Patents by Inventor Seunghyo KO
Seunghyo KO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240021659Abstract: A display device can include a display panel including a first area and a second area surrounded by the first area, where each of the first area and the second area includes a plurality of subpixels. The display device can further include a plurality of first driving thin film transistors disposed respectively in the plurality of subpixels positioned in the first area, and a plurality of second driving thin film transistors disposed respectively in the plurality of subpixels positioned in the second area. The second area can include a transparent area. For at least one of the plurality of the second driving thin film transistors, a length of the channel region of the second driving thin film transistor can be shorter than a length of the channel region of the first driving thin film transistor.Type: ApplicationFiled: February 24, 2023Publication date: January 18, 2024Applicant: LG DISPLAY CO., LTD.Inventors: SunWook KO, Hyunjin KIM, KumMi OH, Seunghyo KO
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Patent number: 11616095Abstract: Embodiments of the disclosure are related to a display device, in a structure where an optical sensor is disposed on an opposite side of a side displaying an image and overlapping an active area of a display panel, as increasing a transmittance by implementing an area overlapping to the optical sensor as a low resolution area, a sensing function by the optical sensor located in the active area could be implemented. Furthermore, by implementing a number of a gate electrode or a width of a channel region or the like of a driving transistor disposed in the low resolution area to be different from those of a driving transistor disposed in a high resolution area, compensating a luminance of the low resolution area and preventing a deviation of a luminance between the low resolution area and the high resolution area can be achieved.Type: GrantFiled: December 11, 2020Date of Patent: March 28, 2023Assignee: LG DISPLAY CO., LTD.Inventors: SunWook Ko, Hyunjin Kim, KumMi Oh, Seunghyo Ko
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Publication number: 20230081823Abstract: A thin film transistor substrate can include a thin film transistor on a base substrate, and a capacitor connected to the thin film transistor. The thin film transistor can include an active layer on the base substrate, and a gate electrode spaced apart from the active layer to at least partially overlap the active layer. The capacitor can include a first capacitor electrode disposed on a same layer as the active layer of the thin film transistor, and a second capacitor electrode disposed on a same layer as the gate electrode and overlapping with the first capacitor electrode. The first capacitor electrode can include an active material layer made of a same material as the active layer of the thin film transistor, and a metal-containing layer disposed on the active material layer. The metal-containing layer can include a metal different than the active material layer and can absorb hydrogen.Type: ApplicationFiled: September 2, 2022Publication date: March 16, 2023Applicant: LG Display Co., Ltd.Inventors: SoYoung NOH, Seunghyo KO, KyeongJu MOON
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Publication number: 20230079262Abstract: A thin film transistor, a fabricating method of the thin film transistor and a display device comprising the thin film transistor are provided, in which the thin film transistor includes an active layer on a substrate, and a gate electrode spaced apart from the active layer and at least partially overlapped with the active layer, wherein the active layer includes fluorine (F) and has a first surface in a direction opposite to the substrate, the active layer has a concentration gradient of fluorine (F) in which a concentration gradient of fluorine (F) along a direction parallel with the first surface is smaller than that of fluorine (F) along a direction perpendicular to the first surface.Type: ApplicationFiled: September 9, 2022Publication date: March 16, 2023Applicant: LG DISPLAY CO., LTD.Inventors: SoYoung NOH, Seunghyo KO
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Publication number: 20230071215Abstract: Disclosed is a thin film transistor, a fabrication method thereof, and a display apparatus comprising the same, wherein the thin film transistor comprises a light shielding layer, an active layer on the light shielding layer, a gate electrode spaced apart from the active layer and overlapped with at least a portion of the active layer, and an inorganic insulating layer between the active layer and the light shielding layer, wherein the active layer includes a carrier acceptor.Type: ApplicationFiled: August 26, 2022Publication date: March 9, 2023Inventor: Seunghyo Ko
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Publication number: 20230070485Abstract: A thin film transistor includes an active layer of an oxide semiconductor, a gate electrode provided on or under the active layer while being spaced apart from the active layer and overlapping with at least a portion of the active layer, and a gate insulating film between the active layer and the gate electrode, wherein the active layer includes copper (Cu).Type: ApplicationFiled: August 29, 2022Publication date: March 9, 2023Applicant: LG DISPLAY CO., LTD.Inventors: KyeongJu MOON, Seunghyo KO, Nuri ON
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Publication number: 20230045741Abstract: According to the present specification, provided is a micro LED display device. The micro LED display device includes a substrate, a supply voltage line on the substrate, and a micro LED area disposed on the supply voltage line. At least one portion of the supply voltage line is disposed at the vertical lower part of the micro LED area.Type: ApplicationFiled: September 15, 2020Publication date: February 9, 2023Inventors: Kummi OH, Seunghyo KO, Hyunjin KIM, Sunwook Ko
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Publication number: 20230033999Abstract: A thin film transistor for a display device includes an active layer, and a gate electrode spaced apart from the active layer and at least partially overlapping with the active layer, wherein the active layer includes copper, and has a concentration gradient of copper along a thickness direction of the active layer.Type: ApplicationFiled: July 21, 2022Publication date: February 2, 2023Applicant: LG DISPLAY CO., LTD.Inventors: Seunghyo KO, Nuri ON, TaeWoong MOON
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Publication number: 20220262854Abstract: A light emitting diode display apparatus includes a display substrate having a plurality of subpixel areas; and a light emitting diode disposed on the display substrate to correspond to a corresponding subpixel area of the plurality of subpixel areas, wherein the light emitting diode includes an emission area and a non-emission area adjacent to the emission area, wherein the light emitting diode includes a trench part provided to overlap a boundary between the emission area and the non-emission area, and wherein the trench part is configured such that a side light emitted from the emission area is reflected in a display direction of the light emitting diode display apparatus.Type: ApplicationFiled: May 4, 2022Publication date: August 18, 2022Inventors: MoonHo PARK, Seunghyo KO
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Patent number: 11348967Abstract: A light emitting diode display apparatus includes a display substrate having a plurality of subpixel areas; and a light emitting diode disposed on the display substrate to correspond to a corresponding subpixel area of the plurality of subpixel areas, wherein the light emitting diode includes an emission area and a non-emission area adjacent to the emission area, wherein the light emitting diode includes a trench part provided to overlap a boundary between the emission area and the non-emission area, and wherein the trench part is configured such that a side light emitted from the emission area is reflected in a display direction of the light emitting diode display apparatus.Type: GrantFiled: December 31, 2019Date of Patent: May 31, 2022Assignee: LG Display Co., Ltd.Inventors: MoonHo Park, Seunghyo Ko
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Publication number: 20210193732Abstract: Embodiments of the disclosure are related to a display device, in a structure where an optical sensor is disposed on an opposite side of a side displaying an image and overlapping an active area of a display panel, as increasing a transmittance by implementing an area overlapping to the optical sensor as a low resolution area, a sensing function by the optical sensor located in the active area could be implemented. Furthermore, by implementing a number of a gate electrode or a width of a channel region or the like of a driving transistor disposed in the low resolution area to be different from those of a driving transistor disposed in a high resolution area, compensating a luminance of the low resolution area and preventing a deviation of a luminance between the low resolution area and the high resolution area can be achieved.Type: ApplicationFiled: December 11, 2020Publication date: June 24, 2021Applicant: LG DISPLAY CO., LTD.Inventors: SunWook KO, Hyunjin KIM, KumMi OH, Seunghyo KO
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Patent number: 10903246Abstract: Provided are a thin film transistor substrate and a display using the same. A display includes: a first area, a second area, a first thin film transistor disposed at the first area, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at the second area, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer on an area of the display device, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed over the first gate electrode and the second gate electrode.Type: GrantFiled: February 24, 2015Date of Patent: January 26, 2021Assignee: LG Display Co., Ltd.Inventors: Youngjang Lee, Kyungmo Son, Seongpil Cho, Jaehoon Park, Sohyung Lee, Sangsoon Noh, Moonho Park, Sungjin Lee, Seunghyo Ko, Mijin Jeong
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Publication number: 20200212102Abstract: A light emitting diode display apparatus includes a display substrate having a plurality of subpixel areas; and a light emitting diode disposed on the display substrate to correspond to a corresponding subpixel area of the plurality of subpixel areas, wherein the light emitting diode includes an emission area and a non-emission area adjacent to the emission area, wherein the light emitting diode includes a trench part provided to overlap a boundary between the emission area and the non-emission area, and wherein the trench part is configured such that a side light emitted from the emission area is reflected in a display direction of the light emitting diode display apparatus.Type: ApplicationFiled: December 31, 2019Publication date: July 2, 2020Inventors: MoonHo Park, Seunghyo Ko
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Patent number: 10186528Abstract: Provided are a thin film transistor substrate and a display using the same. A thin film transistor substrate includes: a substrate, a first thin film transistor disposed at a first area of the substrate, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at a second area of the substrate, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer disposed on an area of the substrate, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed: over the first gate electrode and the second gate electrode, and under the oxide semiconductor layer.Type: GrantFiled: February 23, 2015Date of Patent: January 22, 2019Assignee: LG Display Co., Ltd.Inventors: Youngjang Lee, Kyungmo Son, Seongpil Cho, Jaehoon Park, Sohyung Lee, Sangsoon Noh, Moonho Park, Sungjin Lee, Seunghyo Ko, Mijin Jeong
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Publication number: 20150243688Abstract: Provided are a thin film transistor substrate and a display using the same. A display includes: a first area, a second area, a first thin film transistor disposed at the first area, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at the second area, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer on an area of the display device, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed over the first gate electrode and the second gate electrode.Type: ApplicationFiled: February 24, 2015Publication date: August 27, 2015Applicant: LG DISPLAY CO., LTD.Inventors: Youngjang LEE, Kyungmo SON, Seongpil CHO, Jaehoon PARK, Sohyung LEE, Sangsoon NOH, Moonho PARK, Sungjin LEE, Seunghyo KO, Mijin JEONG
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Publication number: 20150243685Abstract: Provided are a thin film transistor substrate and a display using the same. A thin film transistor substrate includes: a substrate, a first thin film transistor disposed at a first area of the substrate, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at a second area of the substrate, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer disposed on an area of the substrate, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed: over the first gate electrode and the second gate electrode, and under the oxide semiconductor layer.Type: ApplicationFiled: February 23, 2015Publication date: August 27, 2015Applicant: LG Display Co., Ltd.Inventors: Youngjang LEE, Kyungmo SON, Seongpil CHO, Jaehoon PARK, Sohyung LEE, Sangsoon NOH, Moonho PARK, Sungjin LEE, Seunghyo KO, Mijin JEONG