Patents by Inventor Seung Nam Son
Seung Nam Son has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11990411Abstract: In one example, a semiconductor device comprises a redistribution layer (RDL) substrate having a top surface and a bottom surface, wherein the RDL substrate comprises a filler-free dielectric material, an electronic device on the top surface of the RDL substrate, an electrical interconnect on the bottom surface of the RDL substrate and electrically coupled to the electronic device, a first protective material contacting a side surface of the electronic device and the top surface of the RDL substrate, and a second protective material contacting a side surface of the electrical interconnect and the bottom surface of the RDL substrate. Other examples and related methods are also disclosed herein.Type: GrantFiled: April 13, 2022Date of Patent: May 21, 2024Assignee: Amkor Technology Singapore Holding Pte. Ltd.Inventors: Tae Ki Kim, Jae Beom Shim, Seung Nam Son, Won Chul Do
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Patent number: 11948808Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.Type: GrantFiled: December 6, 2021Date of Patent: April 2, 2024Assignee: AMKOR TECHNOLOGY SINGAPORE HOLDING PTE. LTD.Inventors: Dong Jin Kim, Jin Han Kim, Won Chul Do, Jae Hun Bae, Won Myoung Ki, Dong Hoon Han, Do Hyung Kim, Ji Hun Lee, Jun Hwan Park, Seung Nam Son, Hyun Cho, Curtis Zwenger
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Patent number: 11908761Abstract: In one example, an electronic device comprises a base substrate comprising a base substrate conductive structure, a first electronic component over a first side of the base substrate, an encapsulant over the first side of the base substrate, wherein the encapsulant contacts a lateral side of the electronic component, an interposer substrate over a first side of the encapsulant and comprising an interposer substrate conductive structure, and a vertical interconnect in the encapsulant and coupled with the base substrate conductive structure and the interposer substrate conductive structure. A first one of the base substrate or the interposer substrate comprises a redistribution layer (RDL) substrate, and a second one of the base substrate or the interposer substrate comprises a laminate substrate. Other examples and related methods are also disclosed herein.Type: GrantFiled: January 20, 2023Date of Patent: February 20, 2024Assignee: Amkor Technology Singapore Holding Pte. Ltd.Inventors: Seung Nam Son, Dong Hyun Khim, Jin Kun Yoo
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Publication number: 20230230890Abstract: In one example, an electronic device comprises a base substrate comprising a base substrate conductive structure, a first electronic component over a first side of the base substrate, an encapsulant over the first side of the base substrate, wherein the encapsulant contacts a lateral side of the electronic component, an interposer substrate over a first side of the encapsulant and comprising an interposer substrate conductive structure, and a vertical interconnect in the encapsulant and coupled with the base substrate conductive structure and the interposer substrate conductive structure. A first one of the base substrate or the interposer substrate comprises a redistribution layer (RDL) substrate, and a second one of the base substrate or the interposer substrate comprises a laminate substrate. Other examples and related methods are also disclosed herein.Type: ApplicationFiled: January 20, 2023Publication date: July 20, 2023Applicant: Amkor Technology Singapore Holding Pte. Ltd.Inventors: Seung Nam Son, Dong Hyun Khim, Jin Kun Yoo
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Patent number: 11562936Abstract: In one example, an electronic device comprises a base substrate comprising a base substrate conductive structure, a first electronic component over a first side of the base substrate, an encapsulant over the first side of the base substrate, wherein the encapsulant contacts a lateral side of the electronic component, an interposer substrate over a first side of the encapsulant and comprising an interposer substrate conductive structure, and a vertical interconnect in the encapsulant and coupled with the base substrate conductive structure and the interposer substrate conductive structure. A first one of the base substrate or the interposer substrate comprises a redistribution layer (RDL) substrate, and a second one of the base substrate or the interposer substrate comprises a laminate substrate. Other examples and related methods are also disclosed herein.Type: GrantFiled: August 31, 2020Date of Patent: January 24, 2023Assignee: Amkor Technology Singapore Holding Pte. Ltd.Inventors: Seung Nam Son, Dong Hyun Khim, Jin Kun Yoo
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Publication number: 20220238441Abstract: In one example, a semiconductor device comprises a redistribution layer (RDL) substrate having a top surface and a bottom surface, wherein the RDL substrate comprises a filler-free dielectric material, an electronic device on the top surface of the RDL substrate, an electrical interconnect on the bottom surface of the RDL substrate and electrically coupled to the electronic device, a first protective material contacting a side surface of the electronic device and the top surface of the RDL substrate, and a second protective material contacting a side surface of the electrical interconnect and the bottom surface of the RDL substrate. Other examples and related methods are also disclosed herein.Type: ApplicationFiled: April 13, 2022Publication date: July 28, 2022Applicant: Amkor Technology Singapore Holding Pte. Ltd.Inventors: Tae Ki Kim, Jae Beom Shim, Seung Nam Son, Won Chul Do
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Publication number: 20220165582Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.Type: ApplicationFiled: December 6, 2021Publication date: May 26, 2022Inventors: Dong Jin Kim, Jin Han Kim, Won Chul Do, Jae Hun Bae, Won Myoung Ki, Dong Hoon Han, Do Hyung Kim, Ji Hun Lee, Jun Hwan Park, Seung Nam Son, Hyun Cho, Curtis Zwenger
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Publication number: 20220068739Abstract: In one example, an electronic device comprises a base substrate comprising a base substrate conductive structure, a first electronic component over a first side of the base substrate, an encapsulant over the first side of the base substrate, wherein the encapsulant contacts a lateral side of the electronic component, an interposer substrate over a first side of the encapsulant and comprising an interposer substrate conductive structure, and a vertical interconnect in the encapsulant and coupled with the base substrate conductive structure and the interposer substrate conductive structure. A first one of the base substrate or the interposer substrate comprises a redistribution layer (RDL) substrate, and a second one of the base substrate or the interposer substrate comprises a laminate substrate. Other examples and related methods are also disclosed herein.Type: ApplicationFiled: August 31, 2020Publication date: March 3, 2022Applicant: Amkor Technology Singapore Holding Pte. Ltd.Inventors: Seung Nam Son, Dong Hyun Khim, Jin Kun Yoo
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Patent number: 11195726Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.Type: GrantFiled: February 4, 2020Date of Patent: December 7, 2021Assignee: Amkor Technology Singapore Holding Pte. Ltd.Inventors: Dong Jin Kim, Jin Han Kim, Won Chul Do, Jae Hun Bae, Won Myoung Ki, Dong Hoon Han, Do Hyung Kim, Ji Hun Lee, Jun Hwan Park, Seung Nam Son, Hyun Cho, Curtis Zwenger
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Publication number: 20200335441Abstract: In one example, a semiconductor device comprises a redistribution layer (RDL) substrate having a top surface and a bottom surface, wherein the RDL substrate comprises a filler-free dielectric material, an electronic device on the top surface of the RDL substrate, an electrical interconnect on the bottom surface of the RDL substrate and electrically coupled to the electronic device, a first protective material contacting a side surface of the electronic device and the top surface of the RDL substrate, and a second protective material contacting a side surface of the electrical interconnect and the bottom surface of the RDL substrate. Other examples and related methods are also disclosed herein.Type: ApplicationFiled: April 18, 2019Publication date: October 22, 2020Applicant: Amkor Technology Singapore Holding Pte. Ltd.Inventors: Tae Ki Kim, Jae Beom Shim, Seung Nam Son, Won Chul Do
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Publication number: 20200321222Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.Type: ApplicationFiled: February 4, 2020Publication date: October 8, 2020Inventors: Dong Jin Kim, Jin Han Kim, Won Chul Do, Jae Hun Bae, Won Myoung Ki, Dong Hoon Han, Do Hyung Kim, Ji Hun Lee, Jun Hwan Park, Seung Nam Son, Hyun Cho, Curtis Zwenger
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Patent number: 10553451Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.Type: GrantFiled: June 25, 2018Date of Patent: February 4, 2020Assignee: Amkor Technology, Inc.Inventors: Dong Jin Kim, Jin Han Kim, Won Chul Do, Jae Hun Bae, Won Myoung Ki, Dong Hoon Han, Do Hyung Kim, Ji Hun Lee, Jun Hwan Park, Seung Nam Son, Hyun Cho, Curtis Zwenger
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Publication number: 20180308712Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.Type: ApplicationFiled: June 25, 2018Publication date: October 25, 2018Inventors: Dong Jin Kim, Jin Han Kim, Won Chul Do Do, Jae Hun Bae Bae, Won Myoung Ki, Dong Hoon Han, Do Hyung Kim, Ji Hun Lee, Jun Hwan Park, Seung Nam Son, Hyun Cho, Curtis Zwenger
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Patent number: 10008393Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.Type: GrantFiled: February 11, 2016Date of Patent: June 26, 2018Assignee: AMKOR TECHNOLOGY, INC.Inventors: Dong Jin Kim, Jin Han Kim, Won Chul Do Do, Jae Hun Bae Bae, Won Myoung Ki, Dong Hoon Han, Do Hyung Kim, Ji Hun Lee, Jun Hwan Park, Seung Nam Son, Hyun Cho, Curtis Zwenger
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Publication number: 20160276174Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.Type: ApplicationFiled: February 11, 2016Publication date: September 22, 2016Inventors: Dong Jin Kim, Jin Han Kim, Won Chul Do Do, Jae Hun Bae Bae, Won Myoung Ki, Dong Hoon Han, Do Hyung Kim, Ji Hun Lee, Jun Hwan Park, Seung Nam Son, Hyun Cho, Curtis Zwenger
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Publication number: 20150255426Abstract: A semiconductor device with reduced warpage is disclosed and may, for example, include bonding at least two semiconductor die to a substrate, forming underfill material between the at least two semiconductor die and the substrate and between the at least two semiconductor die, and removing a portion of the underfill material between the at least two semiconductor die, thereby forming a groove. The at least two semiconductor die and the underfill material may, for example, be encapsulating utilizing an encapsulant. The groove may, for example, be filled using the encapsulant. The underfill material between the at least two semiconductor die may, for example, be removed utilizing laser etching. The underfill material between the at least two semiconductor die may, for example, be removed to a depth of 60-70% of a thickness of the at least two semiconductor die.Type: ApplicationFiled: November 18, 2014Publication date: September 10, 2015Inventors: Seung Nam Son, Pil Je Sung, Won Chul Do, JungBae Lee, Ji Hun Lee
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Publication number: 20090160937Abstract: This development is about the camera control method for a vehicle entrance control system. In detail, it is about the applying variable exposure time and gain level per image frames that are captured through a CCTV camera of vehicle entrance control system. The entire control is done through 4 steps. The first step is to calculate the average value of image brightness and write the multiple parameters of exposure time and gain level that match with the calculated average brightness value in the lookup table to a camera control register. The second step is to compare average brightness value with the threshold of strobe operation and compare acquired exposure time and gain level parameters with the preset maximum limitations. The third step is to turn on strobe if the acquired exposure time and gain level parameters are higher than preset maximum limitation and average brightness value is lower than strobe operation threshold.Type: ApplicationFiled: November 19, 2008Publication date: June 25, 2009Inventor: Seung Nam Son
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Publication number: 20090161913Abstract: This development is about the camera control method for a vehicle license plate recognition system. In detail, it is about the applying variable shutter speed and gain level per image frames that are captured through a CCTV camera of vehicle license plate recognition system. The entire control is done through 3 steps. The first step is to build up a lookup table of electronic shutter speed and gain level to generate images of various brightness levels and archive the created lookup table on to a memory of a camera. The second step is to calculate the average value of image brightness and write the multiple parameters of electronic shutter speed and gain level that match with the calculated average brightness value in the lookup table to a camera control register. The third step is to output series of images of various brightness that are captured under various shutter speeds and gain levels by the control from the camera register.Type: ApplicationFiled: November 19, 2008Publication date: June 25, 2009Inventor: Seung Nam Son