Abstract: Semiconductor packages having an electromagnetic interference (EMI) shielding layer and methods for forming the same are disclosed. The method includes providing a base carrier defined with an active region and a non-active region. A fan-out redistribution structure is formed over the base carrier. A die having elongated die contacts are provided. The die contacts corresponding to conductive pillars. The die contacts are in electrical communication with the fan-out redistribution structure. An encapsulant having a first major surface and a second major surface opposite to the first major surface is formed. The encapsulant surrounds the die contacts and sidewalls of the die. An electromagnetic interference (EMI) shielding layer is formed to line the first major surface and sides of the encapsulant. An etch process is performed after forming the EMI shielding layer to completely remove the base carrier and singulate the semiconductor package.

Abstract: Semiconductor packages having an electromagnetic interference (EMI) shielding layer and methods for forming the same are disclosed. The method includes providing a base carrier defined with an active region and a non-active region. A fan-out redistribution structure is formed over the base carrier. A die having elongated die contacts are provided. The die contacts corresponding to conductive pillars. The die contacts are in electrical communication with the fan-out redistribution structure. An encapsulant having a first major surface and a second major surface opposite to the first major surface is formed. The encapsulant surrounds the die contacts and sidewalls of the die. An electromagnetic interference (EMI) shielding layer is formed to line the first major surface and sides of the encapsulant. An etch process is performed after forming the EMI shielding layer to completely remove the base carrier and singulate the semiconductor package.