Abstract: A capacitor includes: a plurality of bottom electrodes; a dielectric layer formed over the bottom electrodes; and a top electrode formed over the dielectric layer, wherein the top electrode includes a carbon-containing material and a germanium-containing material that fill a gap between the bottom electrodes.

Abstract: A capacitor includes a plurality of lower bottom electrodes, a lower supporter supporting the lower bottom electrodes and including a plurality of lower supporter openings, upper bottom electrodes formed on the lower bottom electrodes, respectively, and an upper supporter supporting the upper bottom electrodes and including a plurality of upper supporter openings, wherein the lower supporter openings and the upper supporter openings do not vertically overlap each other.

Abstract: A method for fabricating a semiconductor device includes forming an upper structure in which a bottom electrode, a dielectric layer, a top electrode and a plasma protection layer are sequentially stacked on a lower structure, exposing the upper structure to a plasma treatment, and exposing the plasma-treated upper structure and the lower structure to a hydrogen passivation process.

Abstract: A method for fabricating a semiconductor device includes forming an upper structure in which a bottom electrode, a dielectric layer, a top electrode and a plasma protection layer are sequentially stacked on a lower structure, exposing the upper structure to a plasma treatment, and exposing the plasma-treated upper structure and the lower structure to a hydrogen passivation process.

Abstract: A method for fabricating a semiconductor device includes forming an upper structure in which a bottom electrode, a dielectric layer, a top electrode and a plasma protection layer are sequentially stacked on a lower structure, exposing the upper structure to a plasma treatment, and exposing the plasma-treated upper structure and the lower structure to a hydrogen passivation process.

Abstract: A method for fabricating a semiconductor device includes: forming a lower array including a plurality of bottom electrodes over a semiconductor substrate, a supporter supporting the bottom electrodes, and a dielectric layer that is formed over the bottom electrodes and the supporter; forming a gap-fill layer covering side portions of the lower array and an upper portion of the lower array; forming a capping portion covering the upper portion of the lower array over the gap-fill layer; performing a pull-back process of the gap-fill layer to form a gap-fill electrode aligned with the capping portion; and forming a low-resistivity electrode over the gap-fill electrode.

Abstract: A capacitor includes: a plurality of bottom electrodes; a dielectric layer formed over the bottom electrodes; and a top electrode formed over the dielectric layer, wherein the top electrode includes a carbon-containing material and a germanium-containing material that fill a gap between the bottom electrodes.

Abstract: A method for fabricating a semiconductor device includes: forming a lower array including a plurality of bottom electrodes over a semiconductor substrate, a supporter supporting the bottom electrodes, and a dielectric layer that is formed over the bottom electrodes and the supporter; forming a gap-fill layer covering side portions of the lower array and an upper portion of the lower array; forming a capping portion covering the upper portion of the lower array over the gap-fill layer; performing a pull-back process of the gap-fill layer to form a gap-fill electrode aligned with the capping portion; and forming a low-resistivity electrode over the gap-fill electrode.

Abstract: A capacitor includes: a plurality of bottom electrodes; a dielectric layer formed over the bottom electrodes; and a top electrode formed over the dielectric layer, wherein the top electrode includes a carbon-containing material and a germanium-containing material that fill a gap between the bottom electrodes.

Abstract: A method for fabricating a semiconductor device includes: forming a lower array including a plurality of bottom electrodes over a semiconductor substrate, a supporter supporting the bottom electrodes, and a dielectric layer that is formed over the bottom electrodes and the supporter; forming a gap-fill layer covering side portions of the lower array and an upper portion of the lower array; forming a capping portion covering the upper portion of the lower array over the gap-fill layer; performing a pull-back process of the gap-fill layer to form a gap-fill electrode aligned with the capping portion; and forming a low-resistivity electrode over the gap-fill electrode.

Abstract: A capacitor includes a plurality of lower bottom electrodes, a lower supporter supporting the lower bottom electrodes and including a plurality of lower supporter openings, upper bottom electrodes formed on the lower bottom electrodes, respectively, and an upper supporter supporting the upper bottom electrodes and including a plurality of upper supporter openings, wherein the lower supporter openings and the upper supporter openings do not vertically overlap each other.

Abstract: A capacitor includes a plurality of lower bottom electrodes, a lower supporter supporting the lower bottom electrodes and including a plurality of lower supporter openings, upper bottom electrodes formed on the lower bottom electrodes, respectively, and an upper supporter supporting the upper bottom electrodes and including a plurality of upper supporter openings, wherein the lower supporter openings and the upper supporter openings do not vertically overlap each other.

Abstract: A capacitor includes: a plurality of bottom electrodes; a dielectric layer formed over the bottom electrodes; and a top electrode formed over the dielectric layer, wherein the top electrode includes a carbon-containing material and a germanium-containing material that fill a gap between the bottom electrodes.

Abstract: A capacitor includes a plurality of lower bottom electrodes, a lower supporter supporting the lower bottom electrodes and including a plurality of lower supporter openings, upper bottom electrodes formed on the lower bottom electrodes, respectively, and an upper supporter supporting the upper bottom electrodes and including a plurality of upper supporter openings, wherein the lower supporter openings and the upper supporter openings do not vertically overlap each other.

Abstract: A method for fabricating a semiconductor device includes forming an upper structure in which a bottom electrode, a dielectric layer, a top electrode and a plasma protection layer are sequentially stacked on a lower structure, exposing the upper structure to a plasma treatment, and exposing the plasma-treated upper structure and the lower structure to a hydrogen passivation process.