; and address electrodes embedded in the barrier ribs around the light-emitting cells and arranged between the upper electrodes and the lower electrodes; wherein the PDP is driven by a driving signal in which one frame is divided into a plurality of sub-fields according to brightness weights, each sub-field including an address period and a sustain-discharge period; and during the address period, a scanning signal is supplied to one of the upper electrodes and the lower electrodes, and an address signal is supplied to the address electrodes, to select light-em

Abstract: A plasma display panel (PDP) having improved luminous efficiency may be constructed with an upper substrate, a lower substrate disposed parallel to the upper substrate, and a plurality of upper barrier ribs formed of a dielectric disposed between the upper substrate and the lower substrate. The upper barrier ribs, together with the upper substrate and the lower substrate, define discharge cells. A plurality of upper discharge electrodes are disposed to surround the discharge cell are embedded in the upper barrier ribs. A plurality of lower discharge electrodes that are spaced-apart from the upper discharge electrodes are embedded in the upper barrier ribs to surround the discharge cell. A plurality of lower barrier ribs are disposed between the upper barrier ribs and the lower substrate.