Abstract: An image sensing device may include a substrate, a first gate, a photoelectric converter, a first semiconductor pattern including a floating diffusion, a second semiconductor pattern and a second gate. The substrate includes a light-receiving region and at least one active region. The first gate is arranged over the light-receiving region. The photoelectric converter is formed in the light-receiving region such that a first end of the first gate is disposed over the photoelectric converter. The first semiconductor pattern is formed over the substrate at a second end of the first gate. The first semiconductor pattern has a first height. The second semiconductor pattern is formed over the active region of the substrate. The second semiconductor pattern has a second height. The second gate is formed over the active region of the substrate to cover the second semiconductor pattern.

Abstract: Image sensing devices are disclosed. An image sensing device includes a first pixel group including a plurality of first image sensing pixels to convert light into electrical charges and a first conversion gain transistor coupled to the plurality of first image sensing pixels, a second pixel group including a plurality of second image sensing pixels to convert light into electrical charges and a second conversion gain transistor coupled to the plurality of second image sensing pixels, the second pixel group disposed adjacent to the first pixel group, and a conversion gain capacitor to electrically couple the first conversion gain transistor to the second conversion gain transistor to provide a capacitance to the first and second image sensing pixels. The conversion gain capacitor comprises a first conductive line to include a region having a ring type shape and a second conductive line disposed adjacent to the first conductive line.

Abstract: Image sensing devices are disclosed. An image sensing device includes a first pixel group including a plurality of first image sensing pixels to convert light into electrical charges and a first conversion gain transistor coupled to the plurality of first image sensing pixels, a second pixel group including a plurality of second image sensing pixels to convert light into electrical charges and a second conversion gain transistor coupled to the plurality of second image sensing pixels, the second pixel group disposed adjacent to the first pixel group, and a conversion gain capacitor to electrically couple the first conversion gain transistor to the second conversion gain transistor to provide a capacitance to the first and second image sensing pixels. The conversion gain capacitor comprises a first conductive line to include a region having a ring type shape and a second conductive line disposed adjacent to the first conductive line.

Abstract: An image sensing device is provided to include a plurality of unit pixel regions arranged in a first direction and a second direction, a first device isolation region structured to isolate the plurality of unit pixel regions from each other, a plurality of photoelectric conversion regions in the substrate to form a plurality of imaging pixels structured to generate photocharges, a plurality of second device isolation regions configured to define active regions of the plurality of imaging pixels, a plurality of floating diffusion regions formed in a first active region to store the photocharges, and a plurality of transfer gates structured to transmit the photocharges. The floating diffusion region is located contiguous to the transfer gate in the first direction and the second direction and is structured to surround a plurality of side surfaces of a corresponding transfer gate.

Abstract: An image sensing device is provided to include a substrate configured to provide pixel regions that are separated from one another by a first isolation structure, a photoelectric conversion element disposed in each of the pixel regions and in a lower region of the substrate, a floating diffusion (FD) region and a first transistor that are disposed in each of the pixel regions and in a first active region positioned in an upper region of the substrate, and a second transistor disposed in each of the pixel regions and in a second active region that is positioned in the upper region of the substrate and separated from the first active region by a second isolation structure. The second isolation structure is disposed to contact a top surface of the substrate and includes an impurity region within a predetermined depth from the top surface of the substrate.

Abstract: An image sensor may include a pixel array where a plurality of unit pixels are arranged in a two dimensional matrix, wherein each of the unit pixels includes: a substrate including a photoelectric conversion element; one or more depletion inducing layers formed in the photoelectric conversion element; an inter-layer dielectric layer formed over the substrate; and one or more floating electrodes formed in the inter-layer dielectric layer to overlap each of the depletion inducing layers.

Abstract: An image sensor may include a pixel array where a plurality of unit pixels are arranged in a two dimensional matrix, wherein each of the unit pixels includes: a substrate including a photoelectric conversion element; one or more depletion inducing layers formed in the photoelectric conversion element; an inter-layer dielectric layer formed over the substrate; and one or more floating electrodes formed in the inter-layer dielectric layer to overlap each of the depletion inducing layers.

Abstract: An image sensor cell is divided into two chips, and a capacitor for noise reduction is formed in a bottom wafer in correspondence with a unit pixel of a top wafer in a stack chip package image sensor having a coupling structure of the two chips, so that noise characteristics of the image sensor are improved. A stack chip package image sensor includes: a first semiconductor chip that includes a photodiode, a transmission transistor, and a first conductive pad and outputs image charge, which is output from the photodiode, through the first conductive pad; and a second semiconductor chip that includes a drive transistor, a selection transistor, a reset transistor, and a second conductive pad and supplies a corresponding pixel with an output voltage corresponding to the image charge received from the first semiconductor chip through the second conductive pad. The second semiconductor chip includes a capacitor for noise reduction.

Abstract: A pixel circuit for a global shutter of a substrate-stacked image sensor may include a semiconductor chip including: a photodiode configured to output electric charges generated through a light sensing operation; and a reset node configured to receive a reset voltage from a reset voltage node and reset the photodiode. The semiconductor chip may have a structure in which the semiconductor chip is stacked over another semiconductor chip.

Abstract: Provided are a pixel, a pixel array, and an image sensor including the pixel array. The pixel includes a photoelectric converter, a capacitor, a variable capacitor, and a switching element. The capacitor accumulates electric charges converted by the photoelectric converter. The variable capacitor is connected to the capacitor, and has capacitance varied according to a potential of the capacitor. The switching element outputs the potential of the capacitor.

Abstract: A pixel circuit for a global shutter of a substrate-stacked image sensor may include a semiconductor chip including: a photodiode configured to output electric charges generated through a light sensing operation; and a reset node configured to receive a reset voltage from a reset voltage node and reset the photodiode. The semiconductor chip may have a structure in which the semiconductor chip is stacked over another semiconductor chip.

Abstract: An image sensor cell is divided into two chips, and a capacitor for noise reduction is formed in a bottom wafer in correspondence with a unit pixel of a top wafer in a stack chip package image sensor having a coupling structure of the two chips, so that noise characteristics of the image sensor are improved. A stack chip package image sensor includes: a first semiconductor chip that includes a photodiode, a transmission transistor, and a first conductive pad and outputs image charge, which is output from the photodiode, through the first conductive pad; and a second semiconductor chip that includes a drive transistor, a selection transistor, a reset transistor, and a second conductive pad and supplies a corresponding pixel with an output voltage corresponding to the image charge received from the first semiconductor chip through the second conductive pad. The second semiconductor chip includes a capacitor for noise reduction.

Abstract: Disclosed are a pixel, a pixel array, a method for manufacturing the pixel array, and an image sensor including the pixel array. The pixel includes a first color filter layer to transmit a visible light and an IR, and a second color filter layer to transmit a light, in which the visible light is blocked, at one side of the first color filter layer.

Abstract: Disclosed are a pixel, a pixel array, an image sensor including the same, and a method for operating the image sensor. Charges are eliminated from a first photoelectric conversion region of a photoelectric conversion section, and accumulated into the first photoelectric conversion region. Information about quantity of the charges of the first photoelectric conversion region is output, and charges are removed from a second photoelectric conversion region of the photoelectric conversion section. Accumulation of charges into the second photoelectric conversion region is started, and then information about quantity of the charges accumulated in the second photoelectric conversion region is output. Lights having wavelength bands different from each other are independently detected according to disclosed invention.

Abstract: Disclosed are a pixel, a pixel array, an image sensor including the pixel array and a method for operating the image sensor. The pixel includes a photo-electro conversion unit; a capacitor for storing charges converted by the photo-electro conversion unit; an output switching device for outputting an electric potential of the capacitor; and a removal unit for removing a part of the charges converted by the photo-electro conversion unit.

Abstract: Disclosed are a pixel, a pixel array, an image sensor including the pixel array and a method for operating the image sensor. The pixel includes a photo-electro conversion unit; a first capacitor for storing a first quantity of charges of the photo-electro conversion unit; a second capacitor for storing a second quantity of charges of the photo-electro conversion unit; and an output unit to output the first and second quantities of the charges.

Abstract: Disclosed are a pixel, a pixel array, an image sensor and a method for operating the image sensor. The pixel includes a photo-electro conversion unit; a first charge storage unit for storing charges converted by the photo-electro conversion unit; a first switching unit for transferring the charges from the photo-electro conversion unit to the first charge storage unit; a second charge storage unit for storing the charges converted by the photo-electro conversion unit; a second switching unit for transferring the charges from the photo-electro conversion unit to the second charge storage unit; a third switching unit for connecting the second charge storage unit with the first charge storage unit; and an output unit for outputting information about quantity of the charges stored in the first and second charge storage units. The light having the high intensity of illumination or the low intensity of illumination is sensed in the wide range.

Abstract: Disclosed are a pixel, a pixel array, an image sensor including the same, and a method for driving the image sensor. The method for driving the image sensor includes starting an integration procedure of charges in a photoelectric conversion part, transferring the charges, which are integrated in the photoelectric conversion part for a first integration duration, into a charge storage part, reading a signal level of the first integration duration, transferring charges, which are integrated in the photoelectric conversion part for a second integration duration after the first integration duration, into the charge storage part, reading a signal level of the second integration duration, and calculating a light intensity by using the signal level of the first integration duration and the signal level of the second integration duration. A WDR image sensor is provided to detect all light intensities regardless of the degree of illuminance.

Abstract: Disclosed are a pixel, a pixel array, and an image sensor including the pixel array. The pixel includes a first photo-sensing unit to detect a visible light and an IR, and a second photo-sensing unit provided at one side of the first photo-sensing unit to detect a light in which the IR is blocked.

Abstract: Disclosed are a pixel, a pixel array, an image sensor including the same, and a method for operating the image sensor. Charges are eliminated from a first photoelectric conversion region of a photoelectric conversion section, and accumulated into the first photoelectric conversion region. Information about quantity of the charges of the first photoelectric conversion region is output, and charges are removed from a second photoelectric conversion region of the photoelectric conversion section. Accumulation of charges into the second photoelectric conversion region is started, and then information about quantity of the charges accumulated in the second photoelectric conversion region is output. Lights having wavelength bands different from each other are independently detected according to disclosed invention.