Patents by Inventor Seung-bum Hong

Seung-bum Hong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD OF IMPROVING SENSITIVITY OF ELECTRIC FIELD SENSOR, STORAGE APPARATUS INCLUDING ELECTRIC FIELD SENSOR, AND METHOD OF REPRODUCING INFORMATION OF THE STORAGE APPARATUS
    Publication number: 20090034405
    Abstract: A storage apparatus includes a ferroelectric recording medium, an electric field sensor including a source region, a drain region and a resistance region electrically connecting the source region to the drain region and having a resistance, which varies according to an intensity of an electric field due to a polarization voltage of an electric domain of the recording medium, a voltage applying unit applying a drain voltage between the source region and the drain region, and a reproducing signal detection unit including at least one negative resistor installed in an electric circuit connecting the drain region to the voltage applying unit, and detecting a change in a voltage between the drain region and the at least one negative resistor.
    Type: Application
    Filed: December 28, 2007
    Publication date: February 5, 2009
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dae-young JEON, Dong-ki MIN, Hyoung-soo KO, Seung-bum HONG
  • ELECTRIC FIELD READ/WRITE HEAD, METHOD OF MANUFACTURING THE SAME, AND INFORMATION STORAGE DEVICE COMPRISING ELECTRIC FIELD READ/WRITE HEAD
    Publication number: 20090034120
    Abstract: An electric field read/write head, a method of manufacturing the electric field read/write head, and an information storage device including the electric field read/write head are provided. The electric field read/write head includes: a substrate having a first surface facing a recording medium and a second surface that is perpendicular to the first surface; and a protrusion formed on the second surface and having at least a portion facing the recording medium, wherein a resistance sensor comprising a source, a drain, and a channel is included in the protrusion. An insulating layer and electric field shield layers are further sequentially formed on opposite sides of the protrusion, respectively, and at least one of the electric field shield layers is a write electrode.
    Type: Application
    Filed: February 28, 2008
    Publication date: February 5, 2009
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Hyoung-soo KO, Ju-hwan Jung, Seung-bum Hong, Chul-min Park, Dae-young Jeon
  • ELECTRIC FIELD READ/WRITE HEAD, METHOD OF MANUFACTURING THE SAME, AND INFORMATION STORAGE DEVICE COMPRISING THE ELECTRIC FIELD READ/WRITE HEAD
    Publication number: 20090021862
    Abstract: An electric field read/write head, a method of manufacturing the same, and an information storage device including the electric field read/write head are provided. The electric field read/write head includes: a resistance region formed in a substrate which comprises an end surface facing a recording medium; a source and a drain formed in the substrate and disposed on both sides of the resistance region, respectively; and an insulating layer and a write electrode formed sequentially on the resistance region, wherein the length (l) to width (w) ratio (l/w) of the resistance region satisfies (l/w)?0.2.
    Type: Application
    Filed: December 17, 2007
    Publication date: January 22, 2009
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Hyoung-soo Ko, Chul-min Park, Ju-hwan Jung, Seung-bum Hong, Dae-young Jeon
  • Method of manufacturing high-density data storage medium
    Patent number: 7479212
    Abstract: A high-density data storage medium, a method of manufacturing the data storage medium, a high-density data storage apparatus, and methods of writing data on, and reading and erasing data from the data storage medium by using the data storage apparatus are provided. The data storage medium includes a lower electrode, an insulation layer deposited on the lower electrode, a photoelectron emission layer deposited on the insulation layer and having a plurality of protrusions from which photoelectrons are emitted due to collisions between the protrusions and photons, and a dielectric layer deposited on the photoelectron emission layer and storing the photoelectrons emitted from the photoelectron emission layer.
    Type: Grant
    Filed: December 18, 2006
    Date of Patent: January 20, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seung-bum Hong, In-kyeong Yoo, Ju-hwan Jung
  • Semiconductor probe and method of writing and reading information using the same
    Patent number: 7464584
    Abstract: A semiconductor probe and a method of writing and reading information using the same. The semiconductor probe includes a cantilever and a tip formed on an end portion of the cantilever to write or read information on or from a ferroelectric medium on a surface of which an electrode is formed. The tip includes a resistive region lightly doped with semiconductor impurities and a conductive region heavily doped with the semiconductor impurities. The cantilever includes an electrostatic force generation electrode formed on a bottom surface facing the medium. A contact force between the tip and the medium is adjusted by selectively applying a voltage between the electrode formed on the ferroelectric medium and the electrostatic force generation electrode.
    Type: Grant
    Filed: September 26, 2006
    Date of Patent: December 16, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hong-sik Park, Ju-hwan Jung, Hyoung-soo Ko, Seung-bum Hong
  • X-Y stage driver having locking device and data storage system having the X-Y stage driver
    Patent number: 7459809
    Abstract: An X-Y stage driver having a locking device and a data storage system having the X-Y stage driver. The X-Y stage driver includes an X-Y stage; a supporting unit that supports the X-Y stage and has elastic beams that support corners of the X-Y stage; a driving unit that drives the X-Y stage in a first direction and a second direction which is perpendicular to the first direction; a stiffener that prevents the X-Y stage from rotating; and a locking device that fixes the stiffener by an electrostatic force.
    Type: Grant
    Filed: October 18, 2006
    Date of Patent: December 2, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hong-sik Park, Jong-youp Shim, Seung-bum Hong, Dong-ki Min
  • ELECTRIC FIELD READ/WRITE DEVICE AND METHOD OF DRIVING THE SAME
    Publication number: 20080279062
    Abstract: Provided are an electric field read/write device and a method of driving an electric field read/write device. The method including an electric field read/write head comprising a resistance region disposed between a source region and a drain region and a writing electrode disposed on the resistance region, wherein the method includes: applying a controlling voltage to the writing electrode, wherein the controlling voltage is smaller than a threshold voltage which causes polarization of a recording medium, and reproducing data recorded in the recording medium according to change of an amount of a current flowing through the resistance region according to a polarization direction of electric domains of the recording medium.
    Type: Application
    Filed: October 31, 2007
    Publication date: November 13, 2008
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Dae-young Jeon, Hyoung-soo Ko, Seung-bum Hong, Chul-min Park
  • Ferroelectric information storage device and method of writing/reading information
    Patent number: 7440302
    Abstract: An information storage device includes a ferroelectric layer having a first surface and a second surface opposite the first surface. A common electrode layer is formed on the first surface of the ferroelectric layer. At least two conductive track layers separated from each other are positioned on the second surface of the ferroelectric layer. A conductive roller that has two opposite ends supported by the conductive track layers is provided. The conductive roller is movable along a conductive track. A ferromagnetic layer creates a magnetic field on the conductive roller.
    Type: Grant
    Filed: August 9, 2006
    Date of Patent: October 21, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seung-bum Hong, Jin-gyoo Yoo, Ju-hwan Jung, Simon Buehlmann
  • FERROELECTRIC HARD DISK SYSTEM
    Publication number: 20080247085
    Abstract: A ferroelectric hard disk device is provided and includes: a ferroelectric media having a bottom electrode and a ferroelectric layer disposed on the bottom electrode; and a head formed above the ferroelectric media, the head being operative to write and reproduce information on the ferroelectric layer.
    Type: Application
    Filed: December 26, 2007
    Publication date: October 9, 2008
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seung-bum Hong, Sung-hoon Choa, Ju-hwan Jung, Hyoung-soo Ko, Yong Kwan Kim
  • FERROELECTRIC RECORDING MEDIUM AND WRITING METHOD FOR THE SAME
    Publication number: 20080225678
    Abstract: A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.
    Type: Application
    Filed: May 29, 2008
    Publication date: September 18, 2008
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyoung-soo KO, Eun-sik Kim, Sung-dong Kim, Ju-hwan Jung, Hong-sik Park, Chul-min Park, Seung-bum Hong
  • METHOD OF MANUFACTURING ENHANCEMENT TYPE SEMICONDUCTOR PROBE AND INFORMATION STORAGE DEVICE HAVING THE SEMICONDUCTOR PROBE USING THE SAME
    Publication number: 20080220556
    Abstract: A method of manufacturing an enhancement type semiconductor probe and an information storage device having the enhancement type semiconductor probe are provided. The method involves using an anisotropic wet etching and a side-wall in which influence of process parameters upon the performance of a device is reduced to improve reliability of the device in mass-production, and factors of degrading measuring sensitivity is removed to improve the performance of the device.
    Type: Application
    Filed: March 7, 2008
    Publication date: September 11, 2008
    Applicants: Samsung Electronics Co., Ltd., SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION
    Inventors: Hyoung Soo Ko, Byung Gook Park, Seung Bum Hong, Chul Min Park, Woo Young Choi, Jong Pil Kim, Jae Young Song, Sang Wan Kim
  • FERROELECTRIC MEDIA MANUFACTURING METHOD THEREOF AND INFORMATION STORAGE DEVICE USING THE SAME
    Publication number: 20080220247
    Abstract: A ferroelectric medium, a manufacturing method thereof and an information storage device are disclosed. The manufacturing method includes the steps of: forming an electrode layer on a substrate; forming an insulation layer on the electrode; and forming on the insulation layer a ferroelectric layer. Dielectric breakdown does not occur at a high voltage by forming the insulation layer.
    Type: Application
    Filed: December 10, 2007
    Publication date: September 11, 2008
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Seung Bum HONG, Simon Buehlmann
  • Method of manufacturing semiconductor probe having resistive tip
    Patent number: 7419843
    Abstract: A method of manufacturing a semiconductor probe having a resistive tip. The method includes forming first and second mask films having a rectangular shape on a silicon substrate, first etching an upper surface of the silicon substrate, forming a third mask film corresponding to a width of a tip neck by etching the first mask film, forming the width of the tip neck to a predetermined width by second etching of the silicon substrate using the third mask film as a mask, and forming a peak forming portion of the tip by annealing the silicon substrate after removing the third mask film. A semiconductor probe having a uniform height and tips having a uniform neck width can be manufactured.
    Type: Grant
    Filed: August 29, 2005
    Date of Patent: September 2, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chul-min Park, Hong-sik Park, Hyoung-soo Ko, Seung-bum Hong
  • FERROELECTRIC INFORMATION STORAGE MEDIUM AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20080205252
    Abstract: A ferroelectric information storage medium having ferroelectric nanodots and a method of manufacturing the ferroelectric information storage medium are provided. The ferroelectric information storage medium includes a substrate, an electrode formed on the substrate, and ferroelectric nanodots formed on the electrode, wherein the ferroelectric nanodots are separated from each other, and a plurality of the ferroelectric nanodots form a single bit region.
    Type: Application
    Filed: October 15, 2007
    Publication date: August 28, 2008
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Simon Buehlmann, Eun-joo Jang, Shin-ae Jun, Seung-bum Hong, Yong-kwan Kim
  • Semiconductor probe with resistive tip having metal shield thereon
    Patent number: 7411210
    Abstract: A semiconductor probe with a resistive tip and a method of fabricating the semiconductor probe. The resistive tip doped with a first impurity includes a resistive region formed at a peak thereof and lightly doped with a second impurity opposite in polarity to the first impurity, and first and second semiconductor regions formed on sloped sides thereof and heavily doped with the second impurity. The semiconductor probe includes the resistive tip, a cantilever having an end on which the resistive tip is disposed, a dielectric layer disposed on the cantilever and covering the resistive region, and a metal shield disposed on the dielectric layer and having an opening formed at a position corresponding to the resistive region.
    Type: Grant
    Filed: January 3, 2006
    Date of Patent: August 12, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ju-hwan Jung, Hyung-cheol Shin, Hyoung-soo Ko, Seung-bum Hong
  • INFORMATION STORAGE MEDIUM USING NANOCRYSTAL PARTICLES, METHOD OF MANUFACTURING THE INFORMATION STORAGE MEDIUM, AND INFORMATION STORAGE APPARATUS INCLUDING THE INFORMATION STORAGE MEDIUM
    Publication number: 20080186837
    Abstract: Provided is an information storage medium using nanocrystal particles, a method of manufacturing the information storage medium, and an information storage apparatus including the information storage medium. The information storage medium includes a conductive layer, a first insulating layer formed on the conductive layer, a nanocrystal layer that is formed on the first insulating layer and includes conductive nanocrystal particles that can trap charges, and a second insulating layer formed on the nanocrystal layer.
    Type: Application
    Filed: September 12, 2007
    Publication date: August 7, 2008
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Seung-bum Hong, Simon Buehlmann, Shin-ae Jun, Sung-hoon Choa, Eun-joo Jang, Yong-kwan Kim
  • BIT RECORDING PROCESS ON FERROELECTRIC MEDIUM USING PROBE OR SMALL CONDUCTIVE STRUCTURE AND RECORDING MEDIUM THEREOF
    Publication number: 20080180832
    Abstract: A method of recording bits on a ferroelectric medium using a scanning probe or a small conductive structure and a recording medium thereof, in which bit sizes can be decreased to increase data recording density as well as to reduce losses in reproduction signals. The method includes applying switching voltages to a lower electrode of the ferroelectric medium and the probe so as to write bits while approaching the probe to or bringing the probe into contact with a surface of the ferroelectric medium; and applying a base bias voltage, which is equal or smaller in magnitude and opposite in sign to the switching voltages between the switching voltages to make the probe equipotential with an upper portion of the record medium.
    Type: Application
    Filed: September 6, 2007
    Publication date: July 31, 2008
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Seung Bum HONG, Yun Seok Kim, Kwang Soo No, Sung Hoon Choa, Simon Buehlmann, Ji Yoon Kim
  • FERROELECTRIC MEDIA STRUCTURE FOR FERROELECTRIC HARD DISC DRIVE AND METHOD OF FABRICATING THE SAME
    Publication number: 20080180985
    Abstract: A recording medium structure for a ferroelectric hard disc drive (HDD) and a method of fabricating the same are provided. A ferroelectric medium is deposited on a glass substrate so as to form a film with a uniform roughness, thereby improving data recording density and reducing the manufacturing costs of such a media structure. In addition, it is possible to remove a process problem occurring when a silicon substrate is employed. The method of fabricating a media structure comprises steps of (a) forming a nucleation template layer on a glass substrate; (b) forming a conductive layer on the nucleation template layer; (c) forming a ferroelectric layer on the conductive layer; and (d) forming a diamond-like carbon (DLC) layer and a lubricant layer in sequence on the ferroelectric layer.
    Type: Application
    Filed: January 29, 2008
    Publication date: July 31, 2008
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Yong Kwan KIM, Seung Bum Hong, Ju Hwan Jung
  • Method of writing data on a storage device using a probe technique
    Patent number: 7406020
    Abstract: A method of writing data on a storage device using a probe technique. In the method of writing data on a memory device including a resistive probe used for reading and writing of data, a ferroelectric writing medium on which data is written by the resistive probe, and a lower electrode disposed on a bottom surface of the ferroelectric writing medium, heat and an electric field are applied simultaneously to a domain of the ferroelectric writing medium, on which the data will be written, by applying a voltage to the resistive probe and the lower electrode.
    Type: Grant
    Filed: September 7, 2004
    Date of Patent: July 29, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seung-bum Hong, Sung-dong Kim, Ju-hwan Jung, Dong-ki Min, Hong-sik Park, Kyoung-lock Baeck, Chul-min Park, Yun-seok Kim
  • SEMICONDUCTOR PROBE STRUCTURE USING IMPACT-IONIZATION METAL OXIDE SEMICONDUCTOR DEVICE, INFORMATION STORING DEVICE THEREWITH AND MANUFACTURING METHOD THEREOF
    Publication number: 20080169465
    Abstract: A method of manufacturing a probe includes: forming a first slant face of the probe through an anisotropic etching process using a first etching mask pattern formed on a silicon substrate; forming a first semiconductor electrode region; forming a second etching mask pattern in an opposite direction of the first etching mask pattern on the silicon substrate; forming a spacer layer on a side wall of the second etching mask pattern; forming a second slant face of the probe; forming a second semiconductor electrode region; forming a silicon oxide layer pattern on the resulting silicon substrate; forming spacer layers on both side walls of the silicon oxide layer pattern; and etching the silicon substrate to a predetermined depth.
    Type: Application
    Filed: December 17, 2007
    Publication date: July 17, 2008
    Applicants: SAMSUNG ELECTRONICS CO., LTD., SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION
    Inventors: Hyoung Soo KO, Byung Gook PARK, Seung Bum HONG, Chul Min PARK, Woo Young CHOI, Jong Pil KIM, Jae Young SONG, Sang Wan KIM